CP591 Search Results

2N2907A

Abstract: 2N2905A CMPT2907A CMST2907A CXT2907A CZT2907A PN2907A 2N2907A die
Contextual Info: PROCESS CP591X Small Signal Transistor PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 5.9 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization

2N2907A die

Abstract: 2N2907A PN2907A equivalent 2N2907A 2N2905A CMPT2907A CMST2907A CP591V CXT2907A CZT2907A
Contextual Info: PROCESS CP591V Small Signal Transistor PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization

2N2907A die

Abstract: PN2907A
Contextual Info: PROCESS CP591V Small Signal Transistor PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization

equivalent 2N2907A

Abstract: 2N2905A 2N2907A CMPT2907A CMST2907A CP591V CXT2907A CZT2907A PN2907A 2N2907A die
Contextual Info: PROCESS CP591V Small Signal Transistor PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization

2N2907A die

Abstract: CHIP TRANSISTOR 2n2905a 2N2905a equivalent ELECTRONIC TRANSISTOR CORP 2N2907A CMPT2907A CMST2907A CP591V CXT2907A
Contextual Info: PROCESS CP591V Central Small Signal Transistor TM Semiconductor Corp. PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS

2N2905A

Abstract: 2N2907A CMPT2907A CMST2907A CP591 CXT2907A CZT2907A PN2907A
Contextual Info: PROCESS CP591 Central Small Signal Transistor TM Semiconductor Corp. PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS

KI 2222A

Abstract: transistor 2222a sot-363 MARKING l0
Contextual Info: Central CMKT2207 Semiconductor Corp. SURFACE MOUNT ULTRAmini COMPLEMENTARY SILICON TRANSIS­ TORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2207 consists of one 2222A NPN transistor and an individual isolated complementary 2907A PNP transistor, manufactured by the epitaxial planar

Contextual Info: Central CMLT2207 Semiconductor Corp. SURFACE MOUNT PICOmini DUAL,COMPLEMENTARY SILICON TRANSISTORS MAXIMUM RATINGS: DESCRIPTION: The Central Semiconductor CMLT2207 con­ sists of one 2N2222A NPN silicon transistor and one individual isolated complementary

C2F transistor pnp

Contextual Info: Central Semiconductor Corp. CMPT2907A DESCRIPTION: The Central Semiconductor CMPT2907A type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a sur­ face mount package, designed for small signal general purpose and switching applications.

Contextual Info: Central" CXT2907A semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal

Contextual Info: Central“ CMST2907A Semiconductor Corp. SURFACE MOUNT SUPERmini PNP SILICON TRANSISTOR DESCRIPTION: The Central Semiconductor CMST2907A type is a PNP silicon transistor manufactured by the epi­ taxial planar process, epoxy molded in a SUPERmini™ surface mount package, designed

LB-215

Contextual Info: Central" CMXT2907A Semiconductor Corp. SURFACE MOUNT SUPERmini DUAL PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXT2907A type is a dual PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a SUPERmini™ surface mount package, designed for

SOT89 MARKING CODE B2

Contextual Info: Central' CXT2907A Semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT2907A type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal

transistor marking SA p sot-23

Abstract: transistor marking SA sot-23
Contextual Info: Central" CMPT2907AE Semiconductor Corp. ENHANCED SPECIFICATION DESCRIPTION: The Central Semiconductor CMPT2907AE is an Enhanced version of the CMPT2907A PNP Switching transistor in a SOT-23 surface mount package, designed for switching applications, interface circuit and driver circuit applications.

transistor k70

Contextual Info: Central CMKT2207 Semiconductor Corp. SURFACE MOUNT ULTRAmini COMPLEMENTARY SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2207 consists of one 2222A NPN transistor and an individual isolated complementary 2907A PNP transistor, manufactured by the epitaxial planar

marking code 359 sot-23

Abstract: C2F SOT23 sot-23 Marking LG C2f TRANSISTOR 359 sot23
Contextual Info: Central semiconductor Corp. CMPT2907A DESCRIPTION: PNP SILICON TRANSISTOR The Central Semiconductor CMPT2907A type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a sur­ face mount package, designed for small signal

Contextual Info: Central CMXT2907A Semiconductor Corp. SURFACE MOUNT DUAL PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXT2907A type is a dual PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a sur­ face mount package, designed for small signal general

Contextual Info: Central" CMLT2907A Sem iconductor Corp. SURFACE MOUNT PICOmini DUAL PNP SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEM ICONDUCTOR CMLT2907A consists of two individual, isolated 2907A PNP silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-563

Marking TRANSISTOR 737

Abstract: marking code ER transistor
Contextual Info: Centrar MMPQ6502 Semiconductor Corp. SURFACE MOUNT COMPLEMENTARY SILICON QUAD TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR MMPQ6502, consisting of two complementary pairs of transis­ tors, available in the SOIC-16 surface mount package, is designed for general purpose amplifi­

CP588V

Abstract: CPD76 CPD96 CP-392V CP307 CP188 CP191 CPD48 CPD80 CPD91
Contextual Info: PCN #: 105 Notification Date: 24 November 2004 145 Adams Avenue Hauppauge, New York 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Mailto: processchange@centralsemi.com http://www.centralsemi.com/processchange Process Change Notice Parts Affected: Small signal discrete semiconductors, wafers, and die in chip form.

BF244 datasheet

Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
Contextual Info: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216

UJT 2n3904

Abstract: transistor 2N4033 ujt 2N6027 2n4209 datasheet mj15003 equivalent transistor 2N5401 mj15004 2N4393 MJ15003 MJ15004 BAV45
Contextual Info: Selection Guide Page Small Signal Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Bipolar Power Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Programmable UJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

Contextual Info: Central" MMPQ2907A Semiconductor Corp. SURFACE MOUNT PNP SILICON QUAD TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR MMPQ2907A, consisting of four transistors and available in the SOIC-16 surface mount pack­ age, is designed for general purpose amplifier

Marking lb sot23-5

Contextual Info: Central" CMPT2907AE semiconductor Corp. ENHANCED SPECIFICATION DESCRIPTION: SURFACE MOUNT PNP SILICON TRANSISTOR The Central Semiconductor CMPT2907AE is an Enhanced version of the CMPT2907A PNP Switching transistor in a SOT-23 surface mount package, designed for switching applications,