19ABCDEF Search Results
19ABCDEF Datasheets Context Search
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Contextual Info: 1 1 234567481 19ABCDEF1BE11711 1 A !" #$%1 "& DEB'EB*D1,1*B B(B1+-1 1 .B/1D(1E1-7011901 |
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Contextual Info: 123456778 19ABCDEFEAEEE5CFADE541 123456789A6BC3DEF7989A6 E 33 BF 3 A8 3 7B66EC 3 B6 3 7B66EC 3 A5858 3 9EF 3 B 3 57! 3 B6 3 C96EB3 E"5CB8A 3 B6 3 8#A 3 $F2 3 %8 3 9F 3 9"C& 3 F598BCE 3 BF 3 B 3 F5C& 3 B6 3 A5858 3 F8B"E 3 'A 3 B6&3 |
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Contextual Info: AOD4126/AOI4126 100V N-Channel MOSFET SDMOS TM General Description Product Summary The AOD4126&AOI4126 are fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is |
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Contextual Info: AOD488 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD488 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. |
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Contextual Info: AOD2610 60V N-Channel MOSFET General Description Product Summary The AOD2610 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of |
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Contextual Info: AOD484 30V N-Channel MOSFET General Description Features The AOD484 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. VDS (V) = 30V |
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Contextual Info: AOD413A 40V P-Channel MOSFET General Description Features The AOD413A uses advanced trench technology and design to provide excellent RDS ON with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high |
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Contextual Info: AOD474B 75V N-Channel MOSFET General Description Product Summary The AOD474B combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for boost converters and synchronous rectifiers for consumer, |
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Contextual Info: AOD2910 100V N-Channel MOSFET General Description Product Summary The AOD2910 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an |
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Contextual Info: AOD2816 80V N-Channel MOSFET General Description Product Summary The AOD2816 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely |
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Contextual Info: AOD498 100V N-Channel MOSFET General Description Product Summary The AOD498 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for boost converters and synchronous rectifiers for consumer, |
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Contextual Info: AOD2810 80V N-Channel MOSFET General Description Product Summary The AOD2810 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely |
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AOD4454Contextual Info: AOD4454 150V N-Channel MOSFET General Description Product Summary The AOD4454 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON .This device is ideal for boost converters and synchronous rectifiers for consumer, |
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Contextual Info: AOD403/AOI403 30V P-Channel MOSFET General Description Product Summary The AOD403/AOI403 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high |
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Contextual Info: AOD496A 30V N-Channel MOSFET General Description Product Summary The AOD496A uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. VDS ID (at VGS=10V) |
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Contextual Info: AOD200 30V N-Channel MOSFET General Description Product Summary The AOD200 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of |
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Contextual Info: AOD474 75V N-Channel MOSFET General Description Product Summary The AOD474 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for boost converters and synchronous rectifiers for consumer, |
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Contextual Info: AOD2210 200V N-Channel MOSFET General Description Product Summary The AOD2210 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an |
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Contextual Info: AOD424 20V N-Channel MOSFET General Description Product Summary The AOD424 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications. |
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Contextual Info: AOD450 200V N-Channel MOSFET General Description Product Summary The AOD450 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in inverter, load switching and general purpose applications. |
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Contextual Info: AOD454A N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD454A uses advanced trench technology and design to provide excellent RDS ON with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high |
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63D12Contextual Info: 1 111111111111111 1111111 1 111111111111111 1 111111111111111 1 111111111111111 1 1 123456789AB1CDEDFD1C111 11111111 11 11111111 1 11111 1 1 D12F 123314567891A758BCD814E1F3D167D1F1C5A36 DE1EDD1 77! "#$%&' 1 77!1*+,2-.1+C1FF1$%&1DDEDC |
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Contextual Info: AOD425 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD425 uses advanced trench technology to provide excellent RDS ON and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is |
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Contextual Info: AOD2606 60V N-Channel MOSFET General Description Product Summary The AOD2606 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely |
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