D 400 TRANSISTOR DATA Search Results

EM- 546 motor

Abstract: 2N6545 2N6545 Motorola 2N6544
Contextual Info: MOTOROLA SC XSTRS/R F 12E D | b3b72S4 QQflMbbt Ö | T - S 3 - /3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a ta , S lie e t 8 AM PERE NPN SILICON POWER TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The 2N6545 transistor is designed for high-voltage, high-speed,

ferroxcube 56-590-65

Abstract: UT25 coaxial 2N6439 UT25 VK200
Contextual Info: Order this document by 2N6439/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 2N6439 . . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc

MMBTA517

Abstract: Transistor E
Contextual Info: SEMICONDUCTOR MMBTA517 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. E B L D L SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 10 V IC 400 mA PC *

2n6439

Abstract: UT25 VK200 Ferox
Contextual Info: MOTOROLA Order this document by 2N6439/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 2N6439 . . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc

MJ13333

Abstract: MJ13330 1N4934 1N4937 MJ13331 MJE200 MJE210
Contextual Info: MOTOROLA Order this document by MJ13333/D SEMICONDUCTOR TECHNICAL DATA Designer's MJ13333  Data Sheet SWITCHMODE Series NPN Silicon Power Transistor 20 AMPERE NPN SILICON POWER TRANSISTORS 400–500 VOLTS 175 WATTS The MJ13333 transistor is designed for high voltage, high–speed, power switching

Contextual Info: N AMER PHILIPS/DISCRETE 86D 0 1 122 OLE D D • LLS3131 Q0133L0 7 T '3 'i- /J BLU50 V.H.F./U.H.F. PUSH-PULL POWER TRANSISTOR N-P-N silicon planar epitaxial push-pull transistor designed for use in military and professional wideband applications in the 30 to 400 MHz range.

730c-04

Abstract: MOC8204 MOC8205 MOC8206 OPTO MOC8204
Contextual Info: MOTOROLA Order this document by MOC8204/D SEMICONDUCTOR TECHNICAL DATA MOC8204* [CTR = 20% Min] GlobalOptoisolator MOC8205 6-Pin DIP Optoisolators High Voltage Transistor Output 400 Volts [CTR = 10% Min] MOC8206 [CTR = 5% Min] *Motorola Preferred Device

transistor motorola 359

Abstract: Triode 805 AN721 808 power Triode Beckman Industrial zener motorola 1N5925A AN215A MRF134
Contextual Info: MOTOROLA Order this document by MRF134/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF134 N–Channel Enhancement–Mode . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range.

KTC4074F

Contextual Info: SEMICONDUCTOR KTC4074F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E ・Excellent hFE Linearity B : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE : hFE=120~400. D 3 K ・Thin Fine Pitch Small Package.

Contextual Info: MOTOROLA Order this document by MTW16N40E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTW 16N40E TMOS E-FET ™ Power Field Effect Transistor T O -2 4 7 w ith Isolated Mounting Hole Motorola Preferred Device TMOS POWER FET 16 AMPERES 400 VOLTS

MPS3866

Abstract: mrf3866r2
Contextual Info: MOTOROLA Order this document by MRF3866/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF3866R2 • Tape and reel packaging available for MRF3866R2: R2 suffix = 2,500 units per reel IC = 400 mA HIGH–FREQUENCY TRANSISTORS

VK200 FERRITE

Abstract: VK200-20/4B vk200 vk200 ferrite bead MRF313 RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ vk200-20 FERROXCUBE VK200 CASE 305A-01 vk200* FERROXCUBE
Contextual Info: Order this document by MRF313/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF313 . . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. • Specified 28 Volt, 400 MHz Characteristics —

MPS3866

Abstract: MRF3866R2
Contextual Info: MOTOROLA Order this document by MPS3866/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MPS3866 MRF3866R2 • Tape and reel packaging options available for MRF3866R2: R2 suffix = 2,500 units per reel IC = 400 mA HIGH–FREQUENCY

MRF313

Abstract: vk200 5Bp power BALLAST MOTOROLA
Contextual Info: MOTOROLA Order this document by MRF313/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF313 . . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. • Specified 28 Volt, 400 MHz Characteristics —

MRF158

Abstract: MRF158R Motorola transistors MRF158 zener motorola 1N5925A VK200 arco TRIMMER capacitor Microstrip Line
Contextual Info: MOTOROLA Order this document by MRF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 400 MHz Performance

Contextual Info: MOTOROLA Order this document by MRF327/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF327 . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc

NT 407 F TRANSISTOR TO 220

Abstract: MOTOROLA TRANSISTOR T2 NT 407 F MOSFET TRANSISTOR MGP20N40CL 632 transistor motorola mosfet ignition coil NT 407 F TRANSISTOR
Contextual Info: MOTOROLA Order this document by MGP20N40CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MGP20N40CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT VCE on = 1.8 VOLTS 400 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)

Johanson Piston Trimmer

Abstract: J154 J329 J253 vk200 erie redcap capacitors MRF327 NPN RF Amplifier
Contextual Info: Order this document by MRF327/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF327 . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc

MGP20N40CL

Abstract: NT 407 F TRANSISTOR TO 220 MGP20N40CL-D
Contextual Info: MOTOROLA Order this document by MGP20N40CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MGP20N40CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce on = 1.8 VOLTS 400 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)

transistor MRF321

Abstract: JMC5201 redcap erie redcap capacitors vk200 coil erie redcap vk200 1N4001 MRF321 case 244-04
Contextual Info: Order this document by MRF321/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF321 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc

BF844

Contextual Info: MOTOROLA Order this document by BF844/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor BF844 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 400 Vdc Collector – Base Voltage VCBO

Contextual Info: MOTOROLA O rd e r th is d o c u m e n t b y B U 2 0 8 A /D SEMICONDUCTOR TECHNICAL DATA BU208A Horizontal D eflection Transistor . . . designed for use in televisions. • • • • Collector-Emitter Voltages V q e S 1500 Volts Fast Switching — 400 ns Typical Fall Time

Contextual Info: 7T2TE37 ÜOMSb?^ 752 • S G T H IRF720 IRF720FI SGS-THOMSON ULIKgTO«! N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF720 IRF720FI ■ . ■ ■ « V dss R D S on Id 400 V 400 V < 1.8 £2 < 1 .8 0 4.2 A 3 A TYPICAL RDs(on) = 1.65 £2 AVALANCHE RUGGED TECHNOLOGY

AJT150

Abstract: ASI10548
Contextual Info: AJT150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AJT150 is a common base RF power transistor primarily designed for pulsed avionics applications such as, mode-s TCAS and JTIDS. A 4x .062 x 45° 2xB C F E D G 2xR FEATURES: