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CGH35 Datasheets (9)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
CGH35015F	Cree	15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX	Original	PDF	724.71KB	9
CGH35030F	Cree	30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX	Original	PDF	672.77KB	8
CGH35060F2	Wolfspeed	60W GAN HEMT 28V 4.0GHZ FLANGE	Original	PDF	1.34MB
CGH35060F2	Wolfspeed	60W GAN HEMT 28V 4.0GHZ FLANGE	Original	PDF	1.34MB
CGH35060P2	Wolfspeed	60W, GAN HEMT, 28V, DC-4.0GHZ, F	Original	PDF	1.34MB	11
CGH351T500V2C	Cornell Dubilier	Aluminum Capacitors, Capacitors, CAP ALUM 350UF 500V SCREW	Original	PDF		3
CGH351T500V2C	Mallory Capacitor	Type CGH - Computer Grade Capacitors	Original	PDF	55.53KB	1
CGH35240F	Wolfspeed	240W GAN HEMT 28V 3.1-3.5GHZ FET	Original	PDF	1.35MB
CGH35240F	Wolfspeed	240W GAN HEMT 28V 3.1-3.5GHZ FET	Original	PDF	1.35MB

CGH35 Price and Stock

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Essentra Components RCGH-35 Racks & Rack Cabinet Accessories Card Guide,Snap In,Natural,3.5 in Lg
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	RCGH-35		1,418			1 $0.89 10 $0.73 100 $0.56 1000 $0.45 10000 $0.45	Buy Now
RS	RCGH-35	Bulk		4 Weeks	500	1 - 10 - 100 - 1000 $0.64 10000 $0.54	Get Quote
Bisco Industries	RCGH-35		504			1 - 10 - 100 - 1000 - 10000 -	Buy Now
DB Roberts	RCGH-35					1 - 10 - 100 - 1000 - 10000 -	Get Quote
MACOM CGH35015F-AMP M/A-COM Technology Solutions TEST FIXTURE, 15W, 3.3-3.9GHz
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CGH35015F-AMP					1 - 10 $1736.28 100 $1736.28 1000 $1736.28 10000 $1736.28	Get Quote
MACOM CGH35240F-AMP M/A-COM Technology Solutions AMPLIFIER, 3.1-3.5GHz, INCLUDE CGH35240F
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CGH35240F-AMP					1 - 10 $2889.63 100 $2889.63 1000 $2889.63 10000 $2889.63	Get Quote
MACOM CGH35060F2 GaN FETs 60W, 3.5GHz, 830185F2, GaN HEMT, FLANGE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CGH35060F2					1 - 10 - 100 $342.19 1000 $342.19 10000 $342.19	Get Quote
MACOM CGH35240F GaN FETs GaN HEMT 3.1-3.5GHz, 240 Watt
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CGH35240F					1 - 10 - 100 $831.39 1000 $831.39 10000 $831.39	Get Quote

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CGH35 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide	Original	cgh35015 cgh3501 35015p	PDF
Contextual Info: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied	Original	cgh35030f cgh3503	PDF
Contextual Info: PRELIMINARY CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied	Original	cgh35030f cgh3503	PDF
Contextual Info: PRELIMINARY CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities,	Original	cgh35015 cgh3501 35015p	PDF
Tantalum Abstract: CGH35060F-TB j121 10UF 470PF CGH3506 CGH35060 CGH35060F CGH35060-TB s-parameter Contextual Info: CGH35060F 60 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.9GHz WiMAX and	Original	cgh35060f cgh3506 tantalum cgh35060f-tb +6j121 10uf 470pf cgh35060 cgh35060-tb s-parameter	PDF
A 12-15 GHz High Gain Amplifier Abstract: HEADER RT Contextual Info: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied	Original	cgh35030f cgh3503 a 12-15 ghz high gain amplifier header rt	PDF
CGH35060 Abstract: CGH35060F Contextual Info: CGH35060F 60 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.9GHz WiMAX and	Original	cgh35060f cgh3506 10failure cgh35060	PDF
10UF Abstract: CGH35015 CGH35015F CGH35015-TB molex 5238 Contextual Info: CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities,	Original	cgh35015 cgh3501 35015p 12product +410uf cgh35015f cgh35015-tb molex 5238	PDF
transistor 8772 Abstract: 8772 transistor 470PF CGH35030F CGH35030-TB JESD22 Contextual Info: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied	Original	cgh35030f cgh3503 transistor 8772 8772 transistor +3470pf cgh35030-tb jesd22	PDF
Contextual Info: PRELIMINARY CGH35015 15 W, 3300-3900 MHz, 28 V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide	Original	cgh35015 cgh3501 35015s	PDF
Contextual Info: PRELIMINARY CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide	Original	cgh35015 cgh3501 35015s	PDF
transistor 8772 Abstract: Transistor C 4927 8772 transistor CGH35030F Contextual Info: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied	Original	cgh35030f cgh3503 transistor 8772 transistor c 4927 +18772 transistor	PDF
transistor E 13007 Abstract: 54-619 msl 9351 s-parameters cree marking information 00457 43251 Contextual Info: PRELIMINARY CGH35015S 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015S is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which	Original	cgh35015s cgh3501 transistor e 13007 54-619 +5msl 9351 s-parameters cree marking information 00457 43251	PDF
Contextual Info: PRELIMINARY CGH35060F 60 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.9GHz WiMAX and	Original	cgh35060f cgh3506	PDF

Contextual Info: CGH35060F2 / CGH35060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for	Original	cgh35060f2 cgh35060p2 cgh35060f2/p2 cgh3506 +2cgh35 060p2	PDF
CGH35060 Abstract: CGH35060F 470PF CGH3506 CGH35060F-TB CGH35060-TB JESD22 Contextual Info: CGH35060F 60 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.9GHz WiMAX and	Original	cgh35060f cgh3506 cgh35060 470pf +3cgh35060f-tb cgh35060-tb jesd22	PDF
transistor smd f36 Abstract: CGH35015 CGH35015F 10UF 33UF CGH35015-TB tRANSISTOR 2.7 3.1 3.5 GHZ cw Contextual Info: PRELIMINARY CGH35015F 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015F is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide	Original	cgh35015f cgh3501 transistor smd f36 cgh35015 +410uf 33uf cgh35015-tb transistor 2.7 3.1 3.5 ghz cw	PDF
Contextual Info: CGH35240F 240 W, 3100-3500 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH35240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35240F ideal for 3.1-3.5GHz S-Band radar	Original	cgh35240f 50-ohm cgh3524	PDF
RO4350B Abstract: CGH35030F CGH35030-TB 10UF 470PF Contextual Info: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied	Original	cgh35030f cgh3503 ro4350b cgh35030-tb +210uf 470pf	PDF
CGH35015 Abstract: CGH35015F CGH35015-TB JESD22 TRANSISTOR SMD 3401 Contextual Info: CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities,	Original	cgh35015 cgh3501 35015p cgh35015f +3cgh35015-tb jesd22 transistor smd 3401	PDF
CGH35240F Abstract: power transistor gan s-band CGH35240F-TB cgh35240 A114D CGH3524 CGH35240-TB JESD22 Contextual Info: ADVANCED INFORMATION CGH35240F 240 W, 2900-3500 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH35240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth	Original	cgh35240f 50-ohm cgh3524 power transistor gan s-band +5cgh35240f-tb cgh35240 a114d cgh35240-tb jesd22	PDF
Contextual Info: PRELIMINARY CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied	Original	cgh35030f cgh3503	PDF
Contextual Info: CGH35060F1 / CGH35060P1 60 W, 3.3-3.9 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal	Original	cgh35060f1 cgh35060p1 cgh35060f cgh3506 +2cgh35 060p1	PDF
cgh35240 Abstract: hemt .s2p HEADER RT Contextual Info: CGH35240F 240 W, 3100-3500 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH35240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35240F ideal for 3.1-3.5GHz S-Band radar	Original	cgh35240f 50-ohm cgh3524 cgh35240f-tb +3cgh35240 hemt .s2p header rt	PDF

CGH35 Search Results

CGH35 Datasheets (9)

CGH35 Price and Stock

Essentra Components RCGH-35

MACOM CGH35015F-AMP

MACOM CGH35240F-AMP

MACOM CGH35060F2

MACOM CGH35240F

CGH35 Datasheets Context Search

Tantalum

A 12-15 GHz High Gain Amplifier

CGH35060

10UF

transistor 8772

transistor 8772

transistor E 13007

CGH35060

transistor smd f36

RO4350B

CGH35015

CGH35240F

cgh35240