CHARACTERISTIC Search Results

TLG145K

Abstract: TLR145K TLR144K TLR143 TLR143K toshiba suffix TLR146K TLG147K TLR146 TLG143K
Contextual Info: TOSHIBA TLG14D K,TLR14D K TOSHIBA LED LAMP TLG143K, TLG144K, TLG145K, TLG147K, TLR140K TLR143K, TLR144K, TLR145K, TLR146K, TLR147K LED LAMP WITH BRACKET MAXIM UM RATINGS Ta= 25°C CHARACTERISTIC Forward Current RED GREEN Reverse Voltage RED Power Dissipation

C 34 F

Abstract: 1SV274 D234
Contextual Info: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV274 C A T V T U N IN G . • • • • High Capacitance Ratio : C2V / C25V = 12.5 Typ. Low Series Resistance : rs = 0.6f2 (Typ.) Excellent C-V Characteristics, and Small Tracking Error. Small Package

Contextual Info: SILICON MONOLITHIC BIPOLAR LINEAR INTEGRATED CIRCUIT TA4000F VHF-UHF WIDE BAND AMPLIFIER APPLICATIONS FEATURES • Band W id th 700MHz M in. @ 3 dB dow n • Low Noise 4dB (Typ.) @ f = 400MHz • Small Package M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: TO SHIBA 1SS315 TOSHIBA DIODE UHF BAND M IXER APPLICATIONS. 1 SS31 5 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm +0.2 .1 .2 5 -0 . il Nh ÖÖ + 1 M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Maximum (Peak) Reverse Voltage Forward Current Junction Temperature

D945 TRANSISTOR

Abstract: d945
Contextual Info: UC1842A/3 A/4A/5 A UC2842A/3A/4A/5A UC3842A/3A/4A/5A U IM IT R O D E Current Mode PWM Controller DESCRIPTION Low Start Up Current <0.5mA Trimmed Oscillator Discharge Current Automatic Feed Forward Compensation Pulse-by-Pulse Current Limiting Enhanced Load Response Characteristics

Contextual Info: TOSHIBA TC4S11F TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4S11F 2 INPUT N A N D GATE The TC4S11F is 2-input positive logic NAND gates. Gate output with inverter buffer improve the inputoutput characteristics and even if the load capacitance

ISS226

Abstract: ISV99 2sk117 ISV128 2sk toshiba 302V marking A3 amplifier 2SK30ATM u marking amplifier
Contextual Info: TOSHIBA {DI SCRE TE /O PT O} Sb D E ^ T D T T E S D □□□7103 / Í 9097250 '-L ^ TOSHIBA DI S C R E T E /O P T O 5bC 0 7 T Q 3 D'^. ¿ . c; . . V FET Type Application Electrical characteristic (Ta *= 25°C) V d sx V V * * gdo grd * Ig , I d * (mA) Po(mW)

TIM1414-4LA-371

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM1414-4LA-371 RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Linear Gain SYMBOL PldB Drain Current Power Added Efficiency 3rd Order Intermodulation

2SC994

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC994 Unit in mm VHF BANO POWER AMPLIFIER APPLICATIONS. 09.Z9UAX. FEATURES : Output Power '• Po=0.95W Min. ( f=l75MHz, VCC=13.5V, Pi=40mW ) Í¿Q.45 05 .C 8 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING vCBO

c7805

Abstract: C7812 IR Sensor TK 1836 c7815 7812A UC7915 voltage regulator 7812A features 7812A voltage regulator UC494 UC3704
Contextual Info: y lN T E O R A T E D C IR C U ITS UNITRODE Power Supply Controls PWM Performance Chart SWITCHING REGULATOR CONTROL ICs N o te : M o s t s e rie s a v a ila b le s c re e n e d to /8 8 3 B Rev. C. / VOLTAGE MODE PWM’s TYPE PERFORMANCE CHARACTERISTICS / /////tf/

2SC31

Abstract: m15t
Contextual Info: 2SC31 22 SILICQN NPN EPITAXIAL PLANAR TYPE t r a n s is t o r T V V H F RF A M P LIF IE R A PP LIC A T IO N S . FEATURES : • High Gain : Gpe = 24dB Typ. (f=200M Hz) • Low Noise : NF = 2.0dB (Typ.) (f=200MHz) • Excellent Forward AGC Characteristics.

TF1100

Abstract: "IGBT Driver" Driver IGBT GTR TF1202
Contextual Info: I/O Interface & D river M odules F2 Type No. • 1 s ÿ Characteristics Package: SIP Unit In mm BVs/AC (V) Width Height Thickness TF1106 AC INPUT V in= 70 ~ 140V , Iout=1 6mA 1500 40 MAX 21 MAX TF1107 DC INPUT V in=12 ~30V , lour=16mA 1500 40 MAX 21 MAX

TIM0910-20

Contextual Info: TIM0910-20 FE A TU R E S : • HIGH POWER ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE P 1dB = 43.0 dBm at 9.5 GHz to 10.5GHz ■ HIGH GAIN GldB B 7 0 dB at 9 5 GHz * 10 5 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25°C CHARACTERISTIC

pnp transistor 800v

Contextual Info: 6. Transistor C h a racteristics 6.1. Switching Characteristics In this section, we will look into the transis­ to r’s switching characteristics. When a pulse is applied to the circuit shown in Figure 1, the resulting base and collector waveforms are as

TLC2425

Abstract: TLE24251
Contextual Info: TLE2425, TLE2425Y PRECISION VIRTUAL GROUNDS SLOSD65B - MARCH 1991 - REVISED AUGUST 1995 Excellent Regulation Characteristics - Output Regulation -4 5 nV Typ at l0 = 0 to -1 0 mA +15 nV Typ at Iq - 0 to +10 mA - Input Regulation = 1.5 ¿iV/V Typ Low-lmpedance Output. . . 0.007512 Tÿp

2sc5464

Contextual Info: T O SH IB A 2SC5464 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5464 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S 2 ie l 2 = 12dB f= lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

AC551

Contextual Info: TOSHIBA TLMM525A1 TOSHIBA LED DO TM ATRIX M ODULE TLMM525A1 1. FEATURES • • • • • 2. Thin-size and light weight High-speed operation-30MHz Superior radiation characteristics Display function equivalent to CRT of a personal computer with a simple interface

TLCS-90

Contextual Info: TO SH IBA TMP90C846 CMOS 8-BIT MICROCONTROLLER TMP90C846F 1. OUTLINE AND CHARACTERISTICS The TMP90C846 is an advanced 8-bit microcontroller developed for application in the control of HDD/FDD high-speed mechanisms. The built-in functions include a high­ speed A/D converter minimum sampling rate: 400ns @ 10MHz with an external start

2SC3297

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1305 POWER AMPLIFIER APPLICATIONS. Unit in mm CAR RADIO AND CAR STEREO OUTPUT STAGE APPLICATIONS. 0 3 .2 ± 0.2 FEATURES: Ytfi . Good Linearity of hpg ^ ♦ Complementary to 2SC3297 MAXIMUM RATINGS Ta=25°C CHARACTERISTIC + 0.25

1SS239

Contextual Info: SILICON EPITAXIAL SCHO TTKY BARRIER TY P E DIODE C A T V /U H F /V H F MIXER APPLICATIONS. M A X IM U M RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Reverse Voltage Forward C urrent Junction Tem perature Storage Tem perature Range Vr Ip Tj Tstg RATING 6 30 125

2SK528

Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ff-MOS INDUSTRIAL APPLICATIONS Unit in mm 7.0 1 J RATING 2 Vd s x 400 V vgss ±20 V DC Id Pulse idp 4 Drain Power Dissipation (Tc=25°C) Pd Channel Temperature Tch Storage Temperature Range Tstg CHARACTERISTIC

Contextual Info: TOSHIBA HN2C11FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 2 C 1 1 FU VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS U n it in mm 2.1 + 0.1 • Including Two Devices in U S6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

2sc1764

Contextual Info: 2SC1764 SILICON NPN EPITAXIAL PLANAR TYPE 2 ~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm FEATURES : . Specified 28V, 28MHz Characteristics : Output Power : Po=80Wpjjp : Minimum Gain : Gpe=14.5dB : Efficiency : ’i'c=40%(Min.)

F585

Contextual Info: February 6, 1997 TIM5964-16L-151 1•RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Pow er at 1dB SYMBOL CONDITION P id B Ta= 25 °C MIN. TYP. MAX. UNIT 41.5 42.5 6.0 7.0 — dBm Com pression Point Pow er G ain at 1dB G id B Com pression Point V d s = 10V