CQX 47 Search Results

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren

smd transistor nm

Abstract: 6 pin TRANSISTOR SMD CODE p Transmissive Optical Sensor 3 pin nm smd transistor SMD Transistor 1f TRANSISTOR 610 smd Photo Modules NM smd transistor NM DUAL IR REFLECTIVE SENSOR telefunken LED
Contextual Info: VISHAY Vishay Telefunken Y Vishay Telefunken Type Designation Code Detectors U • T • • • 1 Vishay Telefunken T 1 f Series P = Plastic F = Plastic Filter S = Side View M = SMD Y = Fiber Optic Internal Classification Package Varieties 1f Detector 1r

Telefunken diode color code

Abstract: TDSG5160 telefunken led display
Contextual Info: T em ic TELEFUNKEN Semiconductors Explanation of Technical Data TEMIC light emitting diodes and displays are generally designated in accordance with the TEMIC designation system: TL. = Light emitting diode TD. = Display The following figures show how the components can be identified.

CQ 945

Abstract: CQ12B CQ22B CD50A HP4192A ISO-14001 TS-16949 2x70mH
Contextual Info: CD & CQ Series CM Interface Chokes for Data and Signal Lines Features • High attenuation over a wide frequency range • Low interwinding and coupling capacitance • Wide inductance range • Excellent quality at extremely competitive price due to high volume production

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­

TSSP 4400

Abstract: CQX 47 CQX 13 tssp
Contextual Info: TELEFUNKEN Semiconductors TSSP 4400 GaAs/GaAlAs Infrared Emitting Diode in Side View Package Description TSSP 4400 is a high intensity infrared emitting diode in GaAlAs on GaAs – technology, molded in a clear, blue–grey tinted plastic package with spherical side view lens.

led 7 segment anode TIL 702

Abstract: trw 007 diodes TDDG 5250 m 817 optron telefunken transistor opto smd code marking NEC TDDG 5250 hoa 865 DIODE PK IN 5401 7segment sm 4150
Contextual Info: CONTENTS Alphanumeric Index 5 Symbol Designation 7 Type Designation Systems — for LEDs — for Displays — for IR-Emitters — for Laser-Diodes — for Optical Switches 8 8 8 8 8 Classification Code for all LEDs and Displays — for LEDs — Displays 9

Contextual Info: 43G227 1 IHAS GGS3177 22T 33 HARRIS HSP43881 SEMICONDUCTOR Digital Filter January 1994 Features Description • Eight Filter Cells • 0 to 30MHz Sample Rate The HSP43881 is a video speed Digital Filter DF designed to efficiently implement vector operations such as FIR digital

U10A-14

Abstract: U11A-8 CQX 86 512kx8 dram simm cqx 87 u12A U11C U832 U12A-14 u318
Contextual Info: DM512K64DT6/DM512K72DT6 Multibank EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features • 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page

DS1020

Abstract: DS1020-025 DS1020-050 DS1020-100 DS1020-200 G0032
Contextual Info: DALLA S S E M I C O N D U C T O R CORP 5bl4130 3*ïE » DAL Q D OB EI S DS1020 PRELIMINARY DS1020 DALLAS Programmable 8-Bit Silicon Delay Line SEMICONDUCTOR FEATURES PIN DESCRIPTION •All-silicon time delay 1 16 ^ VCC [ 2 15 ] 0 U T in C • Models with 0.25ns, 0.5ns, 1ns, and 2ns steps

Photo diode TFK S 186 P

Abstract: TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector IR diode TFK 186 tfms 4300 n mobile receptor tfm 5380 TFK S 186 P
Contextual Info: Infrared Emitters and Detectors Data Book 1994 TELEFUNKEN Semiconductors TELEFUNKEN Semiconductors Table of Contents General Information 1. Selector guide 11 1.1 1.2 1.3 1.4 1.5 Alpha-numeric index IR emitters Detectors Photomodules IrDA-infrared data transmission

U1615

Abstract: u1515 U24A U20-16 U217 U1613 U23C-36 U16-18 U17-16 transistor BMO 123
Contextual Info: DM1M64DT6/DM1M72DT6 Multibank EDO EDRAM 1Mb x 64/1Mb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 16Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache • Fast 8Mbyte DRAM Array for 30ns Access to Any New Page

Contextual Info: Features • Supply Voltage 5V • Very Low Power Consumption 125 mW • Very Good Image Rejection By Means of Phase Control Loop for Precise 90° Phase • • • • • • Shifting Duty-cycle Regeneration for Single-ended LO Input Signal Low LO Input Level –10 dBm

3d7408-025

Abstract: 3D7408 3D7408-1 3D7408-2 3D7408-3 3D7408-4 0Q012
Contextual Info: 3D740S data\OJs> delayV devices. MONOLITHIC 8-BIT PROGRAMMABLE DELAY LINE SERIES 3D7408 FEATURES PACKAGES All-silicon, low-power CMOS technology TTUCMOS compatible inputs and outputs Vapor phase, IR and wave solderable Auto-insertable (DIP pkg.) Low ground bounce noise

cnpc

Contextual Info: Features • Supply Voltage 5 V • Very Low Power Consumption 125 mW • Very Good Image Rejection By Means of Phase Control Loop for Precise 90° Phase • • • • • • Shifting Duty-cycle Regeneration for Single-ended LO Input Signal Low LO Input Level -10 dBm

Contextual Info: paradîgm ' P R E L IM IN A R Y PDM34089 3.3V 64K x 32 Fast CMOS Synchronous Static RAM with Burst Counter Features Interfaces directly with the x86, Pentium , 680X0 and PowerPC™ processors Single 3.3V power supply Mode selectable for interleaved or linear burst:

Contextual Info: _ ADVANCE INFORMATION Paradigm 3.3V 32K x 32 Fast CMOS Synchronous Static RAM with Burst Counter and Output Register Features Description □ Interfaces directly with the i486 , Pentium™, 680X0 and Power PC™ processors 66.6,50,40 MHz The PDM34072 is a 1,048,576 bit synchronous ran­

PJ 52

Abstract: U1615 U18-18 u1515 U23D-43 U176 U21-18 u1818 L115 U218
Contextual Info: Enhanced Memory Systems Inc. DM1M64DT6/DM1M72DT6 Multibank EOO EDRAM 1Mb x fflM b x 72 Enhanced DRAM DIMM Product Specification Features • l 6Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache ■ Fast 8Mbyte DRAM Array for 30ns Access to Any New Page

U23C-36

Contextual Info: •K p n h o n p p f V i i DM 1M64DT6/DM1M72DT6 Multibank EDOEDRAM m m * d 1 2 ra m d i m m ProductSpecification Features ■ 16Kbytes SAM Cache Memory for 12ns Random Reads Within Eght Active Pages Multi bank CSche ■ Fast 8Mbyte DRAM Array for 30ns Access to Any New Page

Contextual Info: , PRELIMINARY PARADIGM PDM3408Ô 3.3V 64K x 32 Fast CMOS Synchronous Static RAM with Burst Counter and Output Register Features Description □ Interfaces directly with the x86, Pentium , 680X0 and PowerPC™ processors 100, 80, 66, 60, 50 MHz □ Single 3.3V power supply

Contextual Info: IBM14M3272IBM14M6472 IBM14M3264 High Performance SRAM Modules Features • 256K and 512K secondary cache module family using Synchronous and Asynchronous SRAM for PowerPC applications • Single +3.3V or +5V, +/- 5% power supply • Organized as a 32K or 64K x 72 package on a

pin DIAGRAM OF IC 7428

Contextual Info: IBM14N3264 IBM14N6464 High Performance SRAM Modules Features • 256KB and 512KB secondary cache module family for Intel Triton chip set. • Organized as a 32K or 64K x 64 package on a 4.34” x 1.13”, 160-lead, Dual Read-out DIMM • Available in interleaved ¡486/Pentium burst

Contextual Info: DS1020 DALLAS SEMICONDUCTOR D S1020 Program m able 8-Bit Silicon Delay Line FEA TU R E S PIN A S S IG N M E N T • All-silicon time delay IN I— • Mo de ls with 0.15 ns, 0.25 ns, 0.5 ns, 1 ns, an d 2 ns 1 “ I 16 J V C C 2 15 U steps OUT Us H P7 Q /PO

marking code JSW

Abstract: IDT709379 IDT709379L 016-l JSW 70
Contextual Info: HIGH-SPEED 32K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT709379L F e a tu re s * True Dual-Ported memory cells which allow simultaneous access o f the same memory location High-speed clock to data access - * ♦ Full synchronous operation on both ports