CORECTOR Search Results

2N2484

Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N2484 NPN Silicon Small-Signal Transistor crystaloncs 2eo$ veterans Highway Suite 14 . designed tor general-purpose amplifier applications. Ronkof.koma, N.Y. 1177b, MAXIMUM RATINGS Unit Symbol Value CoRector-Emitter Voltage VCEO

NPN S2e

Abstract: Darlington pair pnp npn DARLINGTON 10A NTE281 nte275 NTE280 DARLINGTON darlington low power 268 darlington darlington NPN 50 amp
Contextual Info: N T E E L E C T R O N I C S INC S2E D • b M B l S S 6} D 0 Q 2 b D l SQ5 * N T E T—33—01 Maximum Breakdown Voltage Maximum CoRector Power Dissipation Watts NTE TVpe Number Polarity and Material Description and Application Case Style Diag. No. Maximum

lc 945 p transistor NPN TO 92

Abstract: 945 TRANSISTOR lc 945 p transistor C 945 Transistor lc 945 p transistor NPN transistor c945 TRANSISTOR c945 p BR c945 C945 c945 TRANSISTOR
Contextual Info: M C C TO-92 P la stic-E n ca p su la te T ra n sisto rs C 945 TRANSISTOR NPN F EAT URES P cm: 0.4W (Tamb=25°C) current: IcM: 0 .1 5 A CoRector-base voltage V(BR)CBO: 60 V IQ f t ë i^ Î% a n d storage junction temperature range -55°C to + 150”C T j.T s tg :

3da92

Contextual Info: bSE D • ÔE3StiGS GDS3414 =144 ISIE6 SIEM ENS SIEMENS AKTIENGESELLSCHAF 868352 - Bit Dynamic Sequential Access Memory for Television Applications TV - SAM Preliminary Data SDA 9251X CMOS IC Features • 212 x 64 x 16 x 4 bit organization • Triple port architecture

2SA1492

Contextual Info: SSE D SANKEN ELECTRIC CO LTP • 7^0741 D0DDT17 163 ■ S A K J Silicon PNP Epitaxial Planar ☆Complement to type 2SC3856 2SA1492 • Outline Drawing 2. -MT-100 T03P Application Example : Audio and General Purpose Electrical Characteristics Symbol

Contextual Info: TIP41, TIP41A, 71P41B, TIP41C NPN SILICON POWER TRANSISTORS Copyright 1997, Power innovations Limited, UK D E C E M B E R 1970 - R E V IS E D M A R C H 1997 • Designed for Complementary Use with the TIP42 Series • 65 W at 25”C Case Temperature •

V8141

Contextual Info: CLASSIFICATION CHART LT V 4N25 LTV 4N26 C T R 2 0 % Min C T R 2 0 % Min H igh speed LTV 4N27 LT V 4N28 C T R 1 0 % M in C T R 1 0 % M in LTV 4N35 LTV 4N37 C T R 1 0 0 % Min C T R 1 0 0 % M in L T V 4N Series 6 P IN D IP High sensitivity L T V 7 00 Se ries

t1p41

Abstract: T1P32C SAL 41B TTP32 T1P-32C TIP328 T1P32 transistor tip31 tip32C samsung T1P32B
Contextual Info: SAMSUNG S EMI C O NDU CT OR INC 14E TIP3T SEKIHhS D I 7^4142 000771t, 1 | TIP31/31A/31B/31C NPN EXITAXIAL SILICO N TRANSISTOR / f MEDIUM POWER LINEAR n SWITCHING APPLICATIONS • Complement to TIP32/32A/32B/32C ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

KSR1102

Abstract: KSR2102 transistor marking w0
Contextual Info: S A M S U N G SEMICONDUCTOR IN C¡7 3 5 .1 1 1 4 E O KSR1102 | 7^4145 0 0 0 7 0 4 1 5 J| NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Sw itching Circuit, inverter, Interface circuit Driver circuit SOT-23 • Built in bias Resistor (R,=10Kfl, R2=10KQ)

r1lk

Abstract: GP2S22 100AA
Contextual Info: GP2S22 GP2S22 Subminiature Photointerrupter H Features 1. 44mm compact resin mold type 2. Focal distanse : 0.6mm 3, Visible light cut-off type • Hne Dimensions Unit : mm Internal connection ■ mtions 1. Audio equipment 2. VCRS ,~, D A“~~ 3 Collector

B0647

Abstract: B0645 bd649 TAG 064
Contextual Info: BOMS, BD647, BD649, BD651 NPN SILICON POWER DARUNG70NS Copyrtght C 1997, Power Innovations Limited, 1893 - REVISED M ARCH 1997 • Designed for Complementary Use with BD646, BD648, BD650 and BD652 • 62.5 W at 25°C Case Temperature

t1p117

Abstract: TIPT17
Contextual Info: TIP115, TIP116, TIP117 PNP SILICON POWER DARLINGTONS Copyright <0 1997, Power Innovations Lim ited, UK • Designed lor Complementary Use with TIP110, TIP111 and TIP112 • 50 W at 2S“C Case Temperature • 4 A Continuous Collector Current • Minimum hpE ° 500 at 4 V, 2 A

TN3000

Abstract: MARKING A4 transistor MARKING T108 inverter ic marking H.A SMT6 T108 G7 marking Code marking tA2 marking a4 transistors
Contextual Info: UMA4N / UMB4N / UMB8N / FMA4A / IMB4A / IMB8A UMG4N / UMG7N / UMH4N / UMH8N / FMG4A / FMG7A / IMH4A / IMH8A Transistors I Digital Transistor Duai Digital Transistors for Inverter Driver UMA4N / UMB4N / UMB8N / FMA4A / IMB4A / IMB8A •Features 1 ) Two DTA114T transistors are housed in a UMT or SMT package.

AM51A

Abstract: CXD2548R Laser pickup 11t 36 hard disc motor drive application
Contextual Info: CXD2548R CD Digital Signal Processor with Built-in Digital Servo and DAC For the availability of this product, please contact the sales office. Description The CXD2548R is a digital signal processor LSI for CD players. This LSI incorporates a digital servo,

BOW63A

Contextual Info: BDW63, BDW63A, BDW63B, BDW63C, BDW63D NPN SILICON POWER DARLINGTONS Copyright 0 1997 Power Innovations Umlted, U • K _ AUGUST 1978 - REVISED MARCH 1997 Designed tor Complementary Use with BDW64, BOW64A, BOW64B, BDW64C and BDW64D • 60 W at 25'C Case Temperature

JDV2S01S

Abstract: TA4205FC 5GHz oscillator
Contextual Info: TA4205FC TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4205FC Use for Voltage Controlled Oscillator VCO . Features • Bias resistors and two transistors for oscillation and buffer are packed in one package; hence, TA4205FC can easily compose a VCO.

5GHz oscillator

Abstract: JDV2S01E TA4205FC 3GHz oscillator VCO
Contextual Info: TA4205FC TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4205FC Use for Voltage Controlled Oscillator VCO . Features • Bias resistors and two transistors for oscillation and buffer are incorporated in one package; therefore the TA4205FC can

BD2438

Abstract: B0243 BD243
Contextual Info: BD243, BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK • Designed lor Complementary Use wtth the BD244 Series • 65 W at 25°C Case Temperature • 6 A Continuous Collector Current • 10 A Peak Collector Current

Contextual Info: Product specification Ph ilip * S em iconductors BLU86 UHF power transistor F EA T U R ES • SM D encapsulation Q U ICK R E F E R E N C E DATA R F performance at Ts S 60 “C in a common emitter dass-B test circuit see note 1 . • Emitter-ballasting resistors for

BDV64C

Abstract: BDV64B B0V64B 8DV64B
Contextual Info: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK • • JU NE 1993 - R E V IS E D M A R C H 1997 Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C SOT-93 P A C KA G E TOP VIEW