CPT12035
Abstract: CPT12040 CPT12045 CPT12050 MBR12035CT MBR12040CT MBR12045CT
Contextual Info: Schottky PowerMod CPT12035 - CPT12050 A Dim. Inches R Min. G B Q N Baseplate A=Common Anode W Baseplate Common Cathode F U U C Baseplate D=Doubler H V Microsemi Catalog Number Industry Part Number CPT12035* CPT12040* CPT12045* CPT12050* MBR12035CT MBR12040CT
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cpt12035cpt12050cpt12040cpt12045+4repetitiv160mbr12035ctmbr12040ctmbr12045ct
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Contextual Info: SCHOTTKY RECTIFIER DIODES, MODULE, DUAL M a x im u m IS f P a rt N um ber '•ptif'!'*!? t. A C P U 2035 GPT12040 120 lis lllliiiil CPT12050 mm Peak (a v e rs e V e tte g e T ( C | P IV 140 P e a k F o rw a rd M a x im u m M a x im u m S u r g e C u r r e n t F w d V o ltag e
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Contextual Info: CPT12035 thru CPT12050 I n ter n a tio n a l S e m ic o n d u c to r , I n c . SCHOTTKY POWER MODULE f u Inches Min B a s e p l a te Common Cathode B t i J Baseplate A=Common Anode ►I I ►! • B as e p l a te ->1 N 14- ->l Q 14- ->1 N l 4 - f t ISI Part #
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Contextual Info: Schottky PowerMod CPT12035 - CPT12050 A Dim. Inches R Min. G B Q N Baseplate A=Common Anode W Baseplate Common Cathode F U U C Baseplate D=Doubler H V Microsemi Catalog Number Industry Part Number CPT12035* CPT12040* CPT12045* CPT12050* MBR12035CT MBR12040CT
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cpt12035cpt12050cpt12040cpt12045+3mbr12035ctmbr12040ctmbr12045ct
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CPT12035
Abstract: CPT12040 CPT12045 CPT12050
Contextual Info: Schottky PowerMod CPT12035 - CPT12050 ¥ Baseplate A=Common Anode V Jd i H d t z Baseplate Common Cathode t iti: -I Al °-N - TT E Notes: I -> R > Baseplate D=Doubler Dim. Inches Min. Max. 3.630 A -B 0.700 0.800 0.630 C -E 0.120 0.130 F 0.490 0.510
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s4 43a
Abstract: CPT12035 CPT12040 CPT12045 CPT12050 MBR12035CT MBR12040CT MBR12045CT
Contextual Info: Schottky PowerMod CPT12035 - CPT12050 Dim. Inches Min. V Baseplate A=Common Anode V I u — I / Baseplate Common Cathode TÉi \ ! / u |- '\l ! -a I c T T E M icrosem i C atalog N um ber In d u s try P a rt N u m b e r C PT12035* CPT12 0 4 0 * CPT12 0 4 5 *
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cpt12035cpt12050cpt12040cpt12045+5mbr12035ctmbr12040ctmbr12045ctrepeti020s4 43a
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CPT12040
Abstract: CPT12045 CPT20035 CPT30040 CPT30045 CPT30050 cpt30090
Contextual Info: SCHOTTKY RECTIFIER DIODES, MODULE, DUAL Number Maxi Ave Rect m e t í C ur re r t @ : t . & 3 S I: CPT12035 CPT12040 CPT12045 CPT12050 120 T C( 140 M axim um Pe a k F o r w a r d Peak S u r g e C u r r e n t Fwd Vol ta g e @ R a t e d 1, in v e rs e @ S 3ms
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cpt1z035cpt12040cpt12045cpt1z050+7cpt20035cpt30q35cpt30040cpt30045cpt30050cpt50060cpt30090
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MBR20030CTL
Abstract: MBR20050CT MBR30050CT MBR30045CT MBR20015CTL 200CNQ030 244N MBR1605 SPD115417A fst30045
Contextual Info: tSENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 890, REV. A Plastic Schottky Rectifier Product Catalog New Package! TO-247 Featuring: High Current/Leaded and Surface Mount Package Types SENSITRON SEMICONDUCTOR PLASTIC SCHOTTKY RECTIFIERS Contents Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
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o-247nq045403cnq080403cnq100+1660cnq045sl61cnq045sl62cnq030sl63cnq100sl69cnq135sl69cnq150slmbr20030ctlmbr20050ctmbr30050ctmbr30045ctmbr20015ctl200cnq030244nmbr1605spd115417afst30045
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laser range finder schematics
Abstract: schematic satellite finder thyristor cdi Notebook lcd inverter schematic PNP SILICON TRANSISTORS MIL GRADE JANTXV 2N5666 1n5819 trr MICROSEMI 2N2907A scr firing circuit for dc servo driver cdi dc/dc
Contextual Info: power conditioning More than solutions, enabling possibilities Discrete Semiconductors Powermite Products Power Schottkys/Rectifiers MOSFETs Bipolar Transistors Silicon Controlled Rectifiers Battery Bypass Circuits Switching Power and Conditioning Signals
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laser range finder schematicsschematic satellite finderthyristor cdinotebook lcd inverter schematic+6pnp silicon transistors mil gradejantxv 2n56661n5819 trrmicrosemi 2n2907ascr firing circuit for dc servo drivercdi dc/dc
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MUR1560 equivalent
Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in
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mbrd835lvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605mur1560 equivalent1n4004 smas1a sod 88s1a marking code sod 881n5189ss33 smadiode marking us1jdiode 6a106tq035usd745c equivalent
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1n5822 trr
Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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mbrd1035ctlvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe6051n5822 trra14f diodefr105 diodemr850diode a14abyv27 200 taplt2a02mbr3100 06301n4007 sod-123ses50
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OZ 9983
Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —
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mbrb3030ctlvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605oz 9983mbr3045pt transistor940 629 motorola 220motorola marking code k 652 to-220mur3030transistor bc 456diode marking 1n4007 motorola1n2069a14f diodebyv33-45
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Diode 1N4007 DO-7 Rectifier Diode
Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced
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mbrm120et3vhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605diode 1n4007 do-7 rectifier diodefe8dmarking bcvba157* diodemur160 smadiode rgp10gmbrd360cathode top 1n56191n2069mur120 equivalent diode
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25CC
Abstract: CPT12035 CPT12040 CPT12045 CPT12050 MBR12035CT MBR12040CT MBR12045CT 9416j
Contextual Info: Z c ” Schottky PowerMod — D “ r . — 2035 - ¥ Baseplate A=Common Anode V U t H h Baseplate Common Cathode 1 Fi r F , — i- I - 1 - o-W—j —N - o u • FT Notes: -A Baseplate D=Doubler 2050 ^ Dim. Inches Min. M illim eters Max. A -3.630
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LE79Q2281
Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Contextual Info: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security
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le79q22811n6761-12n2369au2n2907aub+6br17datasheet transistor si 6822dimming led aplicationsdimming led driver aplicationsgc4600ic zl70572
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stpr16
Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •
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murb1620ctvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605stpr16mur480e340l-02pk mur 460bv 202 01581n541ak sot23stps2045ss33 smba14f diode
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b2545 transistor
Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection
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mbr2535ctmbr2545ctb2535b2545+14vhe205vhe210vhe215vhe220vhe2401b2545 transistorto220 mur460byv43-45mur 460 0801mr756rlmur420 diodeequivalent transistor b25356a10 bl diodediode a14a surface
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MR2835S equivalent
Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected
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mbr6045ptvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605mr2835s equivalenta14f diode1n5404 diodefe16amur860 equivalentmur1620ctmur420 diodeusd745c equivalentmbrd360pr1502
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HERA86G
Contextual Info: INDEX 1 N 3 4 A . .95 1 N 5 5 B . . 9 5 1 N 6 0 . . 95 1 N 8 7 . . 9 5 1 N 9 8 A . . 9 5 1 N 1 0 Q . .95 1 N 1 3 7 B . .9 5 1 N138B. .95 1 N 2 0 0 . . 9 5 1 N 2 0 1 . .95 1 N 2 0 2 . .95 1 N 2 0 3 . .95
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MUR1560 equivalent
Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
Contextual Info: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON
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mr852vhe1401vhe1402vhe1403+13vhe1404vhe205vhe210mur1560 equivalent1n4936 equivalentmur1100e equivalent1n5404 equivalentmur620ct equivalentmur420 equivalentmur1620ct equivalentbyv19-45mur1660ct equivalentmur1520 equivalent
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mur1650
Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and
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mbrb1045vhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605mur1650t4 sod-123 1n4004mr25101n2069ses5001mur420 equivalentct pr1504equivalent for fr302 diodemur 460 switchdiode a14a surface mount
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VRF2933FL
Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
Contextual Info: Power Products MICROSEMI POWER PORTFOLIOPortfolio 2014-2015 Power Products New image here TBD Power Semiconductors Power Modules RF Power MOSFETs Power Matters. About Microsemi Microsemi Corporation Nasdaq: MSCC offers a comprehensive portfolio of semiconductor and system
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ms5-001-14vrf2933flvrf164flarf463ap1+2non - isolated buck, applicationdrf1301
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SCH13
Abstract: 220S9
Contextual Info: Schottkv Rectifiers Part Number Microsemi Division Package Outline 1Type Micmsemi Mil Data 10 VR IFSM VF @ IO Spec Sheet ID Amps (Volts) (Amps) (Volts) 1 FST10035 FST10135 FST16035 FST10040 FST10140 FST16040 FST10145 FST10045 MSASC100H45H MSASC100H45H FST16045
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transistor U1620R
Abstract: fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100
Contextual Info: MUR1620CTR Preferred Device SWITCHMODE Dual Ultrafast Power Rectifier . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full–wave
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mur1620ctrmur1620ctvhe205vhe210+16vhe215vhe220vhe2401vhe2402vhe2403vhe2404transistor u1620rfast recovery diode ses5001mur1620ct equivalentpk mur 460 diodepk mur 460transistor mbr4045pt1n2069mbrd360fast recovery diode, 24 amperes, 600 volts, button typestps20h100
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