CCB TRANSISTOR Search Results

LC7574F

Abstract: lc7502x EN3742A vfd display driver ccb format sanyo ccb LC75700 sanyo ccb chip sanyo ccb specification LC7502
Contextual Info: Ordering number : EN*3742A CCB Computer Control Bus IC I/F Serial Bus Format Overview This Computer Control Bus (CCB) is a bus format that is designed to ensure that communication in a system configured with a multiple number of ICs is achieved reliably and economically. It is designed for communication between ICs in

128-B

Abstract: SOT128B bfq162
Contextual Info: 58 RF/Microwave Devices Video Transistors Characteristics Ratings Typo No. Pkg. •Vcbo max V ■VCEO max (V) max (mA) hFB min T, CCB max (pF> (°C) fr min (MHz) NPN BFQ161 BFQ162 BFQ163 BFQ166 BFQ231 BFQ231A BFQ232 BFQ232A BFQ233 BFQ233A BFQ234 BFQ235 BFQ235A

transistor A 564

Abstract: transistor am s20 T06 transistor transistor t06 19 transistor t06
Contextual Info: Transistor Arrays gtECTRICAL CHARACTERISTICS <7> * 2SX! • fr Mm SLt * ; UPA101G1 UPA1Q2G2 UPA103G3 hFE Ces CCS: mA) CcB tpF) (pF) (pF) MAX MAX TYP TYP TYP TYP 1.0 1.0 1.0 1.0 100 - 1.0 1.0 100 100 0.9 1.4 1.4 1.4 •:1.4 iCBO (GHz) TYP MAX 9 40 40 40

AVALANCHE TRANSISTOR

Abstract: FMMT413 SOT23 NPN LED driver 110V laser led DSA003671 avalanche mode transistor
Contextual Info: FMMT413 ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL Emitter Inductance Le Transition Frequency Collector-Base Capacitance MIN. TYP. MAX. UNIT CONDITIONS. 2.5 nH Standard SOT23 leads fT 150 MHz IC=10mA, VCE=5V f=20MHz Ccb 2 pF VCB=10V, IE=0 f=1MHz . SOT23 NPN SILICON PLANAR

CEN741

Abstract: CEN832 low noise transistors vhf 2n998 OSC20 BFY90
Contextual Info: Small signal Transistors npn TO-72 Case TYPE NO. DESCRIPTION hFE v CBO VCEQ v EBO ICBO @ v CBO ftiA V) (V) (V) (V) @ ic @ vCE (mA) (V) VCE(SAT] @ lc Cob fT (mA) (MHZ) *Ccb (V) (PF) 2N917 2N917A RF/IF OSCILLATOR RF/IF OSCILLATOR MIN MIN MIN MAX 30 15 3.0

D39C4

Abstract: GES6220 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BV C e o @ 10mA V hF E fT V CE(SAT) Min.-Max. @ IC,V C E (V> (V) Max. l c . *B Typical (MHz) Ccb@10V 1 MHz Typical (Pf) PT @ 25° C (mW) 2N4256 2N4424 2N4425 NPN NPN NPN 40

D29E9...10

Abstract: 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVC eo @ 10mA V h FE fT V C E (S A T ) Min.-Max. @ IC,V C E (V> (V) Max. l c . *B PT Typical (MHz) Ccb@10V 1 MHz Typical (Pf) @ 25° C (mW) 2N4256 2N4424 2N4425 NPN NPN NPN

80058

Abstract: VRRM VRSM VBR Optocoupler with thyristor IC specification terminology OPTOCOUPLER thyristor Optocoupler with triac optocoupler 961 LINEAR OPTOCOUPLER M/vishay opto detector
Contextual Info: Symbols and Terminology - Alphabetically Vishay Semiconductors Symbols and Terminology - Alphabetically A A A a AOQ B bit/s C C C C °C CCE CEB CCB CCEO CD CI, CIN CIO Cio |CMH| |CML| CO Cj Ck CMTI CMR CTI CTR CTR a.c. CTR (d.c.) d dV/dtcr Anode, anode terminal

HP4279A

Abstract: Bipolar Junction Transistor AN023 AN024 ccb transistor
Contextual Info: A pp li c at i on N ot e , R ev . 2. 0 , N ov . 2 00 6 A p p li c a t i o n N o t e N o . 0 2 4 P a r a s i t i c C a pa c i t a n c e in B i po l a r J un c t i o n Transistors R F & P r o t e c ti o n D e v i c e s Edition 2006-11-14 Published by Infineon Technologies AG

TO226AA

Abstract: 226AA msc2295 P2N2222A MPS3904
Contextual Info: Bipolar Transistors RF Transistors NPN PNP V BR CEO IC mA Max Min hFE Max fT MHz Min Cap pF Max CRB = 0.65 CRE = 0.65 MPSH10 − 25 − 60 − 650 BF959 − 20 100 40 − 600 MPSH17 MPS918 MPS5179 MPS3563 MMBTH10LT1 − − − − 15 15 12 12 − 50 50 50

2907 TRANSISTOR PNP

Abstract: marking eh sot23 of ic 2907 2907 2907 TRANSISTOR MMBT2222A SMBT2222A
Contextual Info: SMBT2907A/MMBT2907A PNP Silicon Switching Transistor • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBT2222A / MMBT2222A NPN Type Marking SMBT2907A/MMBT2907A s2F Pin Configuration 1=B

857T

Abstract: BC857AT BC857BT SC-75
Contextual Info: BC 857T PNP Silicon AF Transistor 3
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BC 847 .T 2 1 Type Marking Pin Configuration BC 857AT 3Es 1=B 2=E 3=C SC-75 BC 857BT 3Fs

Transistor K 799

Abstract: transistor BF 450
Contextual Info: BF 799 NPN Silicon RF Transistor 3
For linear broadband amplifier application up to 500 MHz
SAW filter driver in TV tuners 2 1 Type Marking BF 799 LKs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings Parameter Symbol Collector-emitter voltage

BCP49

Abstract: BCP52-16 FT1513
Contextual Info: BCP49 PNP Silicon Darlington Transistor • For general AF applications • High collector current 4 3 2 • High current gain 1 C 2,4 B(1) E(3) EHA00009 Type BCP49 Marking BCP49 1=B Pin Configuration 2=C 3=E 4=C - Package - SOT223 Maximum Ratings Parameter

BCR108W

Abstract: BFS17W 1511V
Contextual Info: BFS17W NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 3 2 1 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFS17W Marking MCs Pin Configuration 1=B 2=E 3=C Package

Contextual Info: BFN38 NPN Silicon High-Voltage Transistors • Suitable for video output stages TV sets and switching power supplies 4 3 2 • High breakdown voltage 1 • Low collector-emitter saturation voltage • Complementary type: BFN39 PNP Type BFN38 Marking BFN38 1=B

sot-23 rks

Abstract: marking code RKS transistors transistor bf 194 NF 841 pcb antenna 1356 Q62702-F1346 bf 194 pin configuration
Contextual Info: BFR 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA • Complementary type: BFR 106 NPN ESD: Electrostatic discharge sensitive device, observe handling precaution!

BCP52-16

Abstract: BDP953 BDP954
Contextual Info: BDP953 NPN Silicon AF Power Transistor • For AF driver and output stages • High collector current 4 3 2 • High current gain 1 • Low collector-emitter saturation voltage • Complementary type: BDP954 PNP Type BDP953 Marking BDP953 1=B Pin Configuration

BFS17P

Abstract: BCW66
Contextual Info: BFS17P NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 3 • Pb-free RoHS compliant package 1) 1 • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!

BAW78D

Abstract: BFN18 BFN19 MARKING DE
Contextual Info: BFN18 NPN Silicon High-Voltage Transistors • Suitable for video output stages TV sets 1 2 and switching power supplies 3 2 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BFN19 PNP • Pb-free (RoHS compliant) package 1)

BCP52-16

Abstract: PZTA14
Contextual Info: PZTA14 NPN Silicon Darlington Transistor • For general AF applications 4 • High collector current 3 2 • High current gain 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 Type PZTA14 Marking PZTA14 1=B Pin Configuration 2=C

BCP52-16

Abstract: BFN38 BFN39
Contextual Info: BFN38 NPN Silicon High-Voltage Transistors • Suitable for video output stages TV sets 4 and switching power supplies 3 2 • High breakdown voltage 1 • Low collector-emitter saturation voltage • Complementary type: BFN39 PNP • Pb-free (RoHS compliant) package 1)

Contextual Info: PZTA14 NPN Silicon Darlington Transistor • For general AF applications 4 • High collector current 3 2 • High current gain 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 Type PZTA14 Marking PZTA14 1=B Pin Configuration 2=C

Q62702-F1377

Contextual Info: BFP 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA fT = 7GHz • F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type