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    19ABCDEF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 1 1 234567481 19ABCDEF1BE11711 1 A !" #$%1 "& DEB'EB*D1,1*B B(B1+-1 1 .B/1D(1E1-7011901 


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    19abcdef1d123456748112344356743895a86bcdefd234435343895a8 PDF

    Contextual Info: 123456778 19ABCDEFEAEEE5CFADE541 123456789A6BC3DEF7989A6 E 33 BF 3 A8 3 7B66EC 3 B6 3 7B66EC 3 A5858 3 9EF 3 B 3 57! 3 B6 3 C96EB3 E"5CB8A 3 B6 3 8#A 3 $F2 3 %8 3 9F 3 9"C& 3 F598BCE 3 BF 3 B 3 F5C& 3 B6 3 A5858 3 F8B"E 3 'A 3 B6&3


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    19abcdef123456789a6bc3def7b66ecc96eb+5f598bc97b89a6f3f573968e234eb853c96eb PDF

    Contextual Info: AOD4126/AOI4126 100V N-Channel MOSFET SDMOS TM General Description Product Summary The AOD4126&AOI4126 are fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is


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    aod4126/aoi4126aod4126aoi412619abcdef+1o-251a PDF

    Contextual Info: AOD488 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD488 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.


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    aod48819abcdef PDF

    Contextual Info: AOD2610 60V N-Channel MOSFET General Description Product Summary The AOD2610 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of


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    aod261019abcdef PDF

    Contextual Info: AOD484 30V N-Channel MOSFET General Description Features The AOD484 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. VDS (V) = 30V


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    aod48419abcdef PDF

    Contextual Info: AOD413A 40V P-Channel MOSFET General Description Features The AOD413A uses advanced trench technology and design to provide excellent RDS ON with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high


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    aod413a19abcdef PDF

    Contextual Info: AOD474B 75V N-Channel MOSFET General Description Product Summary The AOD474B combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for boost converters and synchronous rectifiers for consumer,


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    aod474b19abcdef PDF

    Contextual Info: AOD2910 100V N-Channel MOSFET General Description Product Summary The AOD2910 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an


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    aod291019abcdef PDF

    Contextual Info: AOD2816 80V N-Channel MOSFET General Description Product Summary The AOD2816 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely


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    aod281619abcdef PDF

    Contextual Info: AOD498 100V N-Channel MOSFET General Description Product Summary The AOD498 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for boost converters and synchronous rectifiers for consumer,


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    aod49819abcdef PDF

    Contextual Info: AOD2810 80V N-Channel MOSFET General Description Product Summary The AOD2810 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely


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    aod281019abcdef PDF

    AOD4454

    Contextual Info: AOD4454 150V N-Channel MOSFET General Description Product Summary The AOD4454 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON .This device is ideal for boost converters and synchronous rectifiers for consumer,


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    aod445419abcdef PDF

    Contextual Info: AOD403/AOI403 30V P-Channel MOSFET General Description Product Summary The AOD403/AOI403 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high


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    aod403/aoi40319abcdefo251a PDF

    Contextual Info: AOD496A 30V N-Channel MOSFET General Description Product Summary The AOD496A uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. VDS ID (at VGS=10V)


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    aod496a19abcdef PDF

    Contextual Info: AOD200 30V N-Channel MOSFET General Description Product Summary The AOD200 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of


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    aod20019abcdef PDF

    Contextual Info: AOD474 75V N-Channel MOSFET General Description Product Summary The AOD474 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for boost converters and synchronous rectifiers for consumer,


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    aod47419abcdef PDF

    Contextual Info: AOD2210 200V N-Channel MOSFET General Description Product Summary The AOD2210 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an


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    aod221019abcdef PDF

    Contextual Info: AOD424 20V N-Channel MOSFET General Description Product Summary The AOD424 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.


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    aod42419abcdef PDF

    Contextual Info: AOD450 200V N-Channel MOSFET General Description Product Summary The AOD450 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in inverter, load switching and general purpose applications.


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    aod45019abcdef PDF

    Contextual Info: AOD454A N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD454A uses advanced trench technology and design to provide excellent RDS ON with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high


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    aod454a19abcdef PDF

    63D12

    Contextual Info: 1 111111111111111 1111111 1 111111111111111 1 111111111111111 1 111111111111111 1 1 123456789AB1CDEDFD1C111 11111111 11 11111111 1 11111 1 1 D12F 123314567891A758BCD814E1F3D167D1F1C5A36 DE1EDD1 77! "#$%&' 1 77!1*+,2-.1+C1FF1$%&1DDEDC


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    23456789ab1cdedf123314567891a758bcd814e1f3167d123456789ab18d+7631a75cd996e14d1c75c57553d7d18d991469d81563d12 PDF

    Contextual Info: AOD425 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD425 uses advanced trench technology to provide excellent RDS ON and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is


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    aod42519abcdef PDF

    Contextual Info: AOD2606 60V N-Channel MOSFET General Description Product Summary The AOD2606 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely


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    aod260619abcdef PDF