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    ABB Group AO4-12

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    Abstract: ao41
    Contextual Info: AOD4120 N-Channel Enhancement Mode Field Effect Transistor 1.4 General Description Features The AOD4120/L uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose


    Original     		AOD4120 AOD4120/L AOD4120L -AO4120L O-252 ao412 ao41 PDF