CGH35060F2 Search Results
CGH35060F2 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| CGH35060F2 |
|
60W GAN HEMT 28V 4.0GHZ FLANGE | Original | 1.34MB | |||
| CGH35060F2 |
|
60W GAN HEMT 28V 4.0GHZ FLANGE | Original | 1.34MB |
CGH35060F2 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: CGH35060F2 / CGH35060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for |
Original |
cgh35060f2cgh35060p2cgh35060f2/p2cgh3506+2 | |
|
Contextual Info: CGH35060F2 / CGH35060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for |
Original |
cgh35060f2cgh35060p2cgh35060f2/p2cgh3506+2 | |
CGH35060Contextual Info: CGH35060F2 / CGH35060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for |
Original |
cgh35060f2cgh35060p2cgh35060f2/p2cgh3506+3 |