D MARKING CODE DPAK TRANSISTOR Search Results

D408

Abstract: D408 transistor d408 be transistor d408 diode d408 TRANSISTOR aoD408 AOD408L
Contextual Info: AOD408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD408 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOD408 is Pbfree (meets ROHS & Sony 259 specifications).

d436

Abstract: d436 transistor transistor d436
Contextual Info: AOD436 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD436 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.

J-STD-020D

Abstract: MJD340
Contextual Info: MJD340 HIGH VOLTAGE NPN SURFACE MOUNT TRANSISTOR NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction High Collector-EmitterVoltage Ideally Suited for Automated Assembly Processes

J-STD-020D

Abstract: MJD350
Contextual Info: MJD350 HIGH VOLTAGE PNP SURFACE MOUNT TRANSISTOR NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction High Collector-EmitterVoltage Ideally Suited for Automated Assembly Processes

J-STD-020D

Contextual Info: 2DB1184Q PNP SURFACE MOUNT TRANSISTOR NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage Ideally Suited for Automated Assembly Processes

1N60C

Abstract: FAIRCHILD FQD DPAK DPAK-2 PACKAGE PSPICE Orcad 1n60 FQD1N60CTM
Contextual Info: FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 600V C C C IC = 10A, TC = 100°C G tsc > 5µs, Tjmax = 175°C E VCE on typ. = 1.7V @ 6A n-channel Applications • Appliance Drives • Inverters

J-STD-020D

Abstract: MJD31C
Contextual Info: MJD31C NPN SURFACE MOUNT TRANSISTOR NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction High Collector-EmitterVoltage Ideally Suited for Automated Assembly Processes

3n40

Contextual Info: TM UniFET FDD3N40 / FDU3N40 400V N-Channel MOSFET Features Description • 2A, 400V, RDS on = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

MJD32C-13

Abstract: d marking code dpak transistor J-STD-020D MJD32C
Contextual Info: MJD32C PNP SURFACE MOUNT TRANSISTOR NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction High Collector-EmitterVoltage Ideally Suited for Automated Assembly Processes

TRANSISTOR D412

Abstract: D412 transistor d412 DPAK d412 omega D412 d-pak AOD412 JEDEC TO-252 LAND PATTERN alpha omega D412 D412 AOD412 30V 85A
Contextual Info: July 2003 AOD412 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD412 uses advanced trench technology to provide excellent RDS ON , low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.

transistor d404

Abstract: D404 transistor d404 JEDEC TO-252 transistor datasheet d404 AOD404 alpha omega aos Lot Code Week D404 BE
Contextual Info: July 2003 AOD404 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD404 uses advanced trench technology to provide excellent RDS ON , low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.

d414

Abstract: d414 transistor transistor d414 D-414 alpha omega D414 TRANSISTOR AOD414 AOD414
Contextual Info: July 2003 AOD414 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD414 uses advanced trench technology to provide excellent RDS ON , shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core

mje3055 127 case data

Abstract: MJD2955T4 MJE3055 369D MJD2955 MJD2955G MJD2955T4G MJD3055 MJE2955 MJD3055G
Contextual Info: MJD2955 PNP MJD3055 (NPN) Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • •

Contextual Info: IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C C IC = 7.0A, TC =100°C E G tSC 5µs, TJ max = 175°C C G G E VCE(ON) typ. = 1.75V @ IC = 4.0A n-channel Applications

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN DARLINGTON PLASTIC POWER TRANSISTOR MJD44E3 DPAK TO-252 Plastic Package For General Purpose Power and Switching Output or Driver Stages in Applications such as

ignition IGBT

Abstract: ngb15n41 aac marking NGB15N41CLT4
Contextual Info: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N−Channel DPAK, D2PAK and TO−220 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V This Logic Level Insulated Gate Bipolar Transistor (IGBT) features

mjd44h11g

Abstract: dc marking code dpak d marking code dpak transistor data base dpak 369D MJD44H11 MJD44H11RL MJD44H11RLG MJD45H11 MJD45H11-001G
Contextual Info: MJD44H11 NPN MJD45H11 (PNP) Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.

MJD122

Abstract: JESD97 MJD122-1 MJD122T4 MJD127
Contextual Info: MJD122 Low voltage power Darlington transistor Features • Low base drive requirements ■ Integrated antiparallel collector-emitter diode ■ Through hole TO-251 IPAK power package in tube (suffix “-1”) ■ Surface mounting TO-252 (DPAK) power package in tape & reel (suffix “T4”)

MJD340G

Abstract: MJD340T4G dpak code NPN Silicon Power Transistor DPAK Silicon Power Transistor DPAK MJD350 MJD350t4g NPN Silicon Power Transistor DPAK mjd340 power transistor audio amplifier 500 watts d marking code dpak transistor data base dpak
Contextual Info: MJD340 NPN MJD350 (PNP) Preferred Device High Voltage Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS MJD112 NPN MJD117 PNP DPAK TO-252 Plastic Package Designed for General Purpose Power and Switching Applications

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company CJD110 NPN CJD115 PNP COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS DPAK TO-252 Plastic Package Designed for General Purpose Power and Switching such as Output or Driver stages in Applications such as Switching

dpak 369C

Abstract: mjd44h11g 369D MJD44H11 MJD44H11RL MJD44H11RLG MJD45H11 MJD45H11 rev
Contextual Info: MJD44H11 NPN MJD45H11 (PNP) Preferred Device Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters,