BYW27 Search Results

BYW27-100GP

Abstract: BYW27-800GP DO-204AL JESD22-B102 J-STD-002 BYW27-200GP
Contextual Info: BYW27-100GP thru BYW27-800GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat * Glass-plastic encapsulation

Contextual Info: FAGOR 3MSR32S QDDD71S DQ1 • F G R S S7E » BYW27-50 FAGOR ELECTRONICS BYW27-1.000 'T, -o\-l3 1 Amp. Silicon! Dimensions in mm. DO-15 F-126 58 A 2 Plastic Voltage 50 to 1.000 V. Current 1.0 A. at 70 °C. • Low cost Mounting instructions 1. Min. distance from body to soldering point,

BYW27

Contextual Info: BYW27-50GP THRU BYW27-1000GP GLASS PASSIVATED JUNCTION PLASTIC MINIATURE RECTIFIER Voltage - 50 to 1000 Volts Current -1.0 Ampere FEATURES ♦ High temperature metallurgically bonded con­ structed rectifiers ♦ Plastic package has Underwriters Lab^ oratory Flammability Ciassification 94V-0

BYW27-100GP

Abstract: BYW27-200GP
Contextual Info: BYW27-100GP thru BYW27-800GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction ed* t n e Pat * Glass-plastic encapsulation technique is covered by

btw27

Abstract: smd WTs 35 btw 27 REA 471 BYW 22 bridge rectifier
Contextual Info: GENL INSTR/ POWER ESE D • 3fl^ai37 Q O Q 3 b ñ b 3 ■ T -01-13 BYW27-50GP THRU BYW27-1000GP GLASS PASSIVATED JUNCTION PLASTIC MINIATURE RECTIFIER 50 to 1000 Volts - 1.0 Voltage Current Ampere FEATURES ♦ High temperature metallurgical^ bonded con­ structed rectifiers '

Contextual Info: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com BYW27-50 - BYW27-1000 SILICON RECTIFIERS

Contextual Info: BYW27-50 . BYW27-1000 BYW27-50 . BYW27-1000 Si-Rectifiers – Si-Gleichrichter Version 2009-10-16 Nominal current Nennstrom -0.1 5.1-0.1 Type +0.5 62.5 -2.5 Ø 2.6 Ø 0.77±0.07 Dimensions - Maße [mm] 1A Repetitive peak reverse voltage Periodische Spitzensperrspannung

Contextual Info: FA G O R^ BYW27-50 BYW27-1.000 1 Amp. Silicon Rectifier Diodes Dimensions in mm. DO-15 Plastic Voltage 50 to 1.000 V Current 1.0 A. at 70 °C. ¿35«! S8.5 min 1Glass passivated junction Mounting instructions 1High current capability 1. Min. distance from b o d y to so ld erin g point,

diode BY127 specifications

Abstract: GE diode 1N5061 diode by127 GP 524 DIODE diode cross reference 1N4245 diode 1n5392 GP+524+DIODE BYW27-40Q D0201AD 1N4245
Contextual Info: 6ENL INSTR/ POWER 2SE D • 30=10137 00G3315 1 ■ 7^ W -& Ô STANDARD SILICON RECTIFIERS continued • 1.0 »(A) DO 11 PKG TYPE D041/D015 D015 II I D0204/VP D041 Sr I Il li VRRM (volts) - 50 GP10A BYW27-50 G 1A 1N4001*/ M100A 100 GP10B BYW27-100 G1B 1N4002*/

BYW27

Abstract: BYW27-1000 BYW27-50
Contextual Info: BYW27-50 . BYW27-1000 1 Amp. Glass Passivated Junction Rectifier Dimensions in mm. DO-15 Plastic Voltage 50 to 1000 V. Current 1.0 A. at 70 °C. 6.35 ± 0.2 58.5 ± 0.5 Mounting instructions 1. Min. distance from body to soldering point, 4 mm.

BYW27-1000

Abstract: BYW27-50 BYW 200
Contextual Info: BYW27-50 - BYW27-1000 SILICON RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 1.0 Amperes DO - 41 FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop 1.00 25.4 MIN. 0.107 (2.7)

BYW27-1000

Abstract: BYW27-50
Contextual Info: BYW27-50 - BYW27-1000 SILICON RECTIFIERS PRV : 50 - 1000 Volts Io : 1.0 Amperes DO - 41 FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0)

BYW27-100

Abstract: BYW27-1000 BYW27-200 BYW27-400 BYW27-50 BYW27-600 DO-204AL
Contextual Info: BYW27-50 . BYW27-1000 BYW27-50 . BYW27-1000 Si-Rectifiers – Si-Gleichrichter Version 2005-08-26 Nominal current Nennstrom -0.1 5.1 -0.1 Type 62.5 ±0.5 Ø 2.6 1A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50.1000 V Plastic case

Contextual Info: BYW27-100GP thru BYW27-800GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier application structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current

SB550 1n5402

Abstract: BY2000 P1000J p1000M p1000s BY1800 1N4002 1N4003 SB840 1N4005
Contextual Info: 3A 5A 5/8 A 12 A 7.5±0.1 ±0.5 62.5 7,5±0.1 62.5±0.5 Type 7.5 ±0.1 Type ±0.5 6.3±0.1 Type 62.5±0.5 5.1-0.1 Type +0.5 62.5 -2.5 3.9 62.5 Voltage [V] Diodes / Rectifiers Standard Recovery 2A 5/6 A 10.15 A 15/20 A 25 A 30 A Current 1N4001 BYW27-50 1N5391

BYW21

Abstract: 58A2 BYW27 BYW27-50
Contextual Info: 3MSR32S GÜDD71S DGT « F G R S S7E » BYW27-50 FAGOR FAGOR ELECTRONICS BYW27-1.000 'T, -o\-l3 1 Amp. Silicon ! Dimensions in mm. DO-15 F-126 58 A 2 Plastic Voltage 50 to 1.000 V. Current 1.0 A. at 70 °C. • Low cost Mounting instructions • Diffused junction

diode BY127

Abstract: BY127 diode diode cross reference 1N4007 diode zener 1n4002 diode M100J zener diode cross reference P diode by127 g1g diode GP15M "cross reference" 1N4007 ZENER DIODE
Contextual Info: 6ENL INSTR/ POWER 2SE D • 30=10137 00G3315 1 ■ 7^ W - & Ô STANDARD SILICON RECTIFIERS continued • 1.0 »(A) DO11 PKG TYPE D041/D015 D015 II I D0204/VP Il li D041 I Sr VRRM (volts) - 50 GP10A BYW27-50 G1A 1N4001*/ M100A 100 GP10B BYW27-100 G1B 1N4002*/

Contextual Info: BYW27-50 . BYW27-1000 1.0 Amp. Glass Passivated Junction Rectifier Current 1.0 A to 70º C Voltage 50 to 1000V DO-204AC DO-15 R FEATURES • Glass passivated chip junction • Hyperectifier structure for high reliability • Cavity-free glass-passivated junction

BYW27

Contextual Info: BYW27-50 . BYW27-1000 1 Amp. Glass Passivated Junction Rectifier DO-15 Plastic Voltage 50 to 1000 V Current 1.0 A at 70 °C ø3.05±0.1 ø0.8±0.05 Dimensions in mm. R 6.35±0.2 58.5±0.5 • Glass passivated junction Mounting instructions 1. Min. distance from body to soldering point,

BYW27-200

Abstract: BYW27-400 BYW27-50 BYW27-600 DO-204AL BYW27-100 BYW27-1000 BYW27
Contextual Info: BYW27-50 . BYW27-1000 BYW27-50 . BYW27-1000 Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2009-10-16 Nominal current Nennstrom -0.1 5.1-0.1 Type +0.5 62.5 -2.5 Ø 2.6 Ø 0.77±0.07 Dimensions - Maße [mm] 1A Repetitive peak reverse voltage

BYW27

Abstract: BYW27-1000 BYW27-50
Contextual Info: BYW27-50 . BYW27-1000 1 Amp. Glass Passivated Junction Rectifier Dimensions in mm. DO-15 Plastic Voltage 50 to 1000 V. Current 1.0 A. at 70 °C. 6.35 ± 0.2 58.5 ± 0.5 Mounting instructions 1. Min. distance from body to soldering point, 4 mm.

Contextual Info: BYW27-50 . BYW27-1000 Silicon Rectifiers Silizium Gleichrichter Version 2004-10-01 Nominal current Nennstrom -0.1 Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…1000 V Plastic case Kunststoffgehäuse 5.1 -0.1 Type 62.5 ±0.5 Ø 2.6

Contextual Info: BYW27-50 . BYW27-1000 1.0 Amp. Glass Passivated Junction Rectifier Current 1.0 A to 70º C Voltage 50 to 1000V DO-204AC DO-15 R FEATURES • Glass passivated chip junction • Hyperectifier structure for high reliability • Cavity-free glass-passivated junction

BYW27-100GP

Abstract: BYW27-200GP
Contextual Info: BYW27-100GP thru BYW27-800GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat * Glass-plastic encapsulation