CNX83A AN Search Results

Contextual Info: Philips Semiconductors Product specification High-voltage optocouplers ÖUALITY tec h n o lo g ie s corp CNX82A/CNX83A S7E T> TMbbôSl OOOMbOS bS3 «fiTY FEATURES • High current transfer ratio and low saturation voltage, making the devices suitable for use with

CNX82A

Abstract: philips cnx82a
Contextual Info: P h ilip s S em ico n d u cto rs Product specification CNX82A/CNX83A High-voltage optocouplers FEATURES • High current transfer ratio and low saturation voltage, making the devices suitable tor use with TTL integrated circuits • High degree of A C and DC

philips cnx82a

Abstract: CNX83A CNX82A DE0805 435A CNX83 PHHI BS415 BS7002 25KVDC
Contextual Info: Produ ct sp ecification Philip» Semiconductors High-voltage optocouplers CNX82A/CNX83A FEATURES • High current transfer ratio and low saturation voltage, making the devices suitable tor use with TTL Integrated circuits • High degree of A C and DC insulation 3750 V (RMS and

CNX83A

Abstract: E244343 OPTO611
Contextual Info: Global Supplier of Optoelectronic Solutions CNX83A ALL Product Lead Free, RoHs Compliant UL # E244343 Features: Schematic: 1 6 2 5 3 4 1. Current transfer ratio CTR min 40% at IF=10mA Vce=0.04V 2. High isolation voltage between input and output (Viso = 5300Vrms, 7500Vpk).

pc111 optocoupler

Abstract: PC113 optocoupler coy80ng optocoupler crossreference 4N25 PHILIPS optocoupler H11A1 philips cnx82a 4N35 cny17 optocoupler 4N25 optocoupler mct2e
Contextual Info: Philips Semiconductor» Optocouplers Cross-reference Guide O PT O CO U PLER PH ILIPS’ O PTO CO U PLER REPLA C E M E N T CODE no te l O PTO CO UPLER PH ILIPS’ O PTO CO UPLER REPLAC EM EN T CODE (note 1) CNX35 CNX35U direct H11A3 H11A3 direct CNX36 CNX36U

QT OPTOELECTRONICS cny17-2

Contextual Info: OPTOELECTRONICS OPTOCOUPLERS P h o t o t r a n s is t o r O u t p u t ; G a A s In p u t CTR Part Number ANODE[Î e] BASE CATHODE[2 1i N/C¡3 Ji 5] COLLECTOR 1 3 EMITTER 4N25 4N26 4N27 4N28 4N35 4N36 4N37 CNW11AV-1 CNW11AV-2 CNW11AV-3 CNW83 CNW85 CNX35U CNX36U

CNX83A

Abstract: CNX82A SL5582 SL5583 a140mW logic ic 6pin
Contextual Info: 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS CNX82A.W, CNX83A.W, SL5582.W & SL5583.W DESCRIPTION PACKAGE DIMENSIONS The CNX82A.W, CNX83A.W, SL5582.W AND SL5583.W, consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.

CNX83A

Abstract: CNX82A SL5582 SL5583
Contextual Info: 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS CNX82A.W, CNX83A.W, SL5582.W & SL5583.W DESCRIPTION PACKAGE DIMENSIONS The CNX82A.W, CNX83A.W, SL5582.W AND SL5583.W, consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.

CNX82A

Abstract: CNX83 CNX83A SL5582 SL5583
Contextual Info: 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS CNX82A.W, CNX83A.W, SL5582.W & SL5583.W DESCRIPTION PACKAGE DIMENSIONS The CNX82A.W, CNX83A.W, SL5582.W AND SL5583.W, consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.

MAN-8610

Abstract: CNW82 HLMPD150A CNY17GF-1
Contextual Info: ËQ OPTOELECTRONICS P art N u m be r 1N6264 1N6265 1N6266 PART NUM BER INDEX P art N u m be r Page 95 _ 95 95 Page P art N u m be r Page P art N u m b e r Page P art N u m b e r Page CNW135 CNW135.300 15 CNY17GF-3.300 12 12 75 75 13 CNY17GF 4 GMC7975C GMC7975CA

CT2300

Contextual Info: OPTOELECTRONICS O P T O C O U P LER S P H O T O T R A N S I S T O R O U T P U T ; G a A s IN P U T CTR @ P art 1 0 m A l F % Num ber ANODE CATHODE [2 N.C 6] BA SE U [3 r " A 5] COLLECTOR I— 3 B V C eo (V ) B V cbo ^ C E (sat) to N / to F F (V ) (V ) (M S)

Contextual Info: EH OPTOELECTRONICS OPTOCOUPLERS P h o t o t r a n s i s t o r O u t p u t : G a A s 1n p . 1 1 CTR @ Part Num ber 4N25 CATHODE [2 N/C {3 6] BASE <r 5] COLLECTOR L L_ 20 — B V CE0 B V cbo V (V) min min 30 A g en cy V CE (sat) 'O N ^ O F F (V) m ax (M S )

CNX83

Abstract: CNX82A CNX83A SL5582 SL5583 CNX83A an
Contextual Info: 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS CNX82A.W, CNX83A.W, SL5582.W & SL5583.W DESCRIPTION PACKAGE DIMENSIONS The CNX82A.W, CNX83A.W, SL5582.W AND SL5583.W, consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.

CNX82

Contextual Info: 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS CNX82A.W, CNX83A.W, SL5582.W & SL5583.W DESCRIPTION PACKAGE DIMENSIONS The CNX82A.W, CNX83A.W, SL5582.W AND SL5583.W, consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.

LM 8105

Abstract: SD318 AN6610 5354A B1134 SE773 CPL-2503 B1133 SE158 6363t
Contextual Info: [•a OPTOELECTRONICS P art N um ber PART NUM BER INDEX Page P art N um ber Page P art N um ber Page P art N um ber Page P art Num ber 1N6264 37 C N Y17F-3 13 G M A 8975 C 144 H11D4 14 H CPL-2730 1N6265 37 C N Y17F-4 13 G M C 2275 C 148 H11F1 20 Page _ 17

FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI

TXD10K40

Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

1000w inverter PURE SINE WAVE schematic diagram

Abstract: 1000w inverter PURE SINE WAVE schematic diagram smps 500w half bridge SCHEMATIC 1000w Power Semiconductor Applications Philips Semiconductors SCHEMATIC 1000w smps smps circuit diagram 48V SMPS 1000w "Power Semiconductor Applications" Philips BU2508 Transistor 500w SINE WAVE inverter schematic diagram smps 1kW
Contextual Info: S.M.P.S. Power Semiconductor Applications Philips Semiconductors CHAPTER 2 Switched Mode Power Supplies 2.1 Using Power Semiconductors in Switched Mode Topologies including transistor selection guides 2.2 Output Rectification 2.3 Design Examples 2.4 Magnetics Design

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.