D MARKING CODE DPAK TRANSISTOR Search Results

D408

Abstract: D408 transistor d408 be transistor d408 diode d408 TRANSISTOR aoD408 AOD408L
Contextual Info: AOD408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD408 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOD408 is Pbfree (meets ROHS & Sony 259 specifications).

d marking code dpak transistor

Contextual Info: Central" CJD41C NPN CJD42C PNP semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD41C, CJD42C types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface mount package

CJD3055

Abstract: d marking code dpak transistor PNP Silicon Power Transistor DPAK
Contextual Info: Central CJD2955 NPN CJD3055 PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD2955, CJD3055 types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface mount pack­

transistor j 127

Abstract: d marking code dpak transistor TRANSISTOR 841 transistor A 673 transistor 30 j 127 TRansistor A 950 Transistor marking code K DPAK marking code 300 Transistor 0235 D
Contextual Info: Central" CJD340 NPN CJD350 PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD340, CJD350 types are Complementary Silicon Power Transistors manufactured in a surface mount package designed for high voltage general pur­

d marking code dpak transistor

Abstract: LB 127 transistor
Contextual Info: Central" CJD200 NPN CJD210 PNP semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL S EM IC O N D U C TO R CJD200, CJD210 types are Complementary Silicon Power Transistors manufactured in a surface mount package designed for high current amplifier appli­

C 828 Transistor

Abstract: B 828 transistor transistor c 828 transistor 828 d marking code dpak transistor C 828 Transistor NPN LC marking code transistor
Contextual Info: Central CJD44H11 NPN CJD45H11 PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD44H11, CJD45H11 types are Complementary Silicon Power Transistors manufactured in a surface mount package designed for switching and power

Transistor D 799

Abstract: Transistor K 799 d marking code dpak transistor transistor j 127
Contextual Info: Central" CJD47 CJD50 Semiconductor Corp. NPN SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEM IC O N D U C TO R CJD47, CJD50 types are NPN Silicon Power Transistors manufactured in a surface mount package designed for high voltage applications such as

lb1500ma

Abstract: d marking code dpak transistor LC marking code transistor
Contextual Info: Central" CJD44H11 NPN CJD45H11 PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEM ICONDUCTOR CJD44H11, CJD45H11 types are Complementary Silicon Power Transistors manufactured in a surface mount package designed for switching and power

CJD3055

Contextual Info: Central" CJD2955 NPN CJD3055 PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD2955, CJD3055 types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface mount pack­

transistor marking code AL

Abstract: TRANSISTOR marking code 432 AL 102 pnp transistor A 673 transistor DPAK marking code 300
Contextual Info: Central" CJD340 NPN CJD350 PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD340, CJD350 types are Complementary Silicon Power Transistors manufactured in a surface mount package designed for high voltage general pur­

d436

Abstract: d436 transistor transistor d436
Contextual Info: AOD436 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD436 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.

d marking code dpak transistor

Abstract: 147 B transistor
Contextual Info: Central" CJD122 NPN CJD127 PNP semiconductor Corp. COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL S EM IC O N D U C TO R CJD122, CJD127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low speed switching

d marking code dpak transistor

Contextual Info: Centrar CJD47 CJD50 Semiconductor Corp. NPN SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD47, CJD50 types are NPN Silicon Power Transistors manufactured in a surface mount package designed for high voltage applications such as power supplies and other switching applications.

J-STD-020D

Abstract: MJD340
Contextual Info: MJD340 HIGH VOLTAGE NPN SURFACE MOUNT TRANSISTOR NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction High Collector-EmitterVoltage Ideally Suited for Automated Assembly Processes

transistor k 826

Abstract: TRANSISTOR marking code 432
Contextual Info: Central CJD41CNPN CJD42C PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DPÀK1! DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD41C, CJD42C types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface mount package

Contextual Info: MJD350 N EW PRODU CT HIGH VOLTAGE PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction High Collector-EmitterVoltage Ideally Suited for Automated Assembly Processes Ideal for Power Switching or Amplification Applications

transistor c 144

Abstract: transistor tc 144
Contextual Info: Central CJD112 NPN CJD117 PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD112, CJD117 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low speed switching

Contextual Info: Central CJD13003 Semiconductor Corp. NPN SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEM ICONDUCTOR CJD13003 type is an NPN Silicon Power Transistor manu­ factured in a surface mount package designed for high voltage, high speed power switching induc­

TRANSISTOR C 608

Contextual Info: Central" CJD31C NPN CJD32C PNP Sem iconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEM IC O N DU CTO R CJD31C, CJD32C types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface mount package

J-STD-020D

Abstract: MJD350
Contextual Info: MJD350 HIGH VOLTAGE PNP SURFACE MOUNT TRANSISTOR NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction High Collector-EmitterVoltage Ideally Suited for Automated Assembly Processes

J-STD-020D

Contextual Info: 2DB1184Q PNP SURFACE MOUNT TRANSISTOR NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage Ideally Suited for Automated Assembly Processes

cq 622

Abstract: CP314
Contextual Info: Central" CJD200 NPN CJD210PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD200, CJD210 types are Complementary Silicon Power Transistors manufactured in a surface mount package designed for high current amplifier appli­

marking code nt amplifier

Abstract: D 823 transistor
Contextual Info: Central" CJD31C NPN CJD32C PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DRÂKI! DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD31C, CJD32C types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface mount package

1N60C

Abstract: FAIRCHILD FQD DPAK DPAK-2 PACKAGE PSPICE Orcad 1n60 FQD1N60CTM
Contextual Info: FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to