D 400 TRANSISTOR DATA Search Results

Contextual Info: MOTOROLA Order this document by MJ10023/D SEMICONDUCTOR TECHNICAL DATA M J10023 D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor w ith B ase-E m itter Speedup Diode 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTOR 400 VOLTS

mj6503 motorola

Abstract: MJ6503 mj6503 transistor MJ6502 MARK B3L MJ-6503
Contextual Info: MOTOROLA SC X S TR S /R F 1 SE D I b 3b ? 2 S4 QQÖMTÖS 2 | MOTOROLA SEMICONDUCTOR MJ6503 TECHNICAL DATA D e siS’ruM's D ata Sheet 8 AM PERE PNP SIUCON POWER TRANSISTOR SWITCHMODE SERIES PNP SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The MJ6503 transistor is designed for high-voltage, high-speed,

J423

Contextual Info: MOTOROLA Order this document by MJ423/D SEMICONDUCTOR TECHNICAL DATA M J423 H igh-V oltage NPN Silicon Transistor 10 AMPERE POWER TRANSISTOR NPN SILICON 400 VOLTS 125 WATTS . . . designed for m e d iu m -to -h ig h voltage inverters, converters, regulators and

Motorola AN222A

Abstract: MJ10023 1N4937 sps transistor
Contextual Info: MOTOROLA Order this document by MJ10023/D SEMICONDUCTOR TECHNICAL DATA MJ10023  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode Designer's 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTOR 400 VOLTS 250 WATTS

MJ423

Abstract: mj423 motorola MOTOROLA TRANSISTOR
Contextual Info: MOTOROLA Order this document by MJ423/D SEMICONDUCTOR TECHNICAL DATA MJ423 High-Voltage NPN Silicon Transistor 10 AMPERE POWER TRANSISTOR NPN SILICON 400 VOLTS 125 WATTS . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits.

EM- 546 motor

Abstract: 2N6545 2N6545 Motorola 2N6544
Contextual Info: MOTOROLA SC XSTRS/R F 12E D | b3b72S4 QQflMbbt Ö | T - S 3 - /3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a ta , S lie e t 8 AM PERE NPN SILICON POWER TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The 2N6545 transistor is designed for high-voltage, high-speed,

ferroxcube 56-590-65

Abstract: UT25 coaxial 2N6439 UT25 VK200
Contextual Info: Order this document by 2N6439/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 2N6439 . . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc

Contextual Info: MOTOROLA SC XSTRS/R F 4bE D I • b3b?2SH QGISbbO 3 ■ M O T b 7 :^/-/5' MOTOROLA SEMICONDUCTOR TECHNICAL DATA ÙM0 PRELIMINARY DATA mini MRFS5109HXV/HS Discrete Military Operation PROCESSED TO MIL-S-19500/453 SURFACE MOUNTABLE R.F. TRANSISTOR 400 VOLT, 400 MILLIAMPERE BIPOLAR NPN

MMBTA517

Abstract: Transistor E
Contextual Info: SEMICONDUCTOR MMBTA517 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. E B L D L SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 10 V IC 400 mA PC *

2n6439

Abstract: UT25 VK200 Ferox
Contextual Info: MOTOROLA Order this document by 2N6439/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 2N6439 . . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc

k 3683 transistor

Abstract: MJ-13080
Contextual Info: MOTOROLA SC 15E D I fc3b75S4 0005127 S | XSTRS/R F MOTOROLA Ml13080 SEMICONDUCTOR TECHNICAL DATA D esig n er’s D ata S h eet 8 AMPERE NPN SILICON POWER TRANSISTOR SWITCHMODE II SERIES NPN SILICON POWER TRANSISTOR 400 VOLTS 150 WATTS The MJ13080 tra n sisto r is designed fo r high -vo ltag e , high-speed,

2N6439

Contextual Info: MOTOROLA O rder this docum ent by 2N6439/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor 2N6439 . . . designed primarily for wideband large-signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc

MJ13333

Abstract: MJ13330 1N4934 1N4937 MJ13331 MJE200 MJE210
Contextual Info: MOTOROLA Order this document by MJ13333/D SEMICONDUCTOR TECHNICAL DATA Designer's MJ13333  Data Sheet SWITCHMODE Series NPN Silicon Power Transistor 20 AMPERE NPN SILICON POWER TRANSISTORS 400–500 VOLTS 175 WATTS The MJ13333 transistor is designed for high voltage, high–speed, power switching

ms 7254 ver 1.1

Abstract: ms 7254 ver 3.0 T557
Contextual Info: MOTOR O L A SC I 12E D I L3b75S4 QOflSMll 2 XSTRS/R F I 7 " -3 3 7 3 MOTOROLA SEMICONDUCTOR MJE13070 TECHNICAL DATA D e s i g n e r ’s D a t a S h e e t 5 AMPERE NPN SILICON POWER TRANSISTOR SWITCHMODE II SERIES NPN SILICON POWER TRANSISTOR 400 VOLTS 80 WATTS

transistor LT 028

Abstract: LT 74 s
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line lc = - 400 mA RF POWER TRANSISTOR PNP SILICON PNP SILICON RF POWER TRANSISTOR . . . d esigned for am plifier, frequency m ultiplier or o scillator a p p li­ cations in m ilitary and industrial equipm ent. Suitable for use as

SILICON TRANSISTOR CORP

Contextual Info: SILICON TRANSISTOR CORP fl2S4D22 □□□□‘ìflb <^3 « S T C 5bE D T -3 W S SILICON TRANSISTOR CORPORATION Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 FAX: 508-250-1046 A POWERHOUSE 400 Volts 0.9 Ohms TECHNICAL DATA SHEET ABSOLUTE MAXIMUM RATINGS

transistor IRF730

Abstract: IRF730 PHP3N50 PHP3N60 PHP5N40
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Avalanche energy rated IRF730 FEATURES SYMBOL QUICK REFERENCE DATA • Repetitive Avalanche Rated • Fast switching • High thermal cycling performance • Low thermal resistance d VDSS = 400 V

SILICON TRANSISTOR CORP

Abstract: h a 431 transistor
Contextual Info: SILICON TRANSISTOR CORP SbE J • 8 as „ü52 0 0 D 0 , „ 01Q M S T C SILICON TRANSISTOR CORPORATION { Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 fax: 508-250-1046 . A POWERHOUSE 400 Volts 0.4 Ohms TECHNICAL DATA SHEET ABSOLUTE MAXIMUM RATINGS

STP4N40FI

Abstract: SKs TRANSISTOR STP4N
Contextual Info: SGS-THOMSON iyH£ïï^ sKS STP4N40 STP4N40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss STP4N40 STP4N40FI 400 400 V V R D S (o n Id 2.1 S2 2.1 LI 4 A 3 A . • . . AVALANCHE RUG G EDN ESS TECHNOLO GY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

Contextual Info: SEMICONDUCTOR MMBTA44 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES ・High Breakdown Voltage. ・Collector Power Dissipation : PC=350mW. E B L D L H UNIT Collector-BaseVoltage VCBO 450 V Collector-EmitterVoltage VCEO 400

Contextual Info: N AMER PHILIPS/DISCRETE 86D 0 1 122 OLE D D • LLS3131 Q0133L0 7 T '3 'i- /J BLU50 V.H.F./U.H.F. PUSH-PULL POWER TRANSISTOR N-P-N silicon planar epitaxial push-pull transistor designed for use in military and professional wideband applications in the 30 to 400 MHz range.

MRF325

Abstract: BH rn transistor
Contextual Info: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MRF325 T h e R F L in e 30 W - 225-400 MHz CONTROLLED "Q " BROADBAND RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR . . . designed p rim a rily fo r w ideband large-signal o u tp u t and d riv e r NPN SILICON

730c-04

Abstract: MOC8204 MOC8205 MOC8206 OPTO MOC8204
Contextual Info: MOTOROLA Order this document by MOC8204/D SEMICONDUCTOR TECHNICAL DATA MOC8204* [CTR = 20% Min] GlobalOptoisolator MOC8205 6-Pin DIP Optoisolators High Voltage Transistor Output 400 Volts [CTR = 10% Min] MOC8206 [CTR = 5% Min] *Motorola Preferred Device

transistor motorola 359

Abstract: Triode 805 AN721 808 power Triode Beckman Industrial zener motorola 1N5925A AN215A MRF134
Contextual Info: MOTOROLA Order this document by MRF134/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF134 N–Channel Enhancement–Mode . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range.