CIAS Search Results

BYW27

Contextual Info: BYW27-50GP THRU BYW27-1000GP GLASS PASSIVATED JUNCTION PLASTIC MINIATURE RECTIFIER Voltage - 50 to 1000 Volts Current -1.0 Ampere FEATURES ♦ High temperature metallurgically bonded con­ structed rectifiers ♦ Plastic package has Underwriters Lab^ oratory Flammability Ciassification 94V-0

Contextual Info: N AMER PHI LIP S/ DIS CR ETE b'lE » bbSa'm DOaiSim T 73 BLW99 H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in ciass-AB and B operated high-power mobile transmitting equipment in the h.f. band. The transistors are resistance-stabilized and are guaranteed to withstand severe load mismatch conditions.

M5M4V16S30CTP

Abstract: M5M4V16S40CTP M5M4V16s30 M5M4V16S30CTP-10
Contextual Info: •SUPER HIGH SPEED DYNAMIC RAMs Memory Ciassfication capacity Memory Configuration 4Mx4 2Mx8 16M 4Mx4 2Mx8 Synchronous Dynamic RAM 1Mx16 16Mx4 64M BMxS 4Mxl6 Max. access time Typ. :■ T»!» Ifo. power dissipation . ns 5 6 B 5 6 8 8 8 9 8 8 9 8 8 9 6 7

BA314

Abstract: IEC134 UBC671 bb53
Contextual Info: N AUER PH IL IP S/ DIS CR ETE blE D b b S B ^ l A oosbiso a?i BA314 LOW VOLTAGE STABISTOR Silicon planar epitaxial diode in DO-35 envelope. This diode is intended fo r low voltage stabilizing e.g. bias stabilizer in ciass-B o u tp u t stages, clipping, clamping and meter protection.

RZ2833B45W

Contextual Info: N AMER P H I L I P S / D I S C R E T E ObE D _1_L bbSB^l • 0015551 1 RZ2833B45W r- ss-is PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended for use in a common-base ciass-C broadband pulse power amplifier with a frequency range of 2,8 to 3,3 GHz.

RTC144

Abstract: LKE2015T LTE21015R
Contextual Info: N AUER PHILIPS/DISCRETE ObE D • ^53=131 G O I M ^ MAINTENANCE TYPE 1 ■ LKE20Ï5T for new design use LTE21015R T - 2 3 - 0 5 - M ICROW AVE LINEAR POW ER TRANSISTO R N-P-N transistor for use in a common-emitter ciass-A linear power amplifier up to 2 GHz.

IEC134

Abstract: LAE4002S
Contextual Info: I-« N AMER P H IL IP S /D IS C R E T E OLE D • hbSBTBl 0014*107 T ■ LAE4002S MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for common-emitter ciass-A linear power amplifiers up to 4 GHz. Diffused emitter . ballasting resistors, self-aligned process entirely ion implanted and gold sandwich metallization ensure

BF470

Abstract: BF472 BF471 BF469 54t1
Contextual Info: I I b3E T> m bhS3TE4 DG742Ô2 ÖTM « S IC 3 BF470 BF472 NAPC/PHILIPS SEMICON] FOR D ETA ILED INFO R M ATIO N SEE THE LATEST ISSUE OF HANDBOOK SC06 OR DATASHEET SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in a plastic envelope Intended fo r ciass-B video o u tp u t stages in television receivers

Contextual Info: LOW VOLTAGE CERAMIC CHIP CAPACITORS CIASS 2 CNC 4 . CNC 6 . CNC 7 . CNC 12 Modele normaUse/Standard mode! CNC 12 CNC V CNC 12A CNC VA CNC 4 CNC 4A | CNC 6 CNC6A CNC 7 CNC 7 A ZEE Option etamage/Tinned option ic TcT :E Conditionnement possible//V«.y/fcfe packaging

transistor M7A

Abstract: philips 33m PZ1418B30U PZ1721B25U PZ2024B20U epsilam 10
Contextual Info: PZ1418B30U PZ1721B25U JÌ P Z 2 0 2 4 B 2 0 U PHILIPS INTERNATIONAL SbE D • 711GÛ2b DCmb47fl ITH ■ PHIN MICROWAVE POWER TRANSISTORS FOR WIDEBAND AMPLIFIERS NPN transistors fo r use in common-base, ciass-B, broadband am plifiers under CW conditions in

Contextual Info: N AMER PH IL IPS /DISCR ETE b b S a ^ l OOEfi^Ql 2m BLV10 b^E » IAPX V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in ciass-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and

b83006

Abstract: diode schottky b83006 B83-006 diode b83
Contextual Info: E R B83-006 2A : Outline Drawings I SCHOTTKY BARRIER DIODE : Features • vP IS/jv : Marking Low VF Ä 7 - 3 - K : Sit Color code : Super high speed switching. High reliability by planer design Abridged type name 3LŒ? 7 * • E IS I : Applications Voltage ciass

Contextual Info: RGP15A THRU RGP15M MINIATURE GLASS PASSIVATED JUNCTION PLASTIC FAST SWITCHING RECTIFIER Voltage - 50 to 1000 Volts Current - 1.5 Amperes FEATURES ♦ High temperature metallurgically bonded con­ structed rectifiers ♦ Plastic package has Underwriters Laboratory Flammability Ciassification 94V-0

ERB83-006

Abstract: Collmer SC A349
Contextual Info: E R B83-006 2A : Outline Drawings I SCHOTTKY BARRIER DIODE : Features • vP IS/jv : Marking Low VF Ä 7 - 3 - K : Sit Color code : Super high speed switching. High reliability by planer design Abridged type name 3LŒ? 7 * • E IS I : Applications V oltage ciass

condensateur ceramique 104

Abstract: 93133
Contextual Info: CONDENSATEURS CHIPS CERAMIQUE CLASSE 1 CERAMIC CHIP CAPACITORS CLASS I GENERAL INFORMATION COMPOSITION Les condensateurs de ciasse 1 NPO sont realises avec un dielectnque a base d'oxyde de titane (Ti 0,) modifie pour l’essentiel par de l’oxyde de magnesium Mg 0 (cas des ceramiques blanches) ou un oxyde de

A348

Abstract: ERB83-006 jv marking a349
Contextual Info: E R B83-006 2A : Outline Drawings I SCHOTTKY BARRIER DIODE : Features • vP IS/jv : Marking Low VF Ä 7 - 3 - K : Sit Color code : Super high speed switching. High reliability by planer design Abridged type name 3LŒ? 7 * • E IS I : Applications V oltage ciass

Contextual Info: N ANER PHILIPS/DISCRETE DbE D tab53^31 0015243 S RZ2833B15W r - 33-/3 MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base ciass-C broadband pulse power amplifier, operating in the 2.8 to 3.3 GHz frequency range.

Contextual Info: N AMER PHILIPS/DISCRETE DbE D • ^ 5 3 1 3 1 QD15E37 7 A RZ2731B60W PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base ciass-C broadband pulse power amplifier w ith a frequency range o f 2,7 to 3,1 GHz.

t6060

Abstract: T-6060
Contextual Info: OPTEK TECHNOLOGY INC 40E d • L ? ciasaG oGG^ai a ta ■ otk I c iv Product Bulletin OTC1015 August 1990_ NPN Power Darlington Die "T'33 ^ Types OTC1015, OTC6030, OTC6050 450V, 20A Schematic Note 7 Base 1 o i - K Q1

ERB83-006

Abstract: Collmer Semiconductor
Contextual Info: ERB83-006 2A • Outline Drawing SCHOTTKY BARRIER DIODE ■ Features • Lo w V f Color code : White • Super high speed switching • High reliability by planer design Abridged type name ■ Applications Voltage ciass • High speed power switching CD ▼

2 LOIF

Abstract: 017L
Contextual Info: 7764 I ë 1.0 MONITOR PART NUMBER 6732-01 CM 9 9.0 CIASSIFICATION OSCILLATOR. CRYSTAL. VOLTAGF CONTRO!IFU m CO s i 3.0 ELECTRICAL CHARACTERISTICS NOTE 1 3.1 NOMINAL FREQUENCY 12.352 MHz 3.1.1 CALIBRATION TOLERANCE 3.1.2 ADJUSTMENT RANGE 3.1.2.1 ADJUSTMENT RESOLUTION

Contextual Info: ERICSSON ^ 20193 60 Watts, 1800 -1900 MHz Cellular Radio RF Power Transistor <preiiminary PTB Key Features Description The 20193 is a ciass AB, NPN, common emitter RF Power Tran­ sistor intended for 26 VDC operation across the 1.8 - 1 . 9 GHz frequency band. It is rated at 60 Watts minimum output power

ivo ne 202

Abstract: RS3F3 22PP bsecm 3CKH 50slb
Contextual Info: SIA thru SIM FEATURES t Rating to 1OOOV PRV l l - For surface mounted applications Reliable low cost construction utilizing molded plastic technique l Plastic material has Underwrites Laboratory l flammability ciasslfication 94V-0 Lead sclderabie per MIL-STD-202 Method 206

Contextual Info: MOLDED CERAMIC CAPACITORS CLASS I TCE 61.62.63.64 Dieleetrique Ceramiqae ciasse 1 Technologic Chins mulUcoudie Ciasse Coef. de temperature Tension nominate URc _ Tension de tenue Tangente 6 a 1 MHz ! 5 pF ^ C r < 50 pF 50 pF < CR< 1 000 pF _ _ Tangente 6 a I kHz