DD27 Search Results

LY5160

Abstract: 5180-G
Contextual Info: SIEMENS AKTIEN GESELLS CHA F M7E D • flEBSbOS DD27141 2 » S I E G S IE M E N S s u p e r -r e d YELLOW GREEN 5 mm LED LAMP LED Lamps T 1 3/4 LS 5180 LY 5180 LG 5180 FEATURES * * * * * * Diffused Lens Wide Viewing Angle 140° With Standoffs T13/< (5 mm) Package Size

A106011

Contextual Info: , s SIEMENS AKTIENGESELLSCHAF A 1 6 M7E » • fl535bOS DD27TDS 6 « S I E G Features: • TO-18 metal-glass housing • low temperature coefficient • high linearity A 1 — _ T -4 M 7 Application: • oil burner control • exposure meters • automatic dimmers

2N6756

Abstract: 2N6755 F102 ISQ0020F
Contextual Info: DE I 3 4 t.Ttz.V4 DD2771G Q ~ f A4 3469674 FAIRCHILD SEMICONDUCTOR 84 D 2 7790 2N6755/2N6756 T - 3 ? - / / N-Channel Power MOSFETs, 14 A, 60 V/100 V FA IR C H ILD A Schlumberger Company Power And Discrete Division Description TO-2Q4AA These devices are n-channel, enhancement mode, power

Contextual Info: N ANER PHILIPS/DISCRETE b3E bb53331 DD273SD 6^3 * A P X D BT152 SERIES y v THYRISTORS Glass-passivated thyristors in TO—220AB envelopes, which are particularly suitable in situations creating high fatigue stresses involved in thermal cycling and repeated switching. Applications

Contextual Info: i i N AMER PHILIPS/DISCRETE b'lE »’ bbS3T31 DD27b3b TT3 « A P X BCY70 to 72 y v SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-18 metal envelopes intended for general purpose industrial applications. The BCY71 is a low noise version. Q U IC K R E F E R E N C E D A T A

Contextual Info: I I I N AUER PHILIPS/DISCRETE t.'lE D bbSa^l DD27bl]i 5 2 3 H A P X P h ilip s S em ico n d u c to rs BCX23 D a ta sh eet statu s P re lim in a ry s p e c ific a tio n d a te o f issue J u n e 1 990 Silicon planar epitaxial transistor QUICK REFERENCE DATA

Contextual Info: m bbS3R31 DD27RB1 bTT « A P X JC556 to 558 N AUER PHILIPS/DISCRETE b'lE D SILICON PLANAR EPITAXIAL TRANSISTORS General purpose pnp transistors in plastic TO-92 envelopes, especially suitable for use in driver stages of audio amplifiers. QUICK REFERENCE DATA

Contextual Info: 3875081 G E SOLID STATE 01E 19738 Optoelectronic Sp e c ific atio n s_ H A R R IS S EM IC O N D 37E SECTOR D 430S271 DD272G G S 0 c -T - 4 1 -8 7 Photo Coupled Isolator H11J1- H11J5 Ga As Infrared Em itting Diode & Light Activated T riac Driver The GE Solid State HI IJ series consists of a gallium arsenide infrared

triac BT 317

Abstract: BT 317 triac triac BT 06 600 triac BT 24 BT134 BT134-500D triac BT 06 400 triac BT 06 700 triac BT 134 triacs BT 134 w
Contextual Info: N AMER PHILIPS/DISCRETE b^E T> WM bbSa^Bl DD2715b 1Ô7 HIAPX BT134 SE R IE S y v _ _ TR IA C S Giass-passivated 4 Ampere triacs intended fo r use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance w ith very low thermal

curve set t144

Abstract: MPSA10
Contextual Info: FAIRCHILD SEMICONDUCTOR 64 ]>E" 1 3 4 ^ 7 4 DD273ci2 ^ IT ^mwwwwwuuuuuuua FA IR C H ILD IV1PSA10 w iroM iu r NP N Am plifier Transistor A Schtumberger Com pany Vceo . . . 40 V Min PACKAG E M PSA10 ® TO-92 A B S O L U T E M AXIM UM RAT IN G S (Note 1)

Contextual Info: I I b^E D • bb53T31 DD27^Sb 43H H A P X JA100 JA101 A PNP SMALL-SIGNAL TRANSISTORS PNP small-signal transistors in TO-92 envelopes, recommended for general purpose amplifier applications. The complementary types are the JC500 and JC501 respectively. QUICK REFERENCE DATA

JC556

Abstract: JC556A JC556B JC557 JC557A JC557B JC557C JC558 JC558A
Contextual Info: m bbSB^ai DD27TB1 bIT * A P X N AUER PHILIPS/DISCRETE JC556 to 558 b*îE P SILICON PLANAR EPITAXIAL TRANSISTORS General purpose pnp transistors in plastic TO-92 envelopes, especially suitable for use in driver stages of audio amplifiers. Q U IC K R E F E R E N C E D A T A

TRIAC BT 136

Abstract: TRIAC BT 127 BT 136 TRIAC TRIAC BY 136 bt 13 g BT136F DDB7111 DS614 UBC667 bte 12 triacs
Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bbS3T31 DD271Ä4 041 « A P X Il BT136F SERIES FULL-PACK TRIACS G la ss-p assivate d 4 a m p e re tr ia c s in S O T - 1 8 6 en v elo p e s, w h ic h fe a tu re an e le c tr ic a lly is o la te d m o u n tin g base. T h e y are in te n d e d f o r use in a p p lic a tio n s re q u irin g h ig h b id ir e c t io n a l tra n s ie n t a n d b lo c k in g

Contextual Info: N AP1ER PHILIPS/DISCRETE b'JE D Philips Semiconductors_ bt.53^31 DD27Bb5 070 * A P X _Preliminary specification Triac BT139 series H GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated 16 A triacs intended for use in applications

bt134

Contextual Info: N AMER PHILIPS/DISCRETE bbSB^Bl DD2715b Ifl? APX BT134 SERIES b^E T> J V. TRIACS Glass-passivated 4 Ampere triacs intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance with very low thermal

BT151F-500

Abstract: crowbar circuit CIT Relay BT151F DDS7314 BT151F500 D8561
Contextual Info: I I N AUER P H I L I P S / D I S C R E T E b*îE » • bbSBIBl DD2731Q THH « A P X I A BT151F SERIES _ FULL-PACK THYRISTORS Glass-passivated thyristors in SO T-186 envelopes, incorporating electrical isolation between the

ha 431 transistor

Abstract: BRY39 BRY39 circuit BRY39 application data MSB028 philips bry39 Programmable Unijunction Transistor BRY3 27B2S transistor ag
Contextual Info: N AMER PHILIPS/DISCRETE bTE ]> bhSaTai DD27Ô2S RflT Philips S em iconductors Data sheet status Preliminary specification date ol Issue December 1990 Programmable unijunction transistor QUICK REFERENCE DATA DESCRIPTION A planar pnpn trigger device in a TO-72 metal envelope, intended for

LPD80

Contextual Info: SIEMENS AKTIENGESELLSCHAF i4?E » • fl23SbOS DD27S0A T « S I E G SIEMENS LPD-80A PHOTODARLINGTON ''"V" ¿"i Advance Data Sheet Package Dimensions in Inches (mm «0 I6il 6» I« r " i r ~ -•»i !" 0U<0«l Maximum Ratings • • • • • Collector Emitter Voltage

single one jk flipflop

Abstract: PAL22R
Contextual Info: DE:| 025752b DD271* S 7 ADV MICRO PL A/ PL E/ AR R AYS Tt PAL22RX8A High Speed Programmable Array Logic T-46-13-47 Ordering Information Features/Benefits • Programmable flip-flops allow J-K, S-R, T or D-typet for the most efficient use of product terms • 8 Input/output macrocells for flexibility

bf370

Contextual Info: N AMER PHILIPS/DISCRETE bTE D I I bbS3^31 DD27b8D TOO APX o ro /u SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 envelope, intended for use in large-signal handling i.f. pre­ amplifiers of TV receivers in combination with surface acoustic wave filters.

LG LED

Abstract: 5180-G
Contextual Info: SIEMENS AKTIENGESELLSCHAF 47E D flZ35b05 DD27141 2 m S I Z G SIEMENS LS 5 1 8 0 ^ /-^ LY 5180 LG 5180 SUPER-RED YELLOW GREEN T13/4 5 mm LED LAMP Package Dimensions mm S.9 5,5 s s | ! r cm m i S S N « - .Œ - LO - Í tx ~ - — 1.8 ' J .2 •s ^5,7 5,4 1 0.8

c557b

Abstract: transistor c557b C556A c557b p h BC551 transistor BC 557B 553c BC556A BC558 driver transistor IC 557B
Contextual Info: N AMER PHILIPS/DISCRETE bTE D m ^53^31 DD27S75 7bB H A P X BC556 to 558 SILICON PLANAR EPITAXIAL TRANSISTORS General purpose p-n-p transistors in plastic TO-92 envelopes, especially suitable fo r use in d rive r stages o f audio a m plifiers. Q U IC K R E F E R E N C E D A T A

Thyristor BT 102

Abstract: BT thyristor thyristor BT 200 N5064 relay 12v 100A 2N5064 thyristor BT
Contextual Info: N AMER P H I L I P S / D I S C R E T E b'ìE D • 1^53^31 DD2714GD 'iôb B A P X A 2N5064 THYRISTOR Fully-diffused thyristor in TO —92 package, w ith low gate current requirement suitable fo r driving from 1C outputs. Applications include relay and coil pulsing, control o f small DC motors, small lamps,

L14F1

Contextual Info: 3875081 G E SO LID 01E STATE 19660 Optoelectronic Specifications_ HARRIS SEMICOND SECTOR Light Detector 37E D H 4302571 DD2712S □ ¡ HAS Planar Silicon Photo-Darlington Amplifier L14F1,L14F2 The GH Solid State L14F1 and L14F2 are supersensitive NPN Planar Silicon