D0175 Search Results

Contextual Info: H I T A C H I / LOGIC/ARRAYS/MEM S IE ]> • HN28F4001 Series D01753S 2TT ■ H IT 2 Preliminary 4M 512K x 8-bit Flash Memory ■ DESCRIPTION Th^ Hitachi HN28F4001 is a 4-Megabit CMOS Rash Memory organized as 524,288 x 8-bit. The HN28F4001 is capable of in-system electrical chip and block erasure and

Contextual Info: SAMSUNG ELECTRONICS INC b7E T> 7 ^ 4 1 4 2 D017532 447 « S U G K KM658128/L/L-L/LD/LD-L Pseudo SRAM 128K X 8 Bit CMOS Pseudo Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: — CE A ccess Time . 80,100,120ns Max. — Cycle Tim e . Random R ead/W rite Cycle

8051 microcontroller LED dot matrix

Abstract: REL316 bdl 39 jb ds8qc T2D8 microcontroller 8051 application of alarm clock countdown timer using 8051 microcontroller tft interface with 8051 8051 based 20 pin Ic Digital countdown timer DS82CH
Contextual Info: DS80CH10/DS82CH10/DS80CL10/DS82CL10 P R E L IM IN A R Y n . | . A O DS80CH10/DS82CH10 DS80CL10/DS82CL10 Green Energy Manager UALLAO s e m ic o n d u c to r PRODUCT SPECIFICATION V2.2 PRELIMINARY Copyright 1995 by Dallas Semiconductor Corporation. All Rights Reserved. For important information regarding

TLR325

Abstract: TLR324
Contextual Info: TT î Ër| TO T V E S D D D 175 50 9097250 TOSHIBA DISCRETE/OPTO) ä |~~ 99D 17220 Q T -^ \-$ 3 TLR324, TLR325, TLR326, TLR327, TLR352, T L R 3 5 3 RED COLOR I DIGIT AND 2 DIGITS LE D D ISPLA Y • 12.7am Charactâr Height Red Color Numerical and with Polarity Display.

74HCT123

Abstract: 74hc123 philips 54HC123 T423
Contextual Info: File Number 1708 T'5l-l9-00 High-Speed CMOS Logic Dual Retriggerabie Monostable Multivibrators with Resets T y p e Features: • Overriding RESET Terminates Output Pulse ■ Triggering From the Leading or Trailing Edge • Q and Q Buffered Outputs • Separate Resets

Contextual Info: Ordering number : EN4263B Monolithic Digital 1C _ LB1823 SAffYO Power Brushless Motor Predriver IC for OA Applications Overview Package Dimensions The LB 1823 is a predriver IC developed for driving power brushless motors in office automation applications.

TI AIH

Abstract: R 161 730 000
Contextual Info: O K I Semiconductor MSM51 V17160 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17160 is a new generation Dynamic RAM organized as 1,048,576-word x 16-bit configuration. The technology used to fabricate the MSM51V17160 is OKI's CMOS silicon gate process technology.

2N6282 RCA

Abstract: 2N6284 RCA 2N6282 2N6285 RCA 2N6287 RCA 2n6285 2N6287 cs 6-07 amplifier transistor 2N6284 2N6283
Contextual Info: 3875081 G E SOLID STATE- 01 ¿ F § 3fl7S0fll □D172Bci b | File Number 1001 DarlingtonPowerTransi 2N6282, 2N6283, 2N6284, 2N6285, 2N6286, 2N6287 20-Ampere Complementary N-P-N and P-N-P Monolithic

Contextual Info: PRELIMINARY IDT70V06S/L HIGH-SPEED 3.3V 16Kx 8 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simulta­ neous reads of the same memory location • High-speed access — Commercial:25/35/55ns max.

DD1750

Contextual Info: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.

KM64258BP-15

Abstract: KM64258BP/J-25 KM64258
Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7 ^ 4 1 4 2 GD17Sbb AST ■ SP1GK KM64258B CMOS SRAM 6 4 K X 4 Bit High-Speed CMOS Static RAM With OE FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns (max.) • Low Power Dissipation Standby (TTL) : 40mA (max.)

Contextual Info: M B86936 FUJITSU 930 SERIES 32-BIT RISC EMBEDDED PROCESSOR APRIL, 1996 • On-chip clock generator circuit FEATURES • JTAG test interface • 25 and 50 MHz versions • Emulator support hardware • Clock doubler for 50 MHz version • Single vector trapping

Contextual Info: bl E D • bSMTÖES 0 0 1 7 5 ^ 2*îD ■ MITI ^rg MITSUBISHI MEMORY/ASIC v MITSUBISHI LSIs M5M4V17900AJ,TP,RT-6,-7,-8 FAST PAGE MODE 18874368-BIT ( 2097152-WORD BY 9-BIT ) DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (T O P V IE W ) This is a family of 2097152-word by 9-bit dynamic RAMS,

AUDIO CIRCUIT 6283

Abstract: ic 6283 circuit diagram l 6283 2N6282 RCA 2N6282 d 6283 ic d 6282 ic IC 6283 2N6287 RCA
Contextual Info: 3875081 G E SOLID STATE- 01 inf| 3a7SQfll QOlVaBT b |~ 7- J J - $ 1 _ Darffngton Power Transistors File Number 1001 2N6282, 2N6283, 2N6284, 2N6285, 2N6286, 2N6287 20-Ampere Complementary N-P-N and P-N-P Monolithic Darlington Power Transistors TERMINAL DESIGNATIONS

Contextual Info: r r u _ LTC1415 r r n TECHNOLOGY 12-Bit 1.25Msps, 55m W S a m p lin g A /D C o n v e rte r F€flTUR€S DCSCRIPTIOn • ■ ■ ■ ■ The LTC 1415 is a 700ns, 1.25Msps, 12-bit sampling A/D converter that draws only 55mW from a single 5V

Contextual Info: / T U i m TECHNOLOGY LT12 1 8/LT1219 Precision Rail-to-Rail Input and Output Op Amps F€flTUR€S D€SCRICTIOn • Rail-to-Rail Input and Output ■ 90|jV Vos MAX for VCm = V-to V+ ■ High Common Mode Rejection Ratio: 97dB Min ■ C-Load Stable Version (LT1219)

km681000alt

Contextual Info: SAMSUNG EL EC T R O N I C S INC b7E D • 7^4145 KM681000AL/KM681000AL-L QÜ17SDS 70T « S r i G K CMOS SRAM 1 2 8 K X 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 55,70,85,100,120ns max. • Low Power Dissipation Standby (CMOS): 1 0/jW (typ.) L-Version

AT-30533

Contextual Info: ÏÏS S i HEWLETT mLEM P A C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30533 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance:

tsop50

Abstract: 42-PIN
Contextual Info: O K I Semiconductor MSM51V17170_ 1,048,576-Word x 16-Bit DYNAM IC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17170 is a new generation Dynamic RAM organized as 1,048,576-word x 16-bit configuration. The technology used to fabricate the MSM51V17170 is OKI's CMOS silicon gate process technology.

IC 723

Abstract: TA7366P mitsumi coil KY 719 ta7366 cd 40185 ic 731 TA7761P transistor rca 17563 l161p
Contextual Info: TOSHIBA-, ELECTRONIC DE C| [ H 7 E 4 7 □□175bl 7 | “ 02E_ 1[756 1 O_ •T -7 7 -0 5 - O T FM IF SYSTEM Unit in mm TA 7761P TA7761P/F is the IC developed as 2nd IF system for communication devices and optimum for personal radio and cordless telephone.

phase controller L120

Abstract: LH2B SFU 455 B Q0000 SFU 455 sl sfu stanly 28F008SA LH28F016SC-L 2SF008SA
Contextual Info: SHARP PRODUCT PREVIEW LH28F016SC-L 16-MBIT 2 MB x 8 SmartVoltage Flash MEMORY • SmartVoltage Technofogy — 2.7V(Read-Only), 3.3V or 5V V cc — 3.3V, 5V or 12V V PP ■ High-Performance — 95 ns Read Access Tim e ■ Enhanced Automated Suspend Options

DD1752

Abstract: 5BL41 adr9 ks09 8051 128-PIN
Contextual Info: DS80CH10/DS82CH10/DS80CL10/DS82CL10 PRELIM INARY DS80CH10/DS82CH10 DS80CL10/DS82CL10 DALLAS Green Energy Manager s e m ic o n d u c to r PRODUCT SPECIFICATION V2.2 PRELIMINARY Copyright 1995 by Dallas Semiconductor Corporation. All Rights Reserved. For important information regarding

TA7366P/F

Contextual Info: TOSHIBA-, ELECTRONIC DË Î>Ë| IDTTSH? 0D17Sbl 7 | ~ 02E 17561 O •T -7 7 -0 5 - 0 T FM IF SYSTEM Unit in mm TA7761P TA7761P/F is the IC developed as 2nd IF system for communication devices and optimum for personal radio and cordless telephone. • Double-balanced mixer

BD203-BD204

Abstract: BD201 RCA-BD201 17521 rca BD202 BD203 BD204 0017525 BD203 npn
Contextual Info: ÏÏÏ 38750816 E SOLID STATE Pro Electron Power Transistors DE~J 3 Ô 7 S 0 Û 1 G D 1 7 S B 1 □ 01E 17521 D^ - BD201, BD202, BD203, BD204 File Num ber