D 1481 N 60 T Search Results

BB3581

Abstract: HIGH-VOLTAGE OPERATIONAL AMPLIFIER
Contextual Info: T EL E DY N E COMPONENTS 3bE D 0^17bQ2 00Q7bH2 4 «TSC WTELEDYNE COMPONENTS 1481 OPERATIONAL AMPLIFIER — HIGH-VOLTAGE FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ The 1481 is a high-voltage operational amplifier capable of operating with supply voltages as high as +75V or as low

D 1481 N 60 T

Abstract: diode 1481 RECTIFIER DIODE 1000A 65-106
Contextual Info: Technische Information / Technical Information Netz Gleichrichterdiode Rectifier Diode D 1481 N 58 . 68 T N Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage

1481P

Contextual Info: fax id: 2006 CYM1471 CYM1481 1024K x8 SRAM Module 2048K x 8 SRAM Module Feat u res • High-d ensity 8-/16-megabit S R A M m o d u les • High-speed C M O S S R A M s — A c c e s s t i m e of 70 n s • L o w active power are constructed from eight 1471 or sixteen (1481) 128K x 8

75176a

Abstract: 75179 LTC1481 diode 1481 75173 LTC1481C LTC1481CN8 LTC1481I LTC485
Contextual Info: LTC1481 Ultralow Power RS485 Transceiver with Shutdown U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Low Power: ICC = 120µA Max with Driver Disabled Drivers/Receivers Have ±10kV ESD Protection 1µA Quiescent Current in Shutdown Mode

Contextual Info: LTC1481 Ultralow Power RS485 Transceiver with Shutdown FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Low Power: ICC = 120µA Max with Driver Disabled Drivers/Receivers Have ±10kV ESD Protection 1µA Quiescent Current in Shutdown Mode

PS08

Abstract: 100C CYM1471 CYM1481
Contextual Info: fax id: 2006 i , *" : -:V:V:V:V:V:Tÿ:- : i ^ :^ ; ^3»* i ; i M m i : M M :i : i i CYM1471 CYM1481 ^ i i i i i i yy c y p r e s s 1024K x 8 SRAM Module 2048K x 8 SRAM Module Features • High-density 8-/16-megabit SRAM modules • High-speed CMOS SRAMs — Access tim e of 70 ns

Contextual Info: fax id: 2006 «f CYM1471 CYM1481 c y pr es s 1024K x 8 SRAM Module 2048K x 8 SRAM Module Features • High-density 8-/16-megabit SRAM modules • High-speed CMOS SRAMs — Access tim e of 70 ns • Low active power are constructed from eight 1471 or sixteen (1481) 128K x 8

Contextual Info: CYM1471 CYM1481 CYPRESS SEMICONDUCTOR 1024K x 8 SRAM Module 2048Kx 8 SRAM Module Features F unctional D escription • High-density 8-/16-megabit SRAM modules T he CYM1471 an d CYM 1481 are highperform ance 8-m egabit and 16-megabit static R A M m odules organized as 1024K

Contextual Info: CYM1471 CYM1481 CYPRESS SEMICONDUCTOR 1024K X 8 SRAM Module 2048K X 8 SRAM Module Features Functional Description • High-density 8-/16-megabit SRAM modules • High-speed CMOS SRAMs — Access time of 85 ns • Low active power — 605 mVY max. , 2M x 8

Contextual Info: DS1481 P R E L IM IN A R Y DALLAS SEMICONDUCTOR DS1481 1-W ire Bus Master with Overdrive FEATURES PIN A S S IG N M E N T • P rovide s a s y n c h ro n o u s in te rfa c e to D allas S e m ic o n ­ d u c to r 1- w ir e d e v ic e s v cc QE 14 I/O QE 13 I no

Contextual Info: y CYM1471 CYM1481 1024KX 8 SRAM Module 2048K X 8 SRAM Module CYPR ESS Features Functional Description • High-density 8-/16-megabit SRAM modules • High-speed CMOS SRAMs — Access time of 85 ns • Low active power — 605 mW max. , 2M x 8 • Double-sided SMD technology

Contextual Info: CYPRESS 2S0Rbt.S fc>5E D SEMI CONDUCTOR 0010 0 7 5 7ÖM • ICYP CYM1471 CYM1481 r^ Y p p trc c 1024K x 8 SRAM Module 2048K x 8 SRAM Module SEMICONDUCTOR Features Functional Description • High-density 8-/16-megabit SRAM modules T he CYM1471 and CYM1481 are highperformance 8-megabit and 16-megabit

Contextual Info: LTC1481 / x u r m TECHNOLOGY Ultra-Low Power RS485 Transceiver with Shutdown FCflTUIteS DCSCRIPTIOH • ■ ■ ■ ■ ■ ■ The LTC 1481 is an ultra-low power differential line trans­ ceiver designed for data transmission standard RS485 applications. It will also meet the requirements of RS422.

ba1s

Abstract: a19t TH50VSF1480AASB TH50VSF1481AASB
Contextual Info: SFP- I TOSHIBA Multi Chip Package SRAM & FLASH Memory 2M BIT SRAM X 8/X 16 16M BIT FLASH ( X 8/ X 16) Data Sheet TOSHIBA TH 50VSF1480/1481A A S B TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI CHIP PACKAGE

AD9615

Contextual Info: ' 'I o ÜI J Ultrafast, Precision ANALOG ► DEVICES A 05764799 •■ I 'f 1 _ IB ■ flNHHNÊI ■ n FEATURES Low Distortion Small-Signal Bandwidth 200MHz Full Power Bandwidth 190MHz Settling: 13ns to 0.1% Offset Voltage ±0.25mV; 3 jiV/0C Bias Current ±500nA; 20nA/°C

la7900

Abstract: p15w a7908
Contextual Info: FAIRCH ILD LIN EAR IN TEGRATED CIRCU ITS • iA 7900 S ER IES MÄ7908 E L E C T R IC A L C H A R A C T E R IS T IC S (V jn = - 1 4 V , I q u T * 5 0 ° m A . - 5 5 ° C < T j < 1 50 °C , unless otherwise specifiedl C O N D ITIO N S MIN TYP M AX - 7 .7 - 8 .0

1481T

Abstract: Scans-048 DSAGER00066 ul1481 1481P
Contextual Info: IH U N IT R F I C E M I UL 1481P UL 1481T ULA 6481P ULA 6481T Uklad UL 1481 jest monolitycznyni wzmacniaczem rnocy tualej oz$8 totliwoéoì* Posìada nast^puj^ce ceohy: - wytìokopr«*dowe wyjéoie /3 À/f - wysokQ sprawnoéd, - male szumy, - male znieksztaloenie nieliniowe,

2n1486

Abstract: 2n3773 power Amplifier 2N6179 431 regulator 2N3772 40347 4503 MOSFET BUX18 dc chopper circuit 2N3053
Contextual Info: APPLICATION INFORMATION. . . Power Types [N -P-N & P-N-P] fo r In verter/S w itch in g Regulator Service Frequency Range 60 Hz to 50 kHz Peak Voltage Required Up to 0 .2 A 0 .2 to 1 A 10 to 60V 2N3053 2N4037 2N5321 2N5323 2N6179 2N6181 60 to 150V 2N1486 2N2102

Contextual Info: 37E High-Rellabìllty High-Speed CMOS Logic ICs H A RR I S CD54HC640/3A CD54HCT640/3A M 30 527 1 QQSSTìS SEMICOND SECTOR D S Octal Bus Transceiver, 3-State, Inverting I '5 2 - 2 , 1 The RCA-CD54HC640 and CD54HCT640 silicon-gate CMOS 3-state bidirectional inverting buffers are intended

TL 1838

Abstract: ITT 2222 A Mitel Semiconductor process flow to design a full 18*16 barrel shifter design pic 1840 ATS 16Mhz MITEL CLA full 18*16 barrel shifter design
Contextual Info: CLA90000 SERIES j j j j ivilTEL HIGH DENSITY CMOS GATE ARRAYS s b m Sc o n â î c t o r DS4375 - 2.0 April 1997 INTRODUCTION BENEFITS The CLA90000 family of gate arrays from Mitel Sem icon­ ductor consists of 14 fixed-size arrays with the option of building optimized arrays with up to 1.1 million gates. This

Contextual Info: 10 3 |g tB U £ [q ] PULL OUT DIRECTION -uuuuuuuuuuuuu o 00 •a 2.5 O D a / i a) NOTES * ^ □ # ^ 5 43 6 3 - * * 8 i 'ir ia u IN THE PACKAGE PART NUMBER 54363- wy81 DETAILED DIMENSIONS, SEE SALES DRAWING ROR CONNECTOR. 2 50010/ UHL NUMBER OF C0NNECT0RS:2500 PCS/REEL.

Contextual Info: 4A5 545 B DDlbOOO 400 * I N R International Hag Rectifier _ HEXFET Power MOSFET PD-9.558C IRLZ34 INTERNATIONAL R E C T I F I E R • Dynamic dv/dt Rating • Logic-Level Gate Drive • RDS on Specified at V gs=4V & 5V • 175°C Operating Temperature

Contextual Info: r r u n m _ LTC1481 tec h n o lo g y Ultra-Low Power RS485 Transceiver with Shutdown F€RTUR€S DCSCRIPTIOn • Low Power: Icc = 120|jA Max with Driver Disabled ■ Icc = 500|oA Max with Driver Enabled, No Load ■ Drivers/Receivers Have ±10kV ESD Protection

LS 2027

Contextual Info: " T M l-« SIEMENS AKTIENGESELLSCHAF M7E 1 • Lumineszenzdioden Light Emitting Diodes E m is s io n s fa rb e T yp e 0E3SbDS 0Q2b734 2 «SIEfi ^■peak E m issio n c o lo r G eh a use fa rb e Iv 2cp* B e s te lln u rrm e r C a s e c o lo r / r = 10m A)