DDQ17 Search Results
DDQ17 Datasheets Context Search
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EIGHT MOSFET ARRAY DIP-18
Abstract: AN0116NA AN0116NB AN0116ND AN0116WG AN0120NA AN0120NB AN0130NA AN0130NB SOW-20
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18-leadsow-20an0116nban0116na+8 | |
8 Channel Power Mosfet Array
Abstract: DDQ17S EIGHT MOSFET ARRAY AN0140ND
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ddq17s18-leadan0116nban0120nb+8 | |
a/S3C9004/P9004/C9014/Reset Software for Alchemy Au1000 ProcessorContextual Info: RMI Alchemy Au1210™ Navigation Processor and Au1250™ Media Processor Data Book April 2007 Revision A - Preliminary RMI Alchemy™ Au1210™ Navigation Processor and Au1250™ Media Processor Data Book - Preliminary 2007 Raza Microelectronics, Inc. All rights reserved. |
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au1210au1250a/s3c9004/p9004/c9014/reset software for alchemy au1000 processor | |
km418c256
Abstract: M418C KM418C256A
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km418c256a/al/allkm418c256a/auall-6km418c256a/auall-7km418c256a/al/a+7 | |
KM418C256BContextual Info: KM418C256B/BL/BLL CMOS DRAM 256K x18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM418C256B/BLVBLL is a CMOS high spe ed 262,14 4 b it x 18 D ynam ic R andom A cce ss Memory. Its design is optimized for high performance |
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km418c256b/bl/bllkm418c256b/blvbll256b/bl/bll40-lead+1 | |
14010B
Abstract: AU1250
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au1210au125032-bit14010b | |
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Contextual Info: HYUNDAI SEMICONDUCTOR HYM581000C Series 1M X 8 -b it CMOS DRAM MODULE DESCRIPTION The HYM581000C is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor is mounted for each DRAM. |
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hym581000chy531000a22/ifhym581000cm/clm+3 | |
CI 8880
Abstract: 8880 dtmf dtmf 8870 DTMF mobile DTMF Tone Decoder m-8870 dtmf 20-PIN DDQ1715 M-8870 M-8880
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m-8880m-8870mmd615024ki1+13 | |
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Contextual Info: SEIKO INSTRUMENTS U S A blE » • 0123443 DDD1723 LTR « S E I J S-8440AF Power Management IC The S-8440AF is a power m anagem ent 1C fo r portable telephones. It contains a m om entary pow er fail warning circuit and a w atchdog tim er circuit, in addition to seriestype voltage regulators and voltage detectors. |
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ddd1723s-8440afa1e3m43d0d1747 | |
AK532256AWPContextual Info: AK532256AWP 262,144 Word by 32 Bit CMOS Dynamic Random Access Memory MICROCIRCUIT CORPORATION DESCRIPTION + The Accutek AK532256AWP high density memory module is a CMOS dynamic RAM organized in 265K x 32 bit words. The mod ule consists of two standard 256K x 16 bits DRAMs in plastic SOJ |
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ak532256awp256kx | |
AK532256AWContextual Info: AK532256AW 262,144 Word by 32 Bit CMOS Dynamic Random Access Memory ACCUTEK MICROCIRCUIT CORPORATION DESCRIPTION The Accutek AK532256AW high density memory module is a CMOS dynamic RAM organized in 265K x 32 bit words. The module consists of two standard 256K x 16 bits DRAMs in plastic SOJ packages. The assembly has 2 DRAMs mounted on the front side of a |
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ak532256aw | |
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Contextual Info: w a _EDI8F64128C ELECTRONIC DESIGNS INC j 1MByte Secondary Cache for Pentium Systems 128Kx64 Static RAM High Speed CMOS Cache Memory Module Features The EDI8F64128C is a high speed 1MByte secondary 1MByte Secondary Cache Module cache module which is ideal for use with many Intel Pentium |
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edi8f64128c128kx64i8f64128c128kx8+5 | |
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Contextual Info: T T W MS512K8BV-XXXE M/HITE /M ICROELECTRONICS 512Kx8 MONOLITHIC SRAM PRELIMINARY* FEATURES Low Voltage Operation: • Access Times 15,17, 20ns ■ MIL-STD-883 Compliant Devices Available • 3.3V ± 1 0 % Power Supply ■ Revolutionary, Center Power/Ground Pinout |
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ms512k8bv-xxxe512kx8mil-std-883512k8 | |
AK5321024W
Abstract: AK5322048W AK532256AW AK5324096W AK532512W AK5328192W AK536256W
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ak532256awak5321024wak5322048wak5324096w+3 | |
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AK5321024W
Abstract: AK5322048W AK532256AW AK5324096W AK532512W AK5328192W AK536256W
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ak532256awak5321024wak5322048wak5324096w+3 | |
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Contextual Info: AK532256AW 262,144 Word by 32 Bit CMOS Dynamic Random Access Memory ACCUTEK MICROCIRCUIT CORPORATION DESCRIPTION The Accutek AK532256AW high density memory module is a CMOS dynamic RAM organized in 265K x 32 bit words. The module consists of two standard 256K x 16 bits DRAMs in plastic SOJ packages. The assembly has 2 DRAMs mounted on the front side of a |
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ak532256aw | |
Spansion ddr
Abstract: MCP NOR FLASH SDRAM elpida s99pl EHB0020A1MA ELPIDA DDR User
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512mbehb0020a1mas99pl032j0029151-ball+7 | |
au1550
Abstract: mi motherboard circuit diagram ms 7529 au155 amd alchemy au1100 profile AU1550-500 NF 841 switching diode AU1100 "ESP" mba 810 Au1000
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alchemytmau1550tm30283dau1550tmau1550+9 | |
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Contextual Info: RMI Alchemy Au1550™ Security Network Processor Data Book May 2007 Revision E RMI Alchemy™ Au1550™ Security Network Processor Data Book 2007 Raza Microelectronics, Inc. All rights reserved. The contents of this document are provided in connection with Raza Microelectronics, Inc. “RMI” products. RMI makes no representations or warranties with |
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au155032x1632x32 | |
54e4Contextual Info: 4bE O K I D • b ? B 4 2 4 0 ÜÜÜTb' I S 1 ^ 7 « O K I J O K I SEMI CONDUCTOR GROUP semiconductor MSC2320A-XXYS9 r - v r - 2 3 262, 144 BY 36BIT DYNAM IC RAM MODULE GENERAL DESCRIPTION The Oki M SC 2320A-XXY S9 is a fu lly decoded, 2 6 2 ,1 4 4 w ords X 36 bit CMOS dynam ic random |
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msc2320a-xxys936bit320a-xxy51256js+5 | |
PIC16c74 block diagram
Abstract: PIC16C74-04/P
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pic16c7440-pin200nsds30337a-page+4 | |
km418c256bj
Abstract: NZ34 A6Dz
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km418c256b256kx18km418c256bjnz34+1 | |
TAA 840
Abstract: MSM51256
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b4240msc2320a-xxys936bitmsm514256ajs+5 | |
amd alchemy au1100
Abstract: Au1500 a/S3C9004/P9004/C9014/Reset Software for Alchemy Au1000 Processor 0/JTAG AND AMD
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d-79200d-79206flash166amd alchemy au1100+3 | |