CMOS SRAM 35NS 8K X 8 DIP Search Results
CMOS SRAM 35NS 8K X 8 DIP Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy | 
|---|---|---|---|---|---|
| HM4-6504S-8/B |   | HM4-6504 - Standard SRAM, 4KX1, 220ns, CMOS |   | ||
| EP1810LI-35 |   | EP1810 - Classic Family EPLD, Logic, 900 Gates, 48 Macrocells, 35ns, Industrial |   | ||
| EP1810LC-35 |   | EP1810 - Classic Family EPLD, Logic, 900 Gates, 48 Macrocells, 35ns, Commercial |   | ||
| EP1810GI-35 |   | EP1810 - Classic Family EPLD, Logic, 900 Gates, 48 Macrocells, 35ns, Industrial |   | ||
| EP1810GC-35 |   | EP1810 - Classic Family EPLD, Logic, 900 Gates, 48 Macrocells, 35ns, Commercial |   | 
CMOS SRAM 35NS 8K X 8 DIP Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
| Contextual Info: APR 2 2 19« 57, SGS-THOMSON IMS 1635 • y 8K X 8 CMOS SRAM VERY HIGH SPEED DOUBLE METAL CM OS SRAM ADVANCED PR O C ESS- 1.2 MICRON DESIGN RULES 8 K x 8 BIT ORGANISATION 15, 20, 25, 35ns ADDRESS ACCESS TIMES 15, 20, 25, 35ns CHIP ENABLE ACCESS TIMES 28 FULLY TTL COMPATIBLE | OCR Scan | PDIP28 PSOJ28 | |
| tagram 8k
Abstract: tag 665 100 MK-48 MK48S74x MK48S74 
 | Original | MK48S74 PSDIP28 SOJ28 tagram 8k tag 665 100 MK-48 MK48S74x MK48S74 | |
| Contextual Info: /= 7 ^ 7 # SG S-TH O M SO N . IUIM MD(g§ K MK48S74 VERY FAST CMOS 8K x 8 CACHE TAGRAM • 8K x 8 CMOS SRAM with ONBOARD COMPARATOR ■ ADDRESS to COMPARE ACCESS TIME: 20, 25, 35ns ■ FAST CHIP SELECT COMPARE ACCESS 10ns ■ MATCH OUTPUT with FASTTAG DATA to | OCR Scan | MK48S74 | |
| 48S74Contextual Info: rz7 SGS-THOMSON ^ 7 M IL iC T i® « S If M K 48S74 VERY FAST CMOS 8K x 8 CACHE TAGRAM • 8K x 8 CMOS SRAM WITH ONBOARD COMPARATOR ■ ADDRESS TO COMPARE ACCESS TIME: 20, 25, 35ns - FAST CHIP SELECT COMPARE ACCESS 10ns ■ MATCH OUTPUT WITH FAST TAG DATA TO | OCR Scan | 48S74 MK48S74 MK48S74 PSDIP28 PSOJ28 48S74 | |
| Contextual Info: A S l AUSTIN SEMICONDUCTOR, INC. SRAM 8K x 8 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View) • SMD 5962-38294 • MIL-STD-883 High speed: 12,15, 20, 25 and 35ns Battery backup: 2V data retention High-performance, low-power, CMOS double-metal | OCR Scan | MIL-STD-883 28-Pin MT5C6408 DS000026 T0D2117 | |
| 4HA5Contextual Info: 8K X 8 SRAM SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-38294 • MIL-STD-883 28-Pin DIP (D-15) FEATURES • High speed: 12, 15, 20, 25 and 35ns • Battery backup: 2V data retention • High-performance, low-power, CMOS double-metal | OCR Scan | MIL-STD-883 28-Pin MiL-STD-883 MT5C6406883C 4HA5 | |
| 2019A-1Contextual Info: £ÿj SGS-THOMSON M G »L[lC Tl® iQ © S M K 48S 74 VERY FAST CMOS 8K x 8 CACHE TAGRAM • 8 K x 8 CMOS SRAM WITH ONBOARD COMPARATOR - ADDRESS TO COMPARE ACCESS TIME: 20, 25, 35ns ■ FAST CHIP SELECT COMPARE ACCESS 10ns * MATCH OUTPUT WITH FAST TAG DATA TO | OCR Scan | VR0C1030 MK48S74 MK48S74 PSDIP28 PSOJ28 300mils 2019A-1 | |
| STK10C68
Abstract: STK10C68-M Plastic 28-pin 300 mil SOIC SIMTEK 
 | Original | STK10C68 STK10C68-M 200ns 100-Year 28-Pin STK10C68 years/106cycles) years/105cycles) 300-mil ML0006 Plastic 28-pin 300 mil SOIC SIMTEK | |
| Contextual Info: STK10C68 STK10C68-M SMD#5962-93056 8K x 8 nvSRAM QuantumTrap CMOS Nonvolatile Static RAM FEATURES DESCRIPTION • 25ns, 35ns, 45ns and 55ns Access Times • STORE to Nonvolatile Elements Initiated by Hardware • RECALL to SRAM Initiated by Hardware or | Original | STK10C68 STK10C68-M 200ns 100-Year 28-Pin STK10C68 years/106cycles) years/105cycles) 300-mil ML0006 | |
| cmos vs ttl
Abstract: smd NE STK10C68 
 | Original | STK10C68 200ns 100-Year 28-Pin STK10C68 cmos vs ttl smd NE | |
| STK11C68
Abstract: STK11C68-M 
 | Original | STK11C68 STK11C68 28-pin STK11C68-M | |
| STK10C68
Abstract: STK10C68-M 
 | Original | STK10C68 STK10C68-M 200ns 100-Year 28-Pin STK10C68 300-mil ML0006 | |
| cmos SRAM 35ns 8k X 8 dip
Abstract: Plastic 28-pin 300 mil SOIC SIMTEK STK11C68 STK11C68-M 
 | Original | STK11C68 STK11C68-M STK11C68 years/106cycles) years/105cycles) 300-mil ML0007 cmos SRAM 35ns 8k X 8 dip Plastic 28-pin 300 mil SOIC SIMTEK | |
| stk11c68
Abstract: cmos SRAM 35ns 8k X 8 dip 
 | Original | STK11C68 STK11C68-M 200ns 100-Year 28-Pin STK11C68 300-mil ML0007 cmos SRAM 35ns 8k X 8 dip | |
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| cmos SRAM 35ns 8k X 8 dip
Abstract: 7C166 CY7C161 CY7C162 CY7C164 CY7C166 CY7C185 CY7C186 CY7C187 7C164 
 | Original | CY7C161 CY7C162 CY7C164 CY7C166 CY7C185 CY7C186 CY7C187 Cypr507/1 200mA cmos SRAM 35ns 8k X 8 dip 7C166 CY7C161 CY7C162 CY7C164 CY7C166 CY7C185 CY7C186 CY7C187 7C164 | |
| M48T08
Abstract: DS1743 STK1743 
 | Original | STK1743 STK1743 M48T08 DS1743 | |
| Contextual Info: AUSTIN SEMICONDUCTOR, INC. SRAM 8K MT59 6428JL8.3£ 8 K x 8 SRAM X 8 SRAM AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-38294, Class M • MIL-STD-883, Class B • Radiation tolerant consult factory FEATURES • High speed: 12, 15, 20, 25 and 35ns • Battery backup: 2V data retention | OCR Scan | MIL-STD-883, MIL-STD-883 0000S53 10change | |
| STK15C68Contextual Info: STK15C68 8K x 8 AutoStore nvSRAM High Performance CMOS Nonvolatile Static RAM FEATURES DESCRIPTION • Nonvolatile Storage Without Battery Problems • Directly Replaces 8K x 8 static RAM, Battery Backed RAM or EEPROM • 25ns, 35ns and 45ns Access Times | Original | STK15C68 200ns STK15C68 | |
| STK15C68Contextual Info: STK15C68 8K x 8 AutoStore nvSRAM High Performance CMOS Nonvolatile Static RAM FEATURES DESCRIPTION • Nonvolatile Storage Without Battery Problems • Directly Replaces 8K x 8 static RAM, Battery Backed RAM or EEPROM • 25ns, 35ns and 45ns Access Times | Original | STK15C68 200ns STK15C68 | |
| M48T0Contextual Info: STK1743 nvTime 8K x 8 AutoStore™ nvSRAM with Real-Time Clock PRELIMINARY FEATURES DESCRIPTION • Data Integrity of Simtek nvSRAM Combined with Full-Featured Real-Time Clock The Simtek STK1743 DIP module houses 64Kb of nonvolatile static RAM, a real-time clock RTC with | Original | STK1743 24-Hour 100-Year 30-Day STK1743 ML0011 M48T0 | |
| Contextual Info: STK15C68 8K x 8 AutoStore nvSRAM High Performance CMOS Nonvolatile Static RAM SlfflTEK FEATURES DESCRIPTION • Nonvolatile Storage Without Battery Problems • Directly Replaces 8K x 8 static RAM, Battery Backed RAM or EEPROM • 25ns, 35ns and 45ns Access Times | OCR Scan | STK15C68 200ns STK15C68 fl274flfl? fl274flà | |
| Contextual Info: MICRON TECHNOLOGY INC SSE ]> • b l l l S M T GQQSb4S Ö7Ü « f l R N MT5C6408 883C 8K X 8 SRAM I^ IC R Ü N . *—T"- Li i_-7 1 _1 " MILITARY SRAM 8K X 8 SRAM • • • • PIN ASSIGNMENT Top View) SMD 5962-38294, Class M JAN 5962-38294, Class B | OCR Scan | MT5C6408 MIL-STD-883, 28-Pin C-11A) MIL-STD-883 T5C6409883C | |
| STK12C68
Abstract: STK15C68 STK16C68 
 | Original | STK15C68 200ns 100-Year 28-Pin ML0009 STK15C68 Sn/15 STK12C68 STK16C68 | |
| Contextual Info: STK15C68 8K x 8 AutoStore nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM FEATURES DESCRIPTION • Nonvolatile Storage without Battery Problems • Directly Replaces 8K x 8 Static RAM, BatteryBacked RAM or EEPROM • 25ns, 35ns and 45ns Access Times • STORE to Nonvolatile Elements Initiated by | Original | STK15C68 200ns 100-Year 28-Pin ML0009 STK15C68 | |