CED 03 Search Results

Contextual Info: 2 TH I S DRAW ING IS U NP UBL I S HE D. C O P Y R I G H T 20 R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S CORPORATION. ALL RIGHTS 20 LOC 2.5 TYP ROW A ] CED— ROW B [ ^ - j3 ROW C £|gp ROW D rgp 3 CED - -E gp—] CED LIXLL l^ tJ ^

Contextual Info: 24 23 22 21 20 19 17 18 o o 15 16 CED 4X 2 . 9 M CED 4X 2 . 5 5 ŒHJ +0.6 -0 .1 5 14 13 12 11 10 8 7 SYMBOL D E F I N I T I O N A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL DOES NOT REQUIRE INSPECTION, IT MAY BE CONTROLLED ON AN IN D IV ID U A L COMPONENT DRAWING.

IC 7400

Abstract: 7400 IC SLB 0587 7400 sda5273 B352-B6155-X-X-7400 siemens datenbuch IC Datenbuch B152-H7004 sae800
Contextual Info: Hinweise für Ihre LiteraturBestellung How to order Literature Folgende Hinweise gelten nur für Bestel­ lungen innerhalb Deutschlands. The following only applies to orders pla­ ced in Germany. Richten Sie bitte Ihre Bestellung an Send your order to Siemens AG

Contextual Info: SSP3N90A A d van ced Power MOSFET FEATURES B V qss - • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. @ VDS = 900V

TCA 785

Abstract: 7400 lm 7400 tca 785 application siemens hall application notes
Contextual Info: Hinweise für Ihre LiteraturBestellung How to order Literature Folgende Hinweise gelten nur für Bestel­ lungen innerhalb Deutschlands. The following only applies to orders pla­ ced in Germany. Richten Sie bitte Ihre Bestellung an Send your order to Siemens AG

7400

Contextual Info: Hinweise für Ihre LiteraturBestellung How to order Literature Folgende Hinweise gelten nur für Bestel­ lungen innerhalb Deutschlands. The following only applies to orders pla­ ced in Germany. Richten Sie bitte Ihre Bestellung an Send your order to Siemens AG

IC 7400

Abstract: lm 7400 digital ic 7400 siemens V20 MANUAL 7400 for 7400 ic B143-H6824-G1-X-7600 B192-H6721 B191-H6709 B191-H6766
Contextual Info: Hinweise für Ihre LiteraturBestellung How to order Literature Folgende Hinweise gelten nur für Bestel­ lungen innerhalb Deutschlands. The following only applies to orders pla­ ced in Germany. Richten Sie bitte Ihre Bestellung an Send your order to Siemens AG

SSF7N80A

Contextual Info: SSF7N80A A d van ced Power MOSFET FEATURES BVdss - 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 pA Max. @ VDS = 800V

A19100-L531-F303-1

Abstract: sae800 IC 7400 7400 halbleiter schaltungen 7400 IC B191-H6777-X-X-7600 ic number code book FREE ON Semiconductor PRICE BOOK
Contextual Info: Hinweise für Ihre LiteraturBestellung How to order Literature Folgende Hinweise gelten nur für Bestel­ lungen innerhalb Deutschlands. The following only applies to orders pla­ ced in Germany. Richten Sie bitte Ihre Bestellung an Send your order to Siemens AG

voltage regulator 9V to 3,3V

Abstract: 9V to 3,3V regulator
Contextual Info: y UCC3831 UNITRODE A D V AN CED INFORM ATION Universal Serial Bus Power Controller • Support Four 5V Peripherals and One USB 3.3V Controller • Separate Power Enables • 500mA Current Limiting per Channel • Separate Open Drain Fault Indicator for Each Channel

Contextual Info: , CDP68HC05P4B CDP68HCL05P4B, CDP68HSC05P4B ADVANCE INFORMATION August 1997 8-Bit En han ced Microcontroller S e rie s Features Description HARDWARE The CDP68HC05P4B HCMOS Microcomputer is a member of the CDP68HC05 family of single chip microcomputers. This 8-bit microcomputer unit MCU contains a CPU, 176

Contextual Info: A d va n ced po w er Te c h n o lo g y * 1 - Cathode 2 -Anode Back of Case - Cathode APT15D40K 400V 15A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES Anti-Parallel Diode -Switchmode Power Supply -Inverters Free Wheeling Diode

03FE99

Abstract: 12146367
Contextual Info: 16 15 14 13 12 11 a 10 SYMBOL DEFINITION A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL DOES NOT REQUIRE INSPECTION. IT MAY BE CONTROLLED ON AN INDIVIDUAL COMPONENT DRAWING. O M CED 2.X 15.6 MISSING NUMBERS TOTAL NO OF SYMBOLS ON DRAWING 18 LAST NO. USED

SSF9N90A

Contextual Info: SSF9N90A A d van ced Power MOSFET FEATURES B ^D S S Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 }iA Max. ■ Low RDS(0N) : 0.938 Q (Typ.) “ ^ D S (o n ) “

1SV80

Abstract: APT45GF60BN Thyristor BT 102 A 03e 000D t71 thyristor
Contextual Info: ADVANCED POI dER TECHNOLOGY b lE 025710^ 0000070 032 « A V P D A d van ced PO W ER Te c h n o l o g y " APT45GF60BN 600V 45 A POWER MOS IV 1GBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: International 1 ]Rectifier PD — IR L13303 p re lim in a ry HEXFET® Power MOSFET • • • • • • Logic-Level Gate Drive Ad van ced P rocessTechnology Isolated Package High Voltage Isolation = 2.5 K V R M S Sink to Lead Creepage Dist. = 4.8mm

5040BNF

Abstract: APT5040BNF 5040bn 040Ohms APT5050BNF 3040-1-D 500V14A
Contextual Info: A d va n ced P o w er Te c h n o lo g y * APT5040BNF 500V 16A 0.400 APT5050BNF 500V 14A 0.500 POWER MOS IV FAST RECOVERY MOSFET FAMILY N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.

nissan

Abstract: CED 19 m3640027 P1519027
Contextual Info: 24 23 22 20 21 19 IB 17 16 15 14 13 11 12 8 10 SYMBOL DEFINITION A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL CD DOES NOT REQUIRE INSPECTION. IT MAY BE CONTROLLED ON AN INDIVIDUAL COMPONENT DRAWING. M - CED 2X 20.7 MISSING NUMBERS TOTAL NO. OF SYMBOLS ON

Contextual Info: CPS-1848-CED: Features • RapidIO ports • 48 bidirectional SRIO lanes • Port widths of 1x, 2x, and 4x allow up to 20 Gbps per port • Port speeds selectable: 6.25, 5, 3.125, 2.5, or 1.25 Gaubd • Support Level I defined short or long haul reach, and Level

Contextual Info: ADVANCED POWER TECHNOLOGY b3E D • D2S7TDT 0001152 347 «AVP A d van ced P o w er Te c h n o l o g y APT2X61D100J APT2X61D90J APT2X61D80J 1000V 900V 800V 60A 60A 60A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS

5025bn

Abstract: APT5025BN apt4525bn apt4530bn 4525BN apt5025 025Q
Contextual Info: A d van ced P o w er Te c h n o l o g y O D APT5025BN APT4525BN APT5030BN APT4530BN Ô S H? WER MOS IV'03 500V 450V 500V 450V 23.0A 23.0A 21.0A 21.0A 0.25Q 0.25Í2 0.30Q 0.30Q N -C H A N N EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIM UM RATINGS

Contextual Info: VZA WHITE M ICRO ELECTRO N ICS 256Kx16 M O N O LITHIC SRA M WMS256K16-XDLX A D VA N CED * FEATURES • Access Times 20. 25. 35nS ■ 2V Minimum Data Retention devices available ■ 44 pin Ceramic SOJ Package 102 ■ Commercial, Industrial and M ilita ry Temperature Range

Contextual Info: C3 WMDE4M4-XXX M/HITE /MICROELECTRONICS 4Mx4 CMOS EDO Dynamic RAM advan ced* FEATURES • Fast Access Tim e îr a c : 70, 8 0 ,1 00ns ■ TTL-Compatible Inputs and Outputs ■ Pow er Supply: 5 V ± 0 .5 V ■ RAS-Only Refresh Packaging: ■ CAS Before RAS Refresh

QFN3x3-16L

Contextual Info: Advanc A ced Pow wer E Electron nics Co orp. AP PE1536 2M MHz, 6A Synchrronous Step Do own Converterr FEATUR RES DES SCRIPTIO ON Two 30m mΩ typical MOSFETs M forr High The APE1536 A is a synchronou us step down n converter Efficiencyy at 6A Load ds designed with in