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    DDQ17 Search Results

    DDQ17 Datasheets Context Search

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    EIGHT MOSFET ARRAY DIP-18

    Abstract: AN0116NA AN0116NB AN0116ND AN0116WG AN0120NA AN0120NB AN0130NA AN0130NB SOW-20
    Contextual Info: SUPERTEX INC Dl D Ì 07735^5 DDQ17SÖ 0 f * AN01 8 Channel Power M O SFET Array Monolithic N-channel Enchancement Mode Ordering Information b v dss/ ^D SfO N ) min) 160V 200V 300V 320V 400V (max) 350Q 3000 300n 350n 350Q JI b v dqs <3>V’ d s. = 100V Max


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    8 Channel Power Mosfet Array

    Abstract: DDQ17S EIGHT MOSFET ARRAY AN0140ND
    Contextual Info: SUPERTEX INC Dl dÌ J 07735*15 DDQ17SÖ Q 7 ~ V ^ ^ 5 ~ AN01 8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode Ordering Information Order Number / Package b v dss/ 1 * V DS = BVd0S min ^D S {O N ) ' d (ON) (max) (min) 100V Max 1nA 'D SS


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    a/S3C9004/P9004/C9014/Reset Software for Alchemy Au1000 Processor

    Contextual Info: RMI Alchemy Au1210™ Navigation Processor and Au1250™ Media Processor Data Book April 2007 Revision A - Preliminary RMI Alchemy™ Au1210™ Navigation Processor and Au1250™ Media Processor Data Book - Preliminary 2007 Raza Microelectronics, Inc. All rights reserved.


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    au1210au1250a/s3c9004/p9004/c9014/reset software for alchemy au1000 processor PDF

    km418c256

    Abstract: M418C KM418C256A
    Contextual Info: CMOS DRAM KM418C256A/AL/ALL 256K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM418C256A/AUALL is a CMOS high speed 262,144 bit x 18 Dynamic Random Access Memory. Its design is optimized for high performance


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    KM418C256B

    Contextual Info: KM418C256B/BL/BLL CMOS DRAM 256K x18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM418C256B/BLVBLL is a CMOS high spe ed 262,14 4 b it x 18 D ynam ic R andom A cce ss Memory. Its design is optimized for high performance


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    14010B

    Abstract: AU1250
    Contextual Info: RMI Alchemy Au1210™ Navigation Processor and Au1250™ Media Processor Data Book October 2007 Revision B - Preliminary RMI Alchemy™ Au1210™ Navigation Processor and Au1250™ Media Processor Data Book - Preliminary 2007 Raza Microelectronics, Inc. All rights reserved.


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    au1210au125032-bit14010b PDF

    Contextual Info: HYUNDAI SEMICONDUCTOR HYM581000C Series 1M X 8 -b it CMOS DRAM MODULE DESCRIPTION The HYM581000C is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor is mounted for each DRAM.


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    CI 8880

    Abstract: 8880 dtmf dtmf 8870 DTMF mobile DTMF Tone Decoder m-8870 dtmf 20-PIN DDQ1715 M-8870 M-8880
    Contextual Info: ÌCEUXlN g . DTMF RECEIVERS &TRANSCEIVERS INNOVATING SOLUTIONS M-8880 DTMF Transceiver The M -8880 is a complete DTM F Transmitter/Receiver that features adjustable guard time, autom atic tone burst mode, call progress mode, and a fully compatible 6500/6800 micro­


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    m-8880m-8870mmd615024ki1+13mmd7000m-8880-01cm-8880-01pm-8880-01smm-8880-01pcci 88808880 dtmfdtmf 8870dtmf mobiledtmf tone decoderm-8870 dtmf20-pinddq1715 PDF

    Contextual Info: SEIKO INSTRUMENTS U S A blE » • 0123443 DDD1723 LTR « S E I J S-8440AF Power Management IC The S-8440AF is a power m anagem ent 1C fo r portable telephones. It contains a m om entary pow er fail warning circuit and a w atchdog tim er circuit, in addition to seriestype voltage regulators and voltage detectors.


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    AK532256AWP

    Contextual Info: AK532256AWP 262,144 Word by 32 Bit CMOS Dynamic Random Access Memory MICROCIRCUIT CORPORATION DESCRIPTION + The Accutek AK532256AWP high density memory module is a CMOS dynamic RAM organized in 265K x 32 bit words. The mod­ ule consists of two standard 256K x 16 bits DRAMs in plastic SOJ


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    AK532256AW

    Contextual Info: AK532256AW 262,144 Word by 32 Bit CMOS Dynamic Random Access Memory ACCUTEK MICROCIRCUIT CORPORATION DESCRIPTION The Accutek AK532256AW high density memory module is a CMOS dynamic RAM organized in 265K x 32 bit words. The module consists of two standard 256K x 16 bits DRAMs in plastic SOJ packages. The assembly has 2 DRAMs mounted on the front side of a


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    Contextual Info: w a _EDI8F64128C ELECTRONIC DESIGNS INC j 1MByte Secondary Cache for Pentium Systems 128Kx64 Static RAM High Speed CMOS Cache Memory Module Features The EDI8F64128C is a high speed 1MByte secondary 1MByte Secondary Cache Module cache module which is ideal for use with many Intel Pentium


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    Contextual Info: T T W MS512K8BV-XXXE M/HITE /M ICROELECTRONICS 512Kx8 MONOLITHIC SRAM PRELIMINARY* FEATURES Low Voltage Operation: • Access Times 15,17, 20ns ■ MIL-STD-883 Compliant Devices Available • 3.3V ± 1 0 % Power Supply ■ Revolutionary, Center Power/Ground Pinout


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    AK5321024W

    Abstract: AK5322048W AK532256AW AK5324096W AK532512W AK5328192W AK536256W
    Contextual Info: DESCRIPTION Accutek Microcircuit Corporation AK532256AW 262,144 Word by 32 Bit CMOS Dynamic Random Access Memory The Accutek AK532256AW high density memory module is a CMOS dynamic RAM organized in 265K x 32 bit words. The module consists of two standard 256K x 16 bits DRAMs in plastic SOJ


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    ak532256awak5321024wak5322048wak5324096w+3ak532512wak5328192wak536256w PDF

    AK5321024W

    Abstract: AK5322048W AK532256AW AK5324096W AK532512W AK5328192W AK536256W
    Contextual Info: Accutek Microcircuit Corporation AK532256AW 262,144 Word by 32 Bit CMOS Dynamic Random Access Memory DESCRIPTION The Accutek AK532256AW high density memory module is a CMOS dynamic RAM organized in 265K x 32 bit words. The module consists of two standard 256K x 16 bits DRAMs in plastic SOJ


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    ak532256awak5321024wak5322048wak5324096w+3ak532512wak5328192wak536256w PDF

    Contextual Info: AK532256AW 262,144 Word by 32 Bit CMOS Dynamic Random Access Memory ACCUTEK MICROCIRCUIT CORPORATION DESCRIPTION The Accutek AK532256AW high density memory module is a CMOS dynamic RAM organized in 265K x 32 bit words. The module consists of two standard 256K x 16 bits DRAMs in plastic SOJ packages. The assembly has 2 DRAMs mounted on the front side of a


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    ak532256aw PDF

    Spansion ddr

    Abstract: MCP NOR FLASH SDRAM elpida s99pl EHB0020A1MA ELPIDA DDR User
    Contextual Info: PRELIMINARY DATA SHEET 32Mb Flash Memory + 512Mb DDR SDRAM MCP EHB0020A1MA Description DDR SDRAM Specifications The EHB0020A1MA is a MCP Multi Chip Package ; TM 32M bits flash memory organized the Spansion (S99PL032J0029) and the Elpida 512M bits DDR SDRAM in one package.


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    512mbehb0020a1mas99pl032j0029151-ball+7266mbpsm01e0107e1017e20spansion ddrmcp nor flash sdram elpidas99plelpida ddr user PDF

    au1550

    Abstract: mi motherboard circuit diagram ms 7529 au155 amd alchemy au1100 profile AU1550-500 NF 841 switching diode AU1100 "ESP" mba 810 Au1000
    Contextual Info: AMD Alchemy Au1550™ Security Network Processor Data Book May 2006 Publication ID: 30283D AMD Alchemy™ Au1550™ Security Network Processor Data Book 2006 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro


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    alchemytmau1550tm30283dau1550tmau1550+9mi motherboard circuit diagram ms 7529au155amd alchemy au1100 profileau1550-500nf 841 switching diodeau1100espmba 810au1000 PDF

    Contextual Info: RMI Alchemy Au1550™ Security Network Processor Data Book May 2007 Revision E RMI Alchemy™ Au1550™ Security Network Processor Data Book 2007 Raza Microelectronics, Inc. All rights reserved. The contents of this document are provided in connection with Raza Microelectronics, Inc. “RMI” products. RMI makes no representations or warranties with


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    au155032x1632x32 PDF

    54e4

    Contextual Info: 4bE O K I D • b ? B 4 2 4 0 ÜÜÜTb' I S 1 ^ 7 « O K I J O K I SEMI CONDUCTOR GROUP semiconductor MSC2320A-XXYS9 r - v r - 2 3 262, 144 BY 36BIT DYNAM IC RAM MODULE GENERAL DESCRIPTION The Oki M SC 2320A-XXY S9 is a fu lly decoded, 2 6 2 ,1 4 4 w ords X 36 bit CMOS dynam ic random


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    PIC16c74 block diagram

    Abstract: PIC16C74-04/P
    Contextual Info: M PIC16C74 ic r o c h ip 40-Pin EPROM-Based 8-Bit CMOS Microcontroller FEATURES PACKAGE TYPES H ig h -P e rfo rm a n c e R IS C -lik e C P U • Only 35 single word instructions to learn • All single cycle instructions 200ns except for program branches which are two-cycle


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    km418c256bj

    Abstract: NZ34 A6Dz
    Contextual Info: CMOS DRAM KM418C256B 256K x 18 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION T his is a fam ily of 2 6 2,144 x 18 bit Fast Page M ode C M O S DRAM s. Fast Page M ode o ffe rs high speed random acce ss of m em ory cells w ithin the sam e row. A ccess tim e -6, -7 or -8 , pow er consum ption (Norm al


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    km418c256b256kx18km418c256bjnz34+1a6dz PDF

    TAA 840

    Abstract: MSM51256
    Contextual Info: 4bE O K I D • b ? B 4 2 4 0 ÜÜÜTb' I S 1 ^ 7 « O K I J O K I SEMI CONDUCTOR GROUP semiconductor MSC2320A-XXYS9 r - v r - 2 3 262, 144 BY 36BIT DYNAM IC RAM MODULE GENERAL DESCRIPTION The Oki M SC 2320A-XXY S9 is a fu lly decoded, 2 6 2 ,1 4 4 w ords X 36 bit CMOS dynam ic random


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    b4240msc2320a-xxys936bitmsm514256ajs+5msm51256jsmsm511000ajst-46-23-17taa 840msm51256 PDF

    amd alchemy au1100

    Abstract: Au1500 a/S3C9004/P9004/C9014/Reset Software for Alchemy Au1000 Processor 0/JTAG AND AMD
    Contextual Info: JTAG-Booster for AMD Alchemy Solutions Processors P.O: Box 1103 Kueferstrasse 8 Tel. +49 7667 908-0 sales@fsforth.de • • • • D-79200 Breisach, Germany D-79206 Breisach, Germany Fax +49 (7667) 908-200 http://www.fsforth.de AMD Alchemy Solutions Processors


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    d-79200d-79206flash166amd alchemy au1100+3au1500a/s3c9004/p9004/c9014/reset software for alchemy au1000 processor0/jtag and amd PDF