SSF9N90A Search Results
SSF9N90A Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SSF9N90A | Fairchild Semiconductor | N-CHANNEL POWER MOSFET | Original | 263.69KB | 7 | ||
| SSF9N90A | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
| SSF9N90A | Fairchild Semiconductor | Advanced Power MOSFET | Scan | 170.9KB | 6 |
SSF9N90A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
SSF9N90AContextual Info: Advanced SSF9N90A P o w e r MOSFET FEATURES BV D S S — • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ^D S o n = ■ Lo w e r Input C a pa citance lD = 6 A ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea |
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ssf9n90a | |
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Contextual Info: SSF9N90A Advanced Power MOSFET FEATURES BV0ss ~ 900 V ^DS on = 1 .4 Q lD = 6 A • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ ■ Extended Safe Operating Area Lower Leakage Current : 25 p A (M a x ) @ VDS = 900V |
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ssf9n90a | |
SSF9N90AContextual Info: SSF9N90A Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS on = 1.4 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 6 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current : 25 µA (Max.) @ VDS = 900V |
Original |
ssf9n90a | |
SSF9N90AContextual Info: SSF9N90A A d van ced Power MOSFET FEATURES B ^D S S Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 }iA Max. ■ Low RDS(0N) : 0.938 Q (Typ.) “ ^ D S (o n ) “ |
OCR Scan |
ssf9n90a100dc003b333003b33m+1 | |
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Contextual Info: Advanced SSF9N90A Power MOSFET FEATURES BVDSS • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ VDS = 900V B Low Rds(0n) ■ 0.938 £1 (Typ.) CD Rugged Gate Oxide Technology |
OCR Scan |
ssf9n90a | |
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Contextual Info: SSF9N90A Advanced Power MOSFET FEATURES • Lower Input Capacitance ■ ■ ■ Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25|aA Max. @ VDS = 900V ■ Low R0S(on) •' 0.938 Q (Typ.) - 900 V ^DS(on) = 1.4 n II Avalanche Rugged Technology |
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ssf9n90a | |
irf1740
Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
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ssr3055airfr014airfr024airfr034a+16 | |
SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
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Original |
5ke100a5ke100ca5ke10a5ke10ca+16 | |
YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
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Original |
2n70002n70022sj3772sj378+16 | |
ss8050 d 331
Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
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Original |
f-91742ss8050 d 331tip122 tip127 mosfet audio ampksd180+7 | |
SSH6N80
Abstract: ptc6063 equivalent MTW15N25E SPA08N80C3 NTE2393 NTE99 SE7055 MTP4N90 SK3024 se5020
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Original |
mtm8n55o-204aa/to-3mtm8n60mtm8n40+13 | |
SSD2104
Abstract: irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A
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OCR Scan |
ssr3055airfr014airfr024airfr034a+16 |