DS31625 Search Results

Contextual Info: MJD31C 100V NPN HIGH VOLTAGE TRANSISTOR IN TO252 Features Mechanical Data •          BVCEO > 100V IC = 3A high Continuous Collector Current ICM = 5A Peak Pulse Current Ideal for Power Switching or Amplification Applications Complementary PNP Type: MJD32C

Contextual Info: MJD31C 100V HIGH VOLTAGE NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • • Epitaxial Planar Die Construction High Collector-Emitter Voltage BVCEO > 100V Ideally Suited for Automated Assembly Processes Ideal for Power Switching or Amplification Applications

Contextual Info: MJD31C N EW PRODU CT NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction High Collector-EmitterVoltage Ideally Suited for Automated Assembly Processes Ideal for Power Switching or Amplification Applications

J-STD-020D

Abstract: MJD31C
Contextual Info: MJD31C NPN SURFACE MOUNT TRANSISTOR NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction High Collector-EmitterVoltage Ideally Suited for Automated Assembly Processes

MJD31C

Abstract: DPAK MJD31C-13
Contextual Info: MJD31C NEW PRODUCT NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction High Collector-EmitterVoltage Ideally Suited for Automated Assembly Processes Ideal for Power Switching or Amplification Applications