PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING A
Abstract: BUX53
Contextual Info: Power transistors • NPN « Epitaxial Planar » Am plifier and switching NP N « Planar E p itaxte » A m p lific a tio n e t co m m u ta tio n Type Case Boitier *tot W * V CEx 'c VCEO (V) (A) h21E m in max 'c (A) VCEsat / ' C (V) / (A /l('AB) fT (MHz)
|
OCR Scan
|
tpu76pnp triple diffused type high voltage switching abux53 |
PDF
|
2N2243
Abstract: H21E 2N3439 pnp case to-39
Contextual Info: CB 7 (CB 6) S ilicon N P N transistors, general purpose T g m b -2 5 T ra n s is to rs N P N s ilic iu m , usage g én é ra ! v CEO (V) Case h 2 iE fT (MHz} *s (ns) •c v CEsat (V) <mA) max 60 150 1,5 150/15 40 61 120 150 1,5 150/15 50 61 20 60 150 5 150/15
|
OCR Scan
|
2n2243h21e2n3439pnp case to-39 |
PDF
|
BC 641
Abstract: bc 207 npn BC190 bu 1011 ET 3005 h21e BU 208 BC140 BC190B bc107
Contextual Info: Silicon N PN transistors, general purpose continued Tam b = 25 <>C Transistors N P N silicium, usage général (suite) <5 v CEO Case ^tot (mW) (V) h2 lE VcER* h2 lE * VCE X ° min >C v CEsat (V) max ImA} ft (ns) (MHz) 'off* max max l C/lB (mA> min TSi 76
|
OCR Scan
|
bc 641bc 207 npnbc190bu 1011+5et 3005h21e bu 208bc140bc190bbc107
|
PDF
|
BU 647
Abstract: 182T2 185t2 BU143 181T2 BUY69 ESM 182 BU 109 BU104
Contextual Info: CB 19 Power transistors N PN <: Triple diffused » Fast switching Transistors de puissance N P N <r Triple diffusés » Commutation rapide Ptnt *V C E X 'c B o itie r <W| V C EO (V) <A) h21E min max t '<A) ° VCE (V) CO < Case O < Type Tcasc 25 °C max *T
|
OCR Scan
|
tpu76bu 647182t2185t2+6bu143181t2buy69esm 182bu 109bu104
|
PDF
|
LS 2822
Abstract: IC 2816 2N2818 2N1209
Contextual Info: {CB 69 CB 70) Power transistors N PN k Triple Diffused » Military applications Transistors de puissance N P N « Triple diffusés » Applications militaires Type Case Boîtier Ptot (Wl * VCEX VCEO (V) *C (A) h21E ° min max l ' (A) ^ ca se^ S C v C Esat/IC M b
|
OCR Scan
|
tpu76ls 2822ic 28162n2818+12n1209
|
PDF
|