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    CGH35240 Search Results

    CGH35240 Datasheets (2)

    Wolfspeed
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    CGH35240F
    		Wolfspeed 240W GAN HEMT 28V 3.1-3.5GHZ FET Original PDF 1.35MB
    CGH35240F
    		Wolfspeed 240W GAN HEMT 28V 3.1-3.5GHZ FET Original PDF 1.35MB
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    CGH35240 Price and Stock

    MACOM

    MACOM CGH35240F

    GaN FETs GaN HEMT 3.1-3.5GHz, 240 Watt
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CGH35240F
    • 1 -
    • 10 -
    • 100 $831.39
    • 1000 $831.39
    • 10000 $831.39
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    Richardson RFPD CGH35240F 10
    • 1 -
    • 10 -
    • 100 $678.64
    • 1000 $678.64
    • 10000 $678.64
    		Buy Now

    MACOM CGH35240F-AMP

    M/A-COM Technology Solutions AMPLIFIER, 3.1-3.5GHz, INCLUDE CGH35240F
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CGH35240F-AMP
    • 1 -
    • 10 $2889.63
    • 100 $2889.63
    • 1000 $2889.63
    • 10000 $2889.63
    		Get Quote

    CGH35240 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: CGH35240F 240 W, 3100-3500 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH35240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35240F ideal for 3.1-3.5GHz S-Band radar


    Original     		cgh35240f50-ohmcgh3524 PDF

    CGH35240F

    Abstract: power transistor gan s-band CGH35240F-TB cgh35240 A114D CGH3524 CGH35240-TB JESD22
    Contextual Info: ADVANCED INFORMATION CGH35240F 240 W, 2900-3500 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH35240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth


    Original     		cgh35240f50-ohmcgh3524power transistor gan s-band+5cgh35240f-tbcgh35240a114dcgh35240-tbjesd22 PDF

    cgh35240

    Abstract: hemt .s2p HEADER RT
    Contextual Info: CGH35240F 240 W, 3100-3500 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH35240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35240F ideal for 3.1-3.5GHz S-Band radar


    Original     		cgh35240f50-ohmcgh3524cgh35240f-tb+3cgh35240hemt .s2pheader rt PDF

    Contextual Info: CGH35240F 240 W, 3100-3500 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH35240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35240F ideal for 3.1-3.5GHz S-Band radar


    Original     		cgh35240f50-ohmcgh3524cgh35240f-tb PDF