SILICON360 Search Results
SILICON360 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: SILICON360 S51232FVRH: 512K x 32 Bit Radiation Tolerant Static RAM Product Feature Sheet Features • Fabricated in 90 nm process technology using custom EPI wafers • Total Dose: 300K rads Si • Prompt Dose: No burn out and latchup; Dose rate ranging from 1.0E9 to |
Original |
silicon360s51232fvrh8e11rad/secondio0-io31 | |
|
Contextual Info: Silicon360 S512 Series SRAMs 512Kx16,x32,x40-bit Radiation Tolerant Static RAM Features: • Fabricated in 90 nm process technology using custom EPI wafers • Total Dose: 300K rads Si • Prompt Dose: No burn out and latch-up; Dose rate ranging from 1.0E9 to |
Original |
silicon360512kx16x40-bit8e11rad/second+2 | |
|
Contextual Info: SILICON360 S51240FVRH: 512K x 40 Bit Radiation Tolerant Static RAM Product Feature Sheet Features • Fabricated in 90 nm process technology using custom EPI wafers • Total Dose: 300 K rads Si • Prompt Dose: No burn out and latchup; Dose rate ranging from 1.0E9 to |
Original |
silicon360s51240fvrh8e11rad/second106mev-cm2+1 | |
|
Contextual Info: SCV64 User Manual http://www.silicon360.com The information in this document is subject to change without notice and should not be construed as a commitment by Silicon360. While reasonable precautions have been taken, Silicon360 assumes no responsibility for any errors that may appear in this document. |
Original |
scv64silicon360 | |
|
Contextual Info: TitlePage - 80C1000_MA002_02 Tsi106 PowerPC Host Bridge Hardware Specifications Manual Document Number: 80C1000_MA002_02 Document Status: Formal Release Date: October 2006 Silicon 360™ Trademarks Silicon360 is a registered trademark of Silicon Turnkey Solutions. Silicon360, the Silicon360 logo, Tsi106, and |
Original |
80c1000tsi106silicon360 | |
|
Contextual Info: SILICON360 S51216FVRH: 512K x 16-Bit Radiation Tolerant Static RAM Product Feature Sheet Features • Fabricated in 90 nm process technology using custom EPI wafers • Total Dose: 300 K rads Si • Prompt Dose: No burn out and latchup; Dose rate ranging from 1.0E9 to |
Original |
silicon360s51216fvrh16-bit8e11rad/second+2 | |
|
Contextual Info: Tsi205-CED: Primary Side Monitor Features • Input voltage measurement 24 or 48 V • 10-bit analog-to-digital converter (ADC) • Input voltage measurement accuracy 0.5% • Fuse status monitoring, high and low side • Primary current sensing and measurement |
Original |
tsi205-ced10-bitsilicon360 | |
|
Contextual Info: Tsi257-CED: Power Subsystem Controller with Fault Log Features • Fully interlocked management of six power supplies • Programmable sequencing for startup, shutdown, and fault conditions • Programmable output OV and UV warning and fault thresholds • Multiple sequencing topologies |
Original |
tsi257-ced10-bittsi20xtsi257+1 | |
|
Contextual Info: ADC0804S030/040/050: Single 8 bits ADC, up to 30 MHz, 40 MHz or 50 MHz Features • • • • • • • • • • • • • • 8-bit resolution Sampling rate up to 50 MHz DC sampling allowed One clock cycle conversion only High signal-to-noise ratio over a large |
Original |
adc0804s030/040/050adc0804s030tsadc0804s040tsadc0804s050ts | |
|
Contextual Info: TSP776xx: Features • Controlled baseline • One assembly/test site, one fabrication site • Extended temperature performance of −40 °C to 125 °C • Enhanced diminishing manufacturing sources DMS support • Enhanced product change notification • Qualification pedigree† |
Original |
tsp776xx500-matps7763320-pin+2 | |
|
Contextual Info: TDA8768AH/4/5/7/8: Single 12 bits ADC, up to 40 MHz, 55 MHz or 70 MHz Features • • • • • • • • • • • • • • • • 12-bit resolution Sampling rate up to 70 MHz -3 dB bandwidth of 245 MHz 5 V power supplies and 3.3 V output power supply |
Original |
tda8768ah/4/5/7/812-bitadc1206s040hadc1206s055h+6 | |
|
Contextual Info: ADC1207S080: Single 12 Bits ADC, Up to 80 MHz with Direct/Ultra High IF Sampling Features • 12-bit resolution • Differential input with 375 MHz bandwidth • 90 dB SFDR; 71 dB S/N fi = 225 MHz; fclk = 80 MHz; B = 5 MHz • 74 dB SFDR; 66.5 dB S/N (fi = 175 MHz; |
Original |
adc1207s08012-bitsilicon360 | |
|
Contextual Info: Si2000: Complete 4-Channel Motion Control System Product Feature Sheet Features • 4 Bi-directional PWM motor control channels • 4 Kelvin motor current sense pairs • 10 multi-purpose sensor inputs • Internal 10-bit ADC • Integrated 8051 micro controller |
Original |
si200010-bit68-leadsilicon360 | |
|
Contextual Info: Si3000: 40 V Output Hi-Current H-Bridge Motor Driver Product Feature Sheet Features • Low input voltage range: 3 to 5 V • Wide output voltage range: 5 to 40 V • Bi-directional output drive current: 10 A maximum • PWM ouput driven with 5 V input for |
Original |
si3000silicon360si200068-lead | |
|
|
|||
|
Contextual Info: TDA9910HW/8: Single 12 Bits ADC, Up to 80 MHz with Direct/Ultra High IF Sampling Features • 12-bit resolution • Differential input with 375 MHz bandwidth • 90 dB SFDR; 71 dB S/N fi = 225 MHz; fclk = 80 MHz; B = 5 MHz • 74 dB SFDR; 66.5 dB S/N (fi = 175 MHz; |
Original |
tda9910hw/812-bitsilicon360 | |
|
Contextual Info: S51216FVRH: 512K x 16-Bit Radiation-Tolerant Static RAM Product Feature Sheet Features • Fabricated in 90 nm process technology using custom EPI wafers • Total Dose: 300 krads Si • Prompt Dose: No burn out and latchup; Dose rate ranging from 1.0 E9 to 1.8 |
Original |
s51216fvrh16-bite11rad/secondio0-io31+1 | |
|
Contextual Info: Tsi578-CED: Serial RapidIO Switch Features • 80 Gbps aggregate bandwidth • Low latency with cut-through capability • Enhanced SerDes for low power solution • RapidIO Interconnect Specification Revision 1.3 compliant • High performance hardware multicast |
Original |
tsi578-ced8b/10btsi568asilicon360 | |
|
Contextual Info: ADC1206S040/055/070: Single 12 bits ADC, up to 40 MHz, 55 MHz or 70 MHz Features • • • • • • • • • • • • • • • • 12-bit resolution Sampling rate up to 70 MHz -3 dB bandwidth of 245 MHz 5 V power supplies and 3.3 V output power supply |
Original |
adc1206s040/055/07012-bitco206s040hadc1206s055h+4 | |
|
Contextual Info: ADC1004S030/040/050: Single 10 Bits ADC, Up to 30, 40, or 50 MHz Features • • • • • • • • • • • • • • 10-bit resolution Sampling rate up to 50 MHz DC sampling allowed One clock cycle conversion only High signal-to-noise ratio over a large |
Original |
adc1004s030/040/05010-bitadc1004s030tsadc1004s040ts+4 | |
ARM11 processor block diagram
Abstract: ARM11 processor NFP-3240
|
Original |
sinfp-32xxixp28xxmpps/2070-million+9 | |
|
Contextual Info: ADC0804S030/040/050: Single 8 bits ADC, up to 30 MHz, 40 MHz or 50 MHz Features • • • • • • • • • • • • • • 8-bit resolution Sampling rate up to 50 MHz DC sampling allowed One clock cycle conversion only High signal-to-noise ratio over a large |
Original |
adc0804s030/040/050adc0804s030tsadc0804s040tsadc0804s050ts+3 | |
|
Contextual Info: Preliminary‡ 2Gb: x4, x8, x16 DDR3L SDRAM Addendum Description 1.35V DDR3L SDRAM Addendum MT41K512M4 – 64 Meg x 4 x 8 banks MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks • TC of 0°C to 95°C – 64ms, 8192-cycle refresh at 0°C to 85°C |
Original |
mt41k512m4mt41k256m8mt41k128m168192-cycle+4 | |
|
Contextual Info: Universe II : Features • Industry-proven, high-performance 64bit VMEbus interconnect • Fully compliant, 32-bit or 64-bit, 33MHz PCI bus interconnect • Integral FIFOs for write posting to maximize bandwidth utilization • Programmable DMA controller with |
Original |
64bit32-bit64-bit33mhz+4 | |
|
Contextual Info: ADC1004S030/040/050: Single 10 Bits ADC, Up to 30, 40, or 50 MHz Features • • • • • • • • • • • • • • 10-bit resolution Sampling rate up to 50 MHz DC sampling allowed One clock cycle conversion only High signal-to-noise ratio over a large |
Original |
adc1004s030/040/05010-bitadc1004s030tsadc1004s040ts+5 | |