D RAM MEMORY IC Search Results

G025A

Contextual Info: FUJITSU S EM ICO NDUCTO R DATA SHEET D S 05 -1 0 1 5 6 -4 E MEMORY FAST PAGE MODE DYNAMIC RAM MB814260-60/-70 CMOS 262,144 x 16 BIT Fast Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB814260 is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304 memory cells

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET D S 0 5 -1 0 1 6 7 -2 E MEMORY CMOS 2 M x 8 BIT FAST PAGE MODE DYNAMIC RAM MB8117800A-60/-70 CMOS 2,097,152 x 8 BIT Fast Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB8117800A is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory

1 HP25

Abstract: WL 431 DSP56000 DSP56300 DSP56301 CCD97
Contextual Info: Technical Data DSP56301/D Rev. 7, 2/2004 24-Bit Digital Signal Processor 52 6 6 3 Memory Expansion Area Triple Timer Host Interface ESSI X Data Program RAM RAM 4096 x 24 bits 2048 × 24 bits Default (Default) SCI Y Data RAM 2048 × 24 bits (Default) Peripheral

Contextual Info: ^ E D _ EDI8F176128C I Electronic Designs Inc. 22.5M Secondary Cache Memory Array Module DiF iiMD©i 128Kx176 Asynchronous Static RAM Module with TAG, TAG ECC, and DATA ECC Features The EDI8F176128C is a single array multichip Static RAM module organized asa 131,072x176bitmemory array.

Contextual Info: F U J IT S U S E M IC O N D U C T O R D A TA S H E E T AE1E MEMORY CMOS 4 x 1 Mx 1 6 B I T SYNCHRONOUS DYNAMIC RAM MB81F641642D-75/-102/-10 CMOS 4-Bank x 1,048,576-Word x 16 Bit Synchronous Dynamic Random Access Memory DESCRIPTION The Fujitsu MB81 F641642D is a CMOS Synchronous Dynamic RandQtfi:AcG§SS Memory SDRAM containing

Contextual Info: ^EDI EDI8F32128C ELECTRONIC D ESIGNSINCl 128KX32 SR AM Module 128Kx32 Static RAM CMOS, High Speed Module Features 128Kx32 bit CMOS Static The EDI8F32128C is a high speed 4 megabit Static RAM Random Access Memory module organized as 128K words by 32 bits. This module is

transistor A4t

Abstract: transistor A4t 45 transistor A4t 35 transistor A4t 16
Contextual Info: ï éoJm RAfITRON CORP 33E D 755SD15 aGOQG71 □ FMx 1208FRAM Memory r ^ M 4,096-Bit Nonvolatile Ferroelectric RAM Engineering Evaluation Unit* T R ü N v Features • 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512w x 8b ■ CMOS Technology with Integrated Ferroelectric

MB81461B-12

Contextual Info: January 1990 Edition 2.0 DATA SHEET FUJITSU MB81461B-12/-15 262,144-BIT DUAL PORT DYNAMIC RANDOM ACCESS MEMORY 262,144 Bit D ual Port D R A M The Fujitsu MB81461B is a fully decoded, dynamic NMOS random access memory organized as 65,536 words by 4 bits dynamic RAM port and 256 words by 4

29C60

Contextual Info: Am29C60A A d v a n ce d M icro D e v ice s CM OS Cascadable 16-Bit Error Detection and Correction Unit DISTINCTIVE CHARACTERISTICS • Boosts Memory Reliability Corrects all single-bit errors. Detects all double- and some triple-bit errors. Reliability of dynamic RAM

tc528126

Abstract: TC528126B
Contextual Info: PRELIMINARY 131, 0 7 2 W O R D S x 3 B IT S M U L T IP O R T D R A M D E S C R IP T IO N The TC52812GBJ/BZ is a CMOS multiport memory equipped with a 131,072-words by 8-bits dynamic random access memory RAM port and a 256-words by 8-bits static serial access memory (SAM) port. The

Contextual Info: 5 ÖE D 7555015 D 0 Q 0 1 ÖS 51? I RAM DM2200EDRAM 'TT4tZ3-37 4Mbx1 EnhancedDynamic RAM r ^ M lR O IN I Preliminary Datasheet R A MT RO N CORP Features • 2K-bits of 15nsec SRAM Cache Memory ■ On-Chip Cache Hit/Miss Comparator ■ Refresh Counter with Dedicated Path to DRAM Array

NZ70

Abstract: TC511001 TC511001AZ adata a55 diagram 4ao5
Contextual Info: TOSHIBA -CLOGIC/MEMORY} 14E D • i-DTVEMß DOlfiTOS S ■ T -46-23-15 TOSHIBA MOS MEMORY PRODUCTS TC511001AP/AJ/AZ-70, TG511001 AP/AJ/flZ-80 TC511001AP/AJ/AZ-10 DESCRIPTION The TC511001AP/AJ/AZ is the new generation dynamic RAM organized 1,048,576 words by

L-DIM-72-3

Contextual Info: 4M x 32 -Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE HYM 32V4020G D L -50/-60 Advanced Information • 72-Pin Small Outline Dual-in-Line Memory Module • 4 194 034 words by 32-bit organization • Performance: -50 -60 Read / Write Cycle Time 90 110

Contextual Info: OKI semico n d u c t o r Preliminary M SC2350YS12_ 1,048,576 Word X 36 Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE GENERAL DESCRIPTION The Oki MSC2350YS12 is a 1,048,576 words by 36 bits dynamic Random Access Memory RAM Module which is comprised of eight pieces of the

Contextual Info: 128 Megabit CM O S D DR SDRAM DPDD16MX8RLAY5 DPDD16MX8RSW5 DENSE-PAC MICROSYSTEMS ADVANCED INFORMATION DESCRIPTION: The PL-Sack 9eries is a family of interchangeable memory devices The 128 Megabit Double Data Rate Synchronous D RAM isa member ofth isfam ilyw h ich utilizesthenew and innovative space savingTSOP

Contextual Info: m INTEGRATE» DEVICE bûE D 4Ö55771 GQlHEbb Ell • IDT PRELIMINARY IDT70V05S/L HIGH-SPEED 3.3V 8K x 8 DUAL-PORT STATIC RAM Integ rated Device Technology» Inc. FEATURES: • True Dual-Ported memory cells which allow simulta­ neous reads of the same memory location

Contextual Info: I N T E G R A T E D D E VI CE hêE D • 4 Ö E S 77 1 G 0 1 4 3 2 0 07fi ■ IDT HIGH-SPEED 3.3V 8K x 16 DUAL-PORT STATIC RAM PRELIMINARY IDT70V25S/L Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simulta­ neous reads of the same memory location

Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MCM32515/D SEMICONDUCTOR TECHNICAL DATA Advance Information Freescale Semiconductor, Inc. 512K x 32 Bit Fast Static RAM Module The MCM32515 is a 16M bit static random access memory module organized

Contextual Info: F U J IT S U S E M IC O N D U C T O R I DATA S H E E T ¡ D S 0 5 -5 0 1 1 1 -1 E MCP Multi-Chip Package FLASH MEMORY & SRAM CM O S 8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM o n ii / v , o t a t i p n a n il MB84V D2008-1o/MB84V D2009-1o • FEATURES

ds39026

Abstract: PIC16CXX PIC18C242 PIC18C252 PIC18C442 PIC18C452 PIC18CXX2 PIC16C7X CS-7 thermistor MPLAB-C18 keypad
Contextual Info: PIC18CXX2 High-Performance Microcontrollers with 10-Bit A/D High Performance RISC CPU: Device PIC18C242 * DIP, Windowed CERDIP On-Chip Program Memory On-Chip RAM EPROM # Single Word bytes (bytes) Instructions 16K 8192 512 PIC18C252 32K 16384 1536 PIC18C442

Contextual Info: Preliminary GM72V66441ET/ELT 4 , 194,304 w o r d x 4 b i t x 4 b a n k L G S e m i c o n C o « ,L td « SYNCHRONOUS DYNAMIC RAM Description The GM72V66441ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including

Contextual Info: TE X A S IN ST R -CASIC/MEMORY} ^77 i>Ë| 6 ^ 1 7 2 5 D040774 77C 4 0 7 7 4 -§361725 TEXAS 1NSTR ASIC/MEMORY D TM4256EL9, TM4256GU9. TM4257EL9, TM4257GU9 262,144 BY 9-BIT DYNAMIC RAM MODULES SEPTEMBER 1986 - REVISED NOVEMBER 1985 T M 4 2 B .E L9 . . . L SINGLE-IN-UNE PACKAGE

Contextual Info: IBM11N8645H IBM11N8735H 8M x 64/72 D RAM M O D U LE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module Optimized for byte-write non-parity, or ECC applications • 8Mx64, 8Mx72 Extended Data Out Page Mode DIMMs System Performance Benefits:

Contextual Info: DS1613C DALLAS SEMICONDUCTOR D S1613C Partitionable 256K SmartSocket FEATURES PIN ASSIGNMENT • Accepts standard 32K x 8, CMOS static RAMs • Embedded lithium energy cell retains RAM data • Unconditionally write protects all of memory when V qc is out of tolerance