D2 144 TRANSISTOR Search Results

Contextual Info: Datasheet Standard LCD Segment Driver BU9797FUV-M MAX 144 Segments SEG36xCOM4 Features  Integrated RAM for Display Data (DDRAM): 36 x 4 bit (Max 144 Segment)  LCD Drive Output: 4 Common Output, Max 36 Segment Output  Integrated Buffer AMP for LCD Driving

BFR95

Abstract: 1 Fp 33 transistor bfr95 philips QDHS773 D2 144 transistor
Contextual Info: Product specification Philips Semiconductors r^ 3 3 -o s NPN 3.5 GHz wideband transistor DESCRIPTION 711062b QDHS773 H76 M P H I N SbE D PHILIPS INTERNATIONAL BFR95 PINNING NPN resistance-stabilized transistor in a SOT5 TO-39 metal envelope, with collector connected to the case.

bfr95 philips

Abstract: bfr95
Contextual Info: Product specification Philips Sem iconductors 7- 3 3 ' O S NPN 3.5 GHz wideband transistor DESCRIPTION 711002b D0M5773 H76 M P H I N SbE D PHILIPS INTERNATIONAL BFR95 PINNING NPN resistance-stabilized transistor in a SOT5 TO-39 metal envelope, with collector connected to the case.

CEM8207

Contextual Info: CEM8207 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 20V, 6A, RDS ON = 20mΩ @VGS = 4.5V. RDS(ON) = 30mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

CEM8207

Contextual Info: CEM8207 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 20V, 6A, RDS ON = 20mΩ @VGS = 4.5V. RDS(ON) = 30mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

BFR94

Abstract: NF751 BFR94A Ferroxcube cross reference
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFR94A NPN 3.5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 3.5 GHz wideband transistor DESCRIPTION BFR94A PINNING

BFR94

Abstract: BFR94A
Contextual Info: Philips Sem iconductors bbS3^31 b7=5 • APX Product spe cifica tion NPN 3.5 GHz wideband transistor BFR94A N AMER PHILIPS/DISCRETE DESCRIPTION bTE ]> PINNING NPN resistance-stabilized transistor in a SOT122E capstan envelope. PIN 1 collector It features extremely low cross

BFG34

Abstract: ON4497 TRANSISTOR 185 846 TRANSISTOR 726
Contextual Info: Philips Semiconductors Product specification -P .3 NPN 4 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION 3 - 0 S S ShE BFG34 TllDflEfci DDMSGSb T15 • PHIN PINNING NPN transistor in a four-lead dual-emitter plastic SOT103 envelope. It is designed for wideband

BFG34

Abstract: 8723 transistor ON4497 UBS357 M883S
Contextual Info: P hilips Sem iconductors bb53^31 DD311b7 Ml? NPN 4 GHz wideband transistor ^ BFG34 N AflER PH ILIPS/DISCRETE DESCRIPTION b'iE » PINNING NPN transistor in a four-lead dual-emitter plastic S O U 03 envelope. It is designed for wideband application in CATV and MATV

Contextual Info: Philips Semiconductors b b 5 3 c]31 Q0311b7 417 • APX^£liSiJ£U SSSSi£!l NPN 4 GHz wideband transistor £ BFG34 N AflER PHILIPS/DISCRETE DESCRIPTION b^E » PINNING NPN transistor in a four-lead dual-emitter plastic SOU 03 envelope. It is designed for wideband

BFR95

Contextual Info: PJjjjjP^ejjiconductor^^^^ • bbS3T31 0031flflM ^72 gg^py^Productspecification NPN 3.5 GHz wideband transistor BFR95 N AMER PH ILIP S/ D IS C R ET E DESCRIPTION b*1E D PINNING NPN resistance-stabilized transistor in a SOT5 TO-39 metal envelope, with collector connected to the case.

BFR95

Abstract: transistor b 745 DD31
Contextual Info: Philips Semiconductors bbS3^31 0 0 3 ]iû fl4 R72 • ^ p x ^ P ro d u c ts p e c ific a tio n NPN 3.5 GHz wideband transistor BFR95 H AMER PHILIPS/DISCRETE DESCRIPTION blE D PINNING NPN resistance-stabilized transistor in a SOT5 TO-39 metal envelope, with collector connected to the case.

BUK9MPP-55PRR

Abstract: MS-013 SO20 br 6500
Contextual Info: BUK9MPP-55PRR Dual TrenchPLUS logic level FET Rev. 01 — 14 May 2009 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring

Contextual Info: BUK9MPP-55PRR Dual TrenchPLUS logic level FET Rev. 01 — 14 May 2009 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring

DIN 32676

Abstract: CLASS 2500 VALVE PRESSURE CHART transistor sms asme transistor D 322 DIN 43650 form a P122D din 64 pin ribbon type c RG2 -relay valve B16-5-1988
Contextual Info: 8032 INLINE Flow Switch with On/Off indicator • DN 5/16“ to 2“ orifice • Local indicator • Adjustable switching contact transistor or relay • Adjustable hysterisis and delay time Type 8032 can be combined with. Type S030 Fitting Type 6013 Type 6213

TRANSISTOR SMD MARKING CODE H11

Abstract: smd transistor marking a7h B1354 transistor p13 SAA7114E MHC611 H1245 MARKING CODE SMD ICo4 SAA7114H
Contextual Info: SAA7114 PAL/NTSC/SECAM video decoder with adaptive PAL/NTSC comb filter, VBI data slicer and high performance scaler Rev. 03 — 17 January 2006 Product data sheet 1. General description The SAA7114 is a video capture device for applications at the image port of Video

SAA7114

Abstract: SMD A7H YSCY12 AI23 LBGA156 LQFP100 SAA7114E SAA7114H ADH11
Contextual Info: SAA7114 PAL/NTSC/SECAM video decoder with adaptive PAL/NTSC comb filter, VBI data slicer and high performance scaler Rev. 03 — 17 January 2006 Product data sheet 1. General description The SAA7114 is a video capture device for applications at the image port of Video

ICS872S33

Abstract: lmt6 ICS872S33CYLF
Contextual Info: ICS872S33 HITLESS SWITCH CLOCK GENERATOR W/HSTL FANOUT BUFFER GENERAL DESCRIPTION FEATURES The ICS872S33 is a PLL based clock generator, ICS clock redundancy circuit crc and 33 HSTL output HiPerClockS fanout buffer designed specifically for redundant

Contextual Info: STU/D608S SamHop Microelectronics Corp. Feb. 06 2007 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m Ω ) Max Rugged and reliable. 55 @ VGS = 10V 60V TO-252 and TO-251 Package.

Contextual Info: Green Product STU/D606S S a mHop Microelectronics C orp. Ver 1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS ON . PRODUCT SUMMARY V DSS R DS(ON) (m Ω) Max ID Rugged and reliable. 60 @ VGS=10V

L084A

Abstract: bl043 bl083 T6005A ed84 L064A
Contextual Info: AT6000/LV Series Features • • • • • • • • • • High Performance System Speeds > 100 MHz Flip-Flop Toggle Rates > 250 MHz 1.2 ns/1.5 ns Input Delay 3.0 ns/6.0 ns Output Delay Up to 204 User l/Os Thousands of Registers Cache Logic Design

TDA3541

Abstract: tda3510 TDA1047 tda2030 ic audio amplifier TDA1044 tda3530 TCA440 TCA660 BD876 7809A
Contextual Info: ELECTRONIC COMPONENTS DIGEST Integrated Circuits Discrete Semiconductors transistors thyristors diodes JSC C OMPE L Contents GLOSSARY . . . . . . . . . . . . . . . . . . . . . . . . 2 INTEGRATED CIRCUITS TV/Video ICs . . . . . . . . . . . . . . . . . . . . .

equivalent transistor UM 66

Abstract: BF 182 transistor transistor bf 244 AT-21400-G
Contextual Info: AT-21400 20 GHz NPN Silicon Bipolar Oscillator Transistor Whit H E W LETT fti'jZ fl PA CK A R D Chip Outline1 Features • • • • Fundamental Oscillation to > 20 GHz Low Phase Noise Compared to GaAs FETs High S21 Gain: 9.5 dB Typical at 4 GHz High MAG: 16.5 dB Typical at 4 GHz

BFR94

Abstract: BFR94A BS3C TRANSISTOR FQ BFR-94
Contextual Info: • ^ 53^31 0031070 ^7=5 IA PX , Product specification NPN 3.5 GHz wideband transistor BFR94A N AUER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN resistance-stabilized transistor in a SOT122E capstan envelope. PIN 1 collector It features extremely low cross