DD000 Search Results

1N3779

Abstract: 1N3780 1N3781 1N3782 1N3783 1N3784 1N4565 1N4565A 1N4566 1N4566A
Contextual Info: AMERICAN POWER DEVICES 53E D 0737135 DD000S5 T TCZENER DIODES -r -ii-o 'j T-U-ll T 400 mW & 500 mW, TC DO-7 Case Type Zener Voltage Min. Max. V7 v7 V V DO-7 Case Test Current Maxlmumi Dynamic Impedance Temperature Range mA !z t Z Z T @ IZ T n °C % /°C 1N3779

VI-261-CU

Abstract: VI-262-CU VI-210CV vi-213 VI-263-CU VI-264-CU VI-100 VI-260-CV vi261cu vi-100 vicor
Contextual Info: VICOR CORP/ WESTCOR CORP AT 15 1 POWER ^475020 DD000D7 4 2 0 0 T-s n-n W A T T SUPPLY SHOWN IN ACTUAL SIZE VI-200 SERIES PRELIMINARY DESIGN DATA SHEET GENERAL DESCRIPTION Westcor's new VI-200 Series is an enhanced version of our industry standard VI-100. Power has been

Contextual Info: i 6 /CANADA/0PT0ELEK 10E 1 • 30 3 D b l 0 DD00017 4 « C A N A ‘ C86008E, G86009E Infrared Emitters Developmental Types 820 nm High-Speed Gallium Aluminum Arsenide IR Emitters With Integral Fiber Optic Ouput Cable and Connector For Continuous DC or Pulsed Operation

250A darlington transistor

Abstract: npn darlington transistor 150 watts Darlington 40A 2N6055 transistor transistor 1060 MJ13330 npn darlington transistor 200 watts mj13015 MJ-13330 MJ1000
Contextual Info: GENERAL TRANSI STO R CORP 24E D • 3^2 000 1 DD000ti3 t. General T ran sisto r Corporation CASE TO-3 t 33-ZS -T'33-3 -r-33 -is * 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 lc (M A X ) = 2 - 5 0 A

SK304

Abstract: SK3023 SK302 SK306
Contextual Info: DIOTEC ELECTRONICS CORP SflE D • DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax:(310)767-7958 204^107 DD00013 Tflb « D I X Data Sheet No.: SBDA-302-A '"’’O O'*» - 1 1 v 3 AMP SCHOTTKY BARRIER RECTIFIERS

20KV

Abstract: COMPENSATING CAPACITORS N750
Contextual Info: WR IG HT C A P A C I T O R S INC 40E D • 1122318 DD00037 5 ■ SINGLE SHEET MICROWAVE CAPACITORS h-05-05-#7 WCI’s single sheet SS ceramic capacitor chips are intended for hybrid applications from direct current thru gigahertz frequencies. Their dual plate

.7J6

Abstract: 6AI10
Contextual Info: 8 1. MECHANICAL DIMENSIONS : o OJ 00 CO 01 o cK OJ I 01 I 12,70 [0,500] lnI i< 89 [0,350] in o B DD000D00 o LDJLOJLO JLOJL o OJ o KXmultiple 0> XD H S1618C C1 YYWW \0 VJD UUüÜuuu D000000. 0,46 [0,018] 0,64 [0,025] 1,27 [0,050] 1,27 [0,050] SUGGESTED PAD LAYDUT

SPS60

Abstract: 1R170 16312 1N1239 SPS60 steel 3773 P DD0003 SPS200 microsemi 1-E 380 sps2003
Contextual Info: n i C R O S E M I CO RP/ R P PI 14E D I tllt.0 4 0 DD0003? 3 | MICRO A MICROS EMI COMPANY 7~ Solid Pac High Voltage Rectifiers Six Phase Star SERIES I THEORETICAL RECOMMENDED MAX OUTPUT . D.C. OUTPUT VOLTAGE . VOLTS DC NUMBER. PART NUMBER SPSHV-16 SPSHV-20

IFM D100

Abstract: DD0001 relais demarrage DD0001 D100 D100 IFM boitier DIN UNIVERSEL transistor ac 127 nennspannung 24v power relay f4 D100
Contextual Info: R Auswertesysteme DD0001 4,5 35,5 75 Drehzahlwächter 61,2 1,5 110 6,9 55 Bauform D100 mit Relais- und Transistorausgang 37,5 Verwendung Einstellbereiche Universelle Auswertung von Impulsfolgen auf Sollwertüber-/unterschreitung ; Drehzahlüberwachung [Imp./min]

DZ24047

Abstract: DZ24 diode zener 4,7v 2w DZ2W062 DZ24056 zener 15 1w 713 zener DZ24091 DZ2W091 Zener diode 1w 5,1v
Contextual Info: NEW NEW Zener Diodes Series 1W/2W Zener Diodes Series Unit: mm These series are new developed small surface mount package zener diode series which power dissipation are 1W DZ2W series or 2W(DZ24 series), mainly used for surge absorption. 0.45 ±0.10 1W type / DZ2W series

Socket S1g1

Abstract: AMD Turion 64 Mobile Technology AM2 amd amd AM2 opteron pin package HTC B834 Socket S1g1 Processor Functional AMD SEMPRON 3000 socket 754 DIAGRAM SEMPRON Socket 754 AM2 31117 CMPXCHG16B
Contextual Info: BIOS and Kernel Developer's Guide for AMD NPT Family 0Fh Processors Publication # 32559 Revision: 3.16 Issue Date: November 2009 2005-2009 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices,

SA6954

Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
Contextual Info: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to

LG monitor 17 inch wiring diagram

Abstract: 567 tone ltls tone decoder VOLTAGE LEVEL RELAY SJ 175 230 audio amplifier IC 810 eprom 27C16 ic eprom 27c16 lg LED monitor circuit diagram RF encoder used in transmitter
Contextual Info: CML Semiconductor Products o n u m PRODUCT INFORMATION n n / ~ FX2030 C/Z h v brid Low-Power Selea II Encoder/Decoders 45E » 237437b 0000075 PUBLICATION D/2030/1 MARCH 1983 PRODUCT INFORMATION _ CONSUMER _ 1 BKMCR MI CROCIRCUITS FX2030C FX2030Z LOW POWER

Contextual Info: CML Semiconductor Products o n u m PRODUCT INFORMATION n n / ~ FX2030 C/Z h v brid Low-Power Selea II Encoder/Decoders 45E » 237437b 0000075 PUBLICATION D/2030/1 MARCH 1983 PRODUCT INFORMATION _ CONSUMER _ 1 BKMCR MICROCIRCUITS FX2030C FX2030Z LOW POWER

SD 4652

Abstract: bel 187 transistor working MN101C00 display wd
Contextual Info: MICROCOMPUTER MN101C00 MN101C00 Series C Source Code Debugger User’s Manual Pub.No.11430-031E MS-DOS and Eindows are registered trademarks of Microsoft Incorporated. PanaX Series is a trademark of Matsushita Electric Industrial Co., Ltd. PC/AT is a registered trademark of International Business Machine Incorporated.

A81DC

Abstract: a21dc a51dc SG 2368 FE8800 ED8000 E78000 FA6400 0110FFFF e7040
Contextual Info: MOTOROLA Order at ANE408/0 SEMICONDUCTOR APPLICATION NOTE ANE408 Previously ANE008 Logarithmic/Linear Conversion Routines for DSP56000/1 Prepared by: Eric Cheval Motorola G eneva, Switzerland I. INTRODUCTION DSP chips are often connected to mono-circuits (cofidecs) in telecommunication applications. When programmed *Cs multichannel DTMF

DD056

Abstract: DD058 DD2020 DD4526 DD000 DD001 DD006 DD1000 DD1001 DD1003
Contextual Info: Rectifier diodes Rectifier diodes — general purpose types rsm VR max. max. V rw M max. 10 ms V V V V Type rr M V I F(AV) @ Photographs actual size I fsm R max. @ VR max. & T = 25°C max. ma V "^"tag I fr m A °c max. max. (1 Oms) @Tj = 25°C A A 80(1 70(1

JESD97

Abstract: M29DW128F TSOP56 6C80
Contextual Info: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

SA452

Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
Contextual Info: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this

S29WS256N

Abstract: S71WS512NE0BFWZZ
Contextual Info: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip

M29W128FL

Abstract: Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56
Contextual Info: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

FL128P

Abstract: SPANSION FL128P
Contextual Info: S25FL128P 128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Bus Data Sheet S25FL128P Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,

samsung electronics ba41

Abstract: BA175
Contextual Info: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

BA379

Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
Contextual Info: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz