CEX 06 Search Results

G016

Contextual Info: MITSUBISHI TRANSISTOR MODULES ; QM300DY-2HB ! HIGH POWER SWITCHING USE INSULATED TYPE QM 300DY-2HB { •1C Collector current. 300A • V cex Collector-emitter voltage.1000V • hFE DC current gain. 750 • Insulated Type

QM300HA-2H

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM300HA-2H HIGH POWER SWITCHING USE INSULATED TYPE QM300HA-2H lc V cex Collector current. Collector-emitter voltage. DC current gain . hre Insulated Type UL Recognized 30QA j 1000V 75 Yellow Card No. E80276 <N

OM300HA-2H

Abstract: 1200 va ups circuit diagram OM300HA-2HB RM - 116 CR
Contextual Info: MITSUBISHI TRANSISTOR MODULES f QM300HA-2HB j HIGH POWER SWITCHING USE INSULATED TYPE OM300HA-2HB IC Collector current. V cex Collector-em itter vo lta g e DC current g a in . • hFE 300A 1200V 750 • Insulated Type • UL Recognized

QM100TF-HB

Abstract: QM100TF 100TF-HB
Contextual Info: ! QM100TF-HB \i MITSUBISHI TRAN SISTOR M ODULES I | HIGH POWER SWITCHING USE _ iNSULATED TYPE QM 100TF-HB • lc • V cex Collector c u rre n t. 100A Coltector-emitter v o lta g e . 600V • h FE

Mitsubishi transistor

Contextual Info: MITSUBISHI TRANSÌSTOR MODULES ! QM800HA-2HB ! HIGH POWER SWITCHING USE INSULATED TYPE ! QM800HA-2HB • lc Collector cu rre n t. 800A • V cex Collector-em itter • hFE DC current g am . 750 . v o lta g e 1000V

QM100DY-HBK

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM100DY-HBK HIGH POWER SWITCHING USE INSULATED TYPE QM100DY-HBK • Ic Collector cu rre n t. • V cex • hFE Collector-em itter v o lta g e . DC current g a in . 100A i 600V ! .750 j

DSP96000

Abstract: Motorola AR 164 wi 23 d5 motorola CROSS-REFERENCE
Contextual Info: MOTOROLA 1 2 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 00000000 00000200 00000010 00000000 00000010 00000008 ; ; ; ; ; ; reset start points data coef size cex,loc,cre,mu 132,42,0,21 DSP ASSEMBLER REFERENCE MANUAL $200 16 16 points/2 Figure D-1 Assembler Listing Format

2N8306

Abstract: BDY67 bux c 2N6250 BUX41 BUX43 esm 200 5039
Contextual Info: Power transistors N PN « Triple diffused » Fast switching Transistors de puissance N P N <r Triple diffusés » Commutation rapide Type Case Boîtier Ptot <W *V CEX v CEO V) 'c (A) h2 i E min max I (A) /'C ^case 2.5°C V C E sa t/ lC ( l B (V) / (A ) (A)

radiator 0,019

Abstract: 2n5578
Contextual Info: •■i ■1 Power Transistors Hometaxial-Base n-p-n Type Selection Charts cont’d hFE \ / a w~ (CMC1 CEO V CEX V VcE^^- V 'C E X -m A ' ‘c A V CE V Tem p.—°C 25 V CE V •c A 2N5578 FAMILY (n-p-n) High Current, High Power f y = 0.4 MHz min; P y = 300 W max

HD H101

Abstract: QM200HA-H QM600HA-24 QM600HA-2H QM300HA-2H equivalent QM300HA-H m7a1a QM600HD-M HA2C QM300HA-24
Contextual Info: 252 - - h ^N PN , 1 7-L .= i a c r vi v_ * VcBO V CEX SUS) A V EBO # = 9 V É I C TW-+Yr_. fV _ _ QM 20 O H A -H (V ) 600 600 QM 2 0 0 H A - 2H 1000 1000 QM 20 O H A -2 4 1200 1200 400 350 QM 20 O H C -M CV) (A ) 9 V I I /i 9 CTj B I f (A ) I FM fi ;i 1

RCA1E03

Abstract: RCA1A10 2N5415
Contextual Info: um wm m am Power Transistors High-Voltage n-p-n and p-n-p Type Selection Charts conf d V C E X (sus) V V V ^ g ls a t) —-V 'CEX-mA ‘c V CE Temp.—°C A A 25 •c •b V A A m V CEO*sus) 9 < o hFE 2N5240 FAMILY (n-p-n) Multiple Exitaxial (Cont'd) f j to 5MHz min; P j to 100 W max

28F008SA

Abstract: 28F016SA 28F320J5 28F640J5 DD28F032SA BSR4 equivalent 28F64
Contextual Info: E SEE NEW DESIGN RECOMMENDATIONS REFERENCE ONLY 32-MBIT FlashFile MEMORY DD28F032SA n n n n n n n User-Selectable 3.3 V or 5 V V CC n User-Configurable x8 or x16 Operation 70 ns Maximum Access Time 28.6 MB/sec Burst Write Transfer Rate 1 Million Typical Erase Cycles per Block

Contextual Info: in te l DD28F032SA 32-MBIT 2 MBIT X 16, 4 MBIT X 8 FlashFile MEMORY • User-Selectable 3.3V or SV Vcc ■ User-Configurable x8 or x16 Operation r ■ 70 ns Maximum Access Time ■ 28.6 MB/sec Burst Write Transfer Rate ■ Revolutionary Architecture - ' 00%Backwards-Compatible with

pm20cea060

Abstract: pm20ce pm20cea 20CEA 3 phase igbt INVERTER ac motor
Contextual Info: POiilEREX INC S IE D • 72=141,21 D 0 0 5 t .l l 02T ■ PRX P M 20C E A 060 ~ F -'S '7 -2 -ci Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 ln te lH lflO if^ ^ -2 M o d u le s Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14

Contextual Info: in te i SEE NEW DESIGN RECOMMENDATIONS REFERENCE ONLY 32-MBIT FlashFile MEMORY DD28F032SA • User-Selectable 3.3 V or 5 V Vcc ■ User-Configurable x8 or x16 Operation _ ^ ■ 70 ns Maximum Access Time ■ 28.6 MB/sec Burst Write Transfer Rate ■ Revolutionary Architecture

Contextual Info: in te l DD28F032SA 32-MBIT 2 MBIT X 16, 4 MBIT X 8 FlashFile MEMORY User-Selectable 3.3V or 5V V qc User-Configurable x8 or x16 Operation 70 ns Maximum Access Time 28.6 MB/sec Burst Write Transfer Rate 1 Million Typical Erase Cycles per Block 56-Lead, 1.2 x 14 x 20 mm Advanced

PM20CHA060

Abstract: 2 anode igbt inverter circuit diagram 3 phase inverters circuit diagram igbt 3 phase inverters circuit diagram igbt PM20CHA060 BP107 T-57-aa PM20CHA06
Contextual Info: P OIilEREX ¿ ^ I k J M INC E V S IE T> m 72 i4 b 2 1 DDDSb5f l ObO * P R X P M 20C H A 060 lE A -7= 5 7 - 2 5 Powerex, inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 ln t G llim O C P '^ - 3 M 0 d u l 0 S Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 j ^ re e p ^ a s e

CY62143BVLL-70BAI

Contextual Info: 47V CY62143BV MoBL PRELIMINARY 256K x 16 Static RAM Features • Low voltage range: — CY62143BV: 2.7V–3.6V • Ultra-low active, standby power • Automatic power-down when deselected • TTL Compatible inputs and outputs • CMOS for optimum speed/power

SS1117

Abstract: ssi 117 SSI 501
Contextual Info: sliwnáusknis INNOVATORS IN /INTEGRATION SSI 540 Series Read Data Processor Preliminary Data Sheet GENERAL DESCRIPTION of a differential line-driver output. The SSI 540-4 has the same features as the SSI 540-3 but also deletes the head select buffers. The SSI 540-4 Is available in a 22-Pin dip.

MX29LA641DHXCI-90G

Abstract: A0-A21 Q0-Q15 SA10 SA11 SA12 MX29LA641DHxci pm128
Contextual Info: MX29LA641D H/L 64M-BIT [4M x 16/8M x 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES GENERAL FEATURES • 8M Bytes/4M Words switchable • 128 Equal Sectors with 64K Bytes 32K words each - Any combination of sectors can be erased with erase suspend/resume function

292146

Abstract: 28F008SA 28F016XS intel DOC
Contextual Info: E n n n n n 28F016XS 16-MBIT 1 MBIT x 16, 2 MBIT x 8 SYNCHRONOUS FLASH MEMORY Effective Zero Wait-State Performance up to 33 MHz  Synchronous Pipelined Reads SmartVoltage Technology  User-Selectable 3.3V or 5V V CC  User-Selectable 5V or 12V V PP

32P540

Abstract: 32P5402 32R117 153j capacitor 32P540-CH
Contextual Info: SSI 32P540-Series Read Data Processor June, 1989 DESCRIPTION FEATURES The SSI 32P540 is a bipolar integrated circuit that provides all data processing necessary for detection and qualification of MFM read signals from rigid media. ST506 compatible Interfacing Is provided for write data

MX29LA641D

Abstract: mx29LA641 64M-BIT 8M x 8 4M x 16 SINGLE VOLTAGE A0-A21 Q0-Q15 SA10 SA11 SA12 PM1289 29LA641D
Contextual Info: MX29LA641D H/L 64M-BIT [4M x 16/8M x 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES GENERAL FEATURES • 8M Bytes/4M Words switchable • 128 Equal Sectors with 64K Bytes 32K words each - Any combination of sectors can be erased with erase suspend/resume function

29LA321DH

Abstract: MX29LA321D MX29LA321DHXCI-70G Q0-Q15 SA10 SA11 SA12 SA13 A20-A15
Contextual Info: MX29LA321D H/L MX29LA321D H/L DATASHEET P/N:PM1340 REV. 1.2, MAR. 01, 2010 1 MX29LA321D H/L Contents FEATURES. 5