TAB53 Search Results

Contextual Info: N ANER PHILIPS/DISCRETE DbE D tab53^31 0015243 S RZ2833B15W r - 33-/3 MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base ciass-C broadband pulse power amplifier, operating in the 2.8 to 3.3 GHz frequency range.

Contextual Info: N AMER PHILIPS/DISCRETE tab53T31 OOSDESO S • BSE D BUK426-200A BUK426-200B PowerMOS transistor T - 3 7- I/ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in Switched Mode Power Supplies

000337E

Abstract: ECG747
Contextual Info: P H IL IP S ^53=120 DÜD331ti h 17E D E C G INC m T -7 7 ~ 0 7 ~ J / ECG747 LOW-LEVEL VIDEO DETECTOR semiconductors AFT BUFFER I — o u ip y i L L TUNEO CIRCUIT E C G 7 4 7 îs a n integrated c ir c u it featuring very lin e a r video c h a ra c te ristics , w ide bandw idth.

Contextual Info: N AMER P H I L I P S / D I S C R E T E 25E D bbS3T31 0022537 T • BYV30 BEHItS 7 = 0 3 - 1 7 ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in D O —4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery characteristic,