AOD412 Search Results

TRANSISTOR D412

Abstract: D412 transistor d412 DPAK d412 omega D412 d-pak AOD412 JEDEC TO-252 LAND PATTERN alpha omega D412 D412 AOD412 30V 85A
Contextual Info: July 2003 AOD412 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD412 uses advanced trench technology to provide excellent RDS ON , low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.

AOD412

Abstract: AOD4128
Contextual Info: AOD4128 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4128 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in

Contextual Info: AOD4126/AOI4126 100V N-Channel MOSFET SDMOS TM General Description Product Summary The AOD4126&AOI4126 are fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is

Contextual Info: AOD4120 N-Channel Enhancement Mode Field Effect Transistor 1.4 General Description Features The AOD4120 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.

AOD4126

Abstract: AOI4126 aod412
Contextual Info: AOD4126/AOI4126 100V N-Channel MOSFET SDMOS TM General Description Product Summary The AOD4126&AOI4126 are fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is

ao412

Abstract: ao41
Contextual Info: AOD4120 N-Channel Enhancement Mode Field Effect Transistor 1.4 General Description Features The AOD4120/L uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose

AOD4128

Abstract: 304 pd
Contextual Info: AOD4128 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4128 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in

AOD412

Abstract: aoD412 transistor TRANSISTOR AOD412 AOD412L b100Current
Contextual Info: AOD412 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD412 uses advanced trench technology to provide excellent RDS ON , low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.

AOD4120L

Abstract: AOD4120
Contextual Info: AOD4120 N-Channel Enhancement Mode Field Effect Transistor 1.4 General Description Features The AOD4120 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard

3V02

Abstract: aod41
Contextual Info: AOD4122 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4122 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.

AOD4126

Abstract: AOI4126
Contextual Info: AOD4126/AOI4126 100V N-Channel MOSFET TM SDMOS General Description Product Summary The AOD4126&AOI4126 are fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is

Contextual Info: Rev 2: June 2004 AOD412, AOD412L Green Product N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD412 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use

Contextual Info: AOD4126/AOI4126 100V N-Channel MOSFET SDMOS TM General Description Product Summary The AOD4126&AOI4126 are fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is

Contextual Info: AOD4128 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4128 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in

Contextual Info: AOD4124 100V N-Channel MOSFET TM SDMOS General Description Product Summary The AOD4124 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal

aoD412 transistor

Contextual Info: AOD412 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD412 uses advanced trench technology to provide excellent RDS ON , low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.

AOD4120

Contextual Info: AOD4120 N-Channel Enhancement Mode Field Effect Transistor 1.4 General Description Features The AOD4120 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.

AON6704L

Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
Contextual Info: Selector Guide Q4 2009 United states CALIFORNIA 495 Mercury Drive Sunnyvale, CA 94085 Phone: +1 408 830-9742 Fax: +1 (408) 830-9749 TEXAS 4845 Briar Creek Dr. Flower Mound, TX 75028 Phone: +1 (972) 691-1085 Fax: +1 (972) 691-1086 CHINA Rm F, 24/F Shenzhen Special Zone Press Tower

AO4946

Abstract: AOZ1242 AO4407A AOZ1242AI AO7408 AO3460 AO4936 AOZ1212AI AOD484 ao4466
Contextual Info: ALPHA & OMEGA SEMICONDUCTOR Selector Guide Q2/Q3 2008 www.aosmd.com Technology. Innovation. Powering the Future. TABLE OF CONTENTS Corporate Overview Mosfets Power ICs Transient Voltage Suppressors TVS Package Types www.aosmd.com PAGE 2 PAGE 3 - 18 PAGE 19 - 22