CROSS REFERENCE POWER TRANSISTOR Search Results

transistors cross reference list

Abstract: MOTOROLA circuit for mrf150 CLASS AB mrf151g 300 MRF166W BLF246 MRF140 blf404 MRF177 Motorola transistors MRF158
Contextual Info: PHILIPS VDMOS RF-POWER TRANSISTORS CROSS REFERENCE LIST PHILIPS VDMOS vs MOTOROLA TMOS TRANSISTORS Philips Type UHF Motorola Type BLF548 MRF275G MRF275L MRF177 MRF176GU MRF175LU MRF175GU BLF546 MRF166W BLF544 MRF166C BLF542 MRF160 BLF404 BLF521 MRF158 VHF

7404 not gate ic

Abstract: 7404 not gate ttl cmos advantages disadvantages TC1426 ic 7404 not gate datasheet IC 7404 14 pin ic 7404 not gate datasheet data sheet IC 7404 not gate ic 7404 ic 7404 datasheet
Contextual Info: R E A L W Power Management MOSFET Gate Drivers from Texas Instruments O R L D S I G N A L P TM R O C E S S I N G Includes: • Pin-Compatible Cross Reference to Industry Standard Drivers • MOSFET Driver Selection Guide • Predictive Gate Drive Technology Summary

philips power transistor bd139

Abstract: bd139 smd ksh200 equivalent power transistors cross reference TRANSISTOR REPLACEMENT table for transistor AN10405 smd for bd139 BD136 SMD TRANSISTOR bd435 smd BD131 smd
Contextual Info: AN10405 Increased circuit efficiency, less required board space and saved money by replacing power transistors by low VCEsat BISS transistors Rev. 01.00 — 06 January 2006 Application note Document information Info Content Keywords Bipolar transistors, BISS, low VCEsat, PBSS, power transistors

Contextual Info: //outran_raoMtgr Devices, Inc. AMP. CROSS REFERENCE— PEAK CURRENT TO CHIP N P N PLANAR POW ER TRANSISTOR CHIP NUMBER DESCRIPTION PAGE No. 0 .1 A . 2.0A. 2.0 A. 3.0A. 4 .5 A .

obsolete ic cross reference

Abstract: transistor crossreference crossreference transistor
Contextual Info: BDX53/A/B/C BDX53/A/B/C Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications • Power Darlington TR • Complement to BDX54, BDX54A, BDX54B and BDX54C respectively TO-220 1 1.Base NPN Epitaxial Silicon Transistor 2.Collector

OF TRANSISTOR AT 30B

Abstract: TIP29C cross reference Fairchild Semiconductor tip29
Contextual Info: TIP29 Series TIP29/29A/29B/29C TIP29 Series(TIP29/29A/29B/29C) Medium Power Linear Switching Applications • Complementary to TIP30/30A/30B/30C TO-220 1 1.Base NPN Epitaxial Silicon Transistor 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted

transistor cross reference

Abstract: BD243 BD243 transistor
Contextual Info: BD243/A/B/C BD243/A/B/C Medium Power Linear and Switching Applications • Complement to BD244, BD244A, BD244B and BD244C respectively TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

BD436 cross reference

Abstract: IC 0247
Contextual Info: BD434/436/438 BD434/436/438 Medium Power Linear and Switching Applications • Complement to BD433, BD435 and BD437 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

IEC-CISPR25

Contextual Info: Atmel ATA6824C High Temperature H-bridge Motor Driver DATASHEET Features ● PWM and direction-controlled driving of four externally-powered NMOS transistors ● High temperature capability up to 200°C junction ● A programmable dead time is included to avoid peak currents within the H-bridge

TRANSISTOR 237b

Abstract: BC239 NPN transistor BC238 NPN transistor cross reference bc237 BC239CTA transistor BC 458 BC237 transistor bc 238 b
Contextual Info: BC237/238/239 BC237/238/239 Switching and Amplifier Applications • Low Noise: BC239 TO-92 1 NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter

Contextual Info:        CGD985HC 1 GHz, 25 dB gain GaAs high output power doubler Rev. 1 — 26 May 2014 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current DC , employing Hetero junction Field Effect Transistor (HFET) GaAs dies.

Contextual Info:        CGD982HC 1 GHz, 22 dB gain GaAs high output power doubler Rev. 1 — 26 May 2014 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current DC , employing Hetero junction Field Effect Transistor (HFET) GaAs dies.

Contextual Info: Atmel ATA6824 High Temperature H-bridge Motor Driver DATASHEET Features PWM and direction-controlled driving of four externally-powered NMOS transistors High temperature capability up to 200°C junction A programmable dead time Is included to avoid peak currents within the H-bridge

IEC-CISPR25

Abstract: ATA6824
Contextual Info: Atmel ATA6824 High Temperature H-bridge Motor Driver DATASHEET Features ● PWM and direction-controlled driving of four externally-powered NMOS transistors ● High temperature capability up to 200°C junction ● A programmable dead time Is included to avoid peak currents within the H-bridge

Contextual Info: CGD1042L 1 GHz, 23 dB gain GaAs low current power doubler Rev. 1 — 10 March 2014 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115AE package, operating at a supply voltage of 24 V Direct Current DC , employing Heterojunction Field Effect Transistor (HFET) GaAs dies.

BD439

Contextual Info: BD440/442 BD440/442 Medium Power Linear and Switching Applications • Complement to BD439, BD441 respectively TO-126 1 PNP Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCES

KSP92

Contextual Info: KSP92/93 KSP92/93 High Voltage Transistor TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : KSP92 : KSP93 -300 -200 V V : KSP92 : KSP93

Transistor Cross Reference

Contextual Info: KSP55/56 KSP55/56 Amplifier Transistor • Collector-Emitter Voltage: VCEO=KSP55: 60V KSP56: 80V • Collector Power Dissipation: PC max =625mW • Complement to KSP05/06 TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

BC307

Abstract: 2001 PNP TO-92
Contextual Info: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

ATA6026

Abstract: ATA6026-PHQW JESD78 QFN32
Contextual Info: Features • PWM and Direction-controlled Driving of Four Externally Powered NMOS Transistors • Internal Charge Pump Provides Gate Voltages for High-side Drivers in Permanent ON Mode and Supplies the Gate of the External Battery Reverse Protection NMOS • 5V Regulator With External Power Device NPN and Current Limitation Function

fpd2000as

Abstract: FPD200 CB100 FPD20 RO4003 InP HBT transistor low noise
Contextual Info: FPD2000AS FPD2000AS 2W Packaged Power pHEMT 2W PACKAGED POWER pHEMT Package Style: AS Product Description Features The FPD2000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power applications in L-Band. The surface-mount package has been optimized

74als power consumption

Abstract: 74AS TTL SERIES 74AS 74AS Characteristics AN-476 Complete for 74LS family 74AS SERIES pnp transistor 1000v 74AS fan-out 74ls series logic family
Contextual Info: Fairchild Semiconductor Application Note 476 March 1995 INTRODUCTION Since the introduction of the first bipolar Transistor-Transistor Logic TTL family (DM54/74), system designers have wanted more speed, less power consumption, or a combination of the two attributes. These requirements have spawned other logic families such as the DM54/

Contextual Info: ATA6843/ATA6844 BLDC Motor Driver and LIN System Basis Chip DATASHEET Features ● Broad operation voltage range from 5.25V to 32V ● Atmel ATA6843 temperature range TJ = 150°C ● Atmel ATA6844 extended temperature range TJ = 200°C ● Direct driving of six external NMOS transistors with a maximum switching

M111

Abstract: M175 SD1455 M130 M164 SD1458 SD1459 SD1476 tic 225 sd1485
Contextual Info: SILICON POWER TR AN SISTO R S a iNSISTORS SGS-THOMSON VHF TV/Linear transistors are specifically designed for television broadcast transmitters requiring ultra high linearity. Refractory/gold metallization is employed to assure maximum system availability and ruggedness.