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    Power Integrations 1SC2060P2A0-17

    Module: gate driver board; pin header; SCALE™-2; 1.7kV; 500kHz
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME 1SC2060P2A0-17 1
    • 1 $139.78
    • 10 $127.40
    • 100 $102.41
    • 1000 $102.41
    • 10000 $102.41
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    Avnet Americas 1SC2060P2A0-17 Bulk 20 Weeks 20
    • 1 -
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    • 100 $89.57
    • 1000 $88.31
    • 10000 $88.31
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    Newark 1SC2060P2A0-17 Bulk 17 1
    • 1 $167.07
    • 10 $148.72
    • 100 $105.23
    • 1000 $105.23
    • 10000 $105.23
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    EBV Elektronik 1SC2060P2A0-17 16 Weeks 20
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    Eaton Cutler-Hammer PDF23F0060P2YJ

    PDF2, 3P, 60A, 25KA/480V, PXR25LSI
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    RS PDF23F0060P2YJ Bulk 4 Weeks 1
    • 1 $2944.03
    • 10 $2944.03
    • 100 $2944.03
    • 1000 $2944.03
    • 10000 $2944.03
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    Eaton Cutler-Hammer PDF23G0060P2YW

    PDF2, 3P, 60A, 35KA/480V, PXR25LSI
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    RS PDF23G0060P2YW Bulk 4 Weeks 1
    • 1 $2983.65
    • 10 $2983.65
    • 100 $2983.65
    • 1000 $2983.65
    • 10000 $2983.65
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    Eaton Cutler-Hammer PDF23M0060P2WW

    PDF2, 3P, 60A, 65KA/480V, PXR25LSI
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    RS PDF23M0060P2WW Bulk 4 Weeks 1
    • 1 $3285.82
    • 10 $3285.82
    • 100 $3285.82
    • 1000 $3285.82
    • 10000 $3285.82
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    Eaton Cutler-Hammer PDF24K0060P2MJ

    PDF2, 4P, 60A, 50KA/480V, PXR25LSI
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    RS PDF24K0060P2MJ Bulk 4 Weeks 1
    • 1 $3355.69
    • 10 $3355.69
    • 100 $3355.69
    • 1000 $3355.69
    • 10000 $3355.69
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    060P2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: CGH35060F2 / 060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for


    Original     		cgh35060f2cgh35060p2cgh35060f2/p2cgh3506+2cgh35060p2 PDF

    Contextual Info: CGH35060F2 / 060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for


    Original     		cgh35060f2cgh35060p2cgh35060f2/p2cgh3506+2cgh35060p2 PDF

    CGH35060

    Contextual Info: CGH35060F2 / 060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for


    Original     		cgh35060f2cgh35060p2cgh35060f2/p2cgh3506+3cgh35060p2cgh35060 PDF