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    060P2 Search Results

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    060P2 Price and Stock

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    Acme Electric Corporation 62060-P2S02

    PWR XFMR TOROIDAL 25VA CHAS MT
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    DigiKey 62060-P2S02 Bulk 1,806 1
    • 1 $19.06
    • 10 $19.06
    • 100 $18.65
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    Power Integrations 1SC2060P2A0-17

    IC GATE DRVR HI/LOW SIDE MODULE
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    DigiKey 1SC2060P2A0-17 Box 26 1
    • 1 $152.88
    • 10 $134.53
    • 100 $91.04
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    Avnet Americas 1SC2060P2A0-17 Bulk 20 Weeks 20
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    • 100 $89.57
    • 1000 $88.31
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    Mouser Electronics 1SC2060P2A0-17 20
    • 1 $152.88
    • 10 $134.53
    • 100 $116.99
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    TME 1SC2060P2A0-17 1
    • 1 $148.07
    • 10 $137.51
    • 100 $135.03
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    EBV Elektronik 1SC2060P2A0-17 14 Weeks 20
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    Brady Worldwide Inc 5060P-2

    5060P-2 YEL 2" GOTHIC QUIK-ALIGN
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    DigiKey 5060P-2 Bulk 1
    • 1 $8.59
    • 10 $8.59
    • 100 $8.59
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    MACOM CGH35060P2

    RF MOSFET GAN HEMT 28V 440206
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    DigiKey CGH35060P2 Tray
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    Richardson RFPD CGH35060P2 1
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    Power Integrations 1EB2060P2A0

    EVAL BOARD FOR SCALE-2
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    DigiKey 1EB2060P2A0 Bulk 1
    • 1 $374.36
    • 10 $374.36
    • 100 $374.36
    • 1000 $374.36
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    060P2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: CGH35060F2 / 060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for


    Original
    CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2 PDF

    Contextual Info: CGH35060F2 / 060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for


    Original
    CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2 PDF

    CGH35060

    Contextual Info: CGH35060F2 / 060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for


    Original
    CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2 CGH35060 PDF