CASON Search Results

CS42L50K

Abstract: AES17-1991 CDB42L50 CS42L50 CS42L50-KN
Contextual Info: CS42L50 Low Voltage, Stereo CODEC with Headphone Amp Features Description l 28-Pin CASON package l 1.8 to 3.3 Volt supply l 24-Bit conversion / 96 kHz sample rate l 96 dB ADC/DAC dynamic range at 3 V supply l -88/-85 dB ADC/DAC THD+N l 19 mW playback power consumption @ 1.8 V

cason

Abstract: i1005
Contextual Info: -► [Ä I- B [— 0 .7 ± 0 .0 5 FREESCALE SEMICONDUCTOR, INC. ALL RIGHTS RESERVED. TITLE: CASON 14, 7 X 7 X 1.01 MECHANICAL OUTLINE PRINT VERSION NOT TO SCALE DOCUMENT NO: 98ASA99348D REV: C CASE NUMBER: 1 3 8 3 -0 2 20 MAY 2005 STANDARD: NON-JEDEC BOTTOM VIEW

ATMEL reflow temp

Abstract: cason ATMEL JEDEC-STD-020 cason 8 pcb pattern SOIC-8s2 8S2 8-lead SOIC 8 pcb pattern IPC-SM-782 DVD laser pickup assembly 8s2 pcb
Contextual Info: CASON Package Pad Landing Recommendations DataFlash Introduction This application note provides PCB designers with a set of guidelines for successful board mounting of Atmel’s DataFlash® memories housed in the Chip Array Small Outline No Lead CASON package. The 8-contact CASON package fits the same PCB

Contextual Info: M O SEL V IT E L IC V53C8258L UL TRA-HIGH SPEED, 3.3 VOLT256K X 8 BIT EDO PAGE MODE CMOS DYNAMIC RAM PR&BMBBOtt HIGH PERFORMANCE 60 Max. RAS Access Time, tRAC 60 ns Max. Column Address Access Time, (t^M ) 30 ns Min. Extended Data Out Page Mode Cycle Time, (tPC)

Contextual Info: in te i’ 51C256L LOW POWER 256K X 1 CHMOS DYNAMIC RAM 51C256L-15 51C256L-20 Maximum Access Time ns 150 200 Maximum CHMOS Standby Current (mA) 0.1 0.1 • Low Power Data Retention ■ TTL and HCT Compatible — Standby current, CHMOS — 100 ¡¡A (max.)

Contextual Info: in te i’ 51C256HL HIGH PERFORMANCE LOW POWER RIPPLEMODE 256K X 1 CHMOS DYNAMIC RAM 51C256HL-15 51C256HL-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 Maximum CHtyOS Standby Current (mA) 0.1 0.1 Ripplemode Operation

Contextual Info: irrte1* M51C256H HIGH PERFORMANCE RIPPLEMODETm 256K x 1 CHMOS DYNAMIC RAM M ilita ry M51C256H-15 M51C256H-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 High Reliability Ceramic— 16 Pin DIP Ripplem ode Operation — Continuous Data Rate over 12 MHz

Contextual Info: in te T 51C256HL HIGH PERFORMANCE LOW POWER RIPPLEMODE 256K X 1 CHMOS DYNAMIC RAM 51C256HL-15 51C256HL-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 Maximum CHMOS Standby Current (mA) 0.1 0.1 Ripplemode Operation Low Power Data Retention

km416c1200j

Abstract: km416c1200 MAS 10 RCD 71FC
Contextual Info: SAMSUNG ELECTRONICS INC b?E ]> • 7Tmi4E D01b3ña 731 SMGK CMOS DRAM KM416C1200 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The S am sung KM416C1200 is a CMOS high speed 1,048,576 bit x 16 Dynam ic Random A ccess Memory. Its

UG628

Contextual Info: Spartan-6 FPGA Configuration User Guide UG380 v2.5 January 23, 2013 Notice of Disclaimer The information disclosed to you hereunder (the “Materials”) is provided solely for the selection and use of Xilinx products. To the maximum extent permitted by applicable law: (1) Materials are made available "AS IS" and with all faults, Xilinx hereby DISCLAIMS ALL

HM4716

Abstract: HM4864P2
Contextual Info: H M 4 8 6 4 - 2 , H M 4 8 6 4 - 3 - HM4864P-2, HM4864P-3 6 5 5 3 6 -word x 1-bit Dynamic Random A cce ss Memory The HM4864 is a 65,536-words by 1-bit, MOS random access memory circuit fabricated with H IT A C H I'S double-poly N-channel H M 4 86 4 -2 , H M 4864-3

AT45DBxxx

Abstract: AT45DBXX AT45DB321C tsop 28-LEAD Footprints AT45DB321 TSOP 28 SPI memory Package flash AT45DB321B EMBEDDED C programming for atmel 128 TSOP 28 SPI memory Package ATMEL Packaging information JEDEC SOIC
Contextual Info: Getting the Most Out of the New AT45DBxxxC DataFlash Family Introduction The AT45DB321C is the first member of a new family of low-cost, high-speed serialinterface DataFlash memories targeting a wide range of applications in the embedded and wireless markets. The AT45DB321C offers enhanced hardware and software features as well as smaller form factor packages optimized for a variety of digital voice,

AT45DCB008D

Abstract: atmel 952 date code AT45DB642D BA10 PA12 3542C
Contextual Info: Features • Single 2.7V - 3.6V Supply • Dual-interface Architecture • • • • • • • • • • • • • • – RapidS Serial Interface: 66 MHz Maximum Clock Frequency SPI Compatible Modes 0 and 3 – Rapid8™ 8-bit Interface: 50 MHz Maximum Clock Frequency

Contextual Info: 51C65H HIGH PERFORMANCE STATIC COLUMN 64K X 1 CHMOS DYNAMIC RAM Maximum Access Time ns Maximum Column Address Access Time (ns) • Static Column Mode Operation 51C65H-10 51C65H-12 100 120 55 65 ■ Fast “ Usable Speed’’ — C ontinuou s data rate ov e r 15 M H z

k22s

Abstract: HP 1003 WA
Contextual Info: iw VITELIC V53C258A FAMILY HIGH PERFORMANCE, LOW POWER 2 5 6 K X 1 B IT STATIC COLUMN CMOS DYNAMIC RAM ‘ 60/60L HIGH PERFORMANCE V53C25SA 70/70L 80/80L 10/10L Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns 100 ns Max. Column Address Access Time, (tCAA) 30 ns

AT45DB081B-RU

Abstract: AT45DB081 AT45DB081A AT45DB081B AT45DB081B-CC AT45DB081B-CNC PA10 PA11
Contextual Info: Features • • • • • • • • • • • • • Single 2.5V - 3.6V or 2.7V - 3.6V Supply Serial Peripheral Interface SPI Compatible 20 MHz Max Clock Frequency Page Program Operation – Single Cycle Reprogram (Erase and Program) – 4096 Pages (264 Bytes/Page) Main Memory

Contextual Info: intei M2118 FAMILY 16,384 x 1 BIT DYNAMIC RAM M IL IT A R Y M2118-4 120 270 320 Maximum Access Time ns Read, Write Cycle (ns) Read-Modify Cycle (ns) • Single +5V Supply, ±10% Tolerance M2118-7 150 320 410 ■ RAS Only Refresh ■ HMOS Technology ■ Low Power: 150 mW Max. Operating

Contextual Info: Features • Single 2.7V - 3.6V Supply • Dual-interface Architecture • • • • • • • • • • • • • • – RapidS Serial Interface: 66 MHz Maximum Clock Frequency SPI Compatible Modes 0 and 3 – Rapid8 8-bit Interface: 50 MHz Maximum Clock Frequency

V53C318160A

Contextual Info: V53C318160A 3.3 VOLT 1M X 16 FAST PAGE MODE CMOS DYNAMIC RAM MOSEL VITELIC HIGH PERFORMANCE 50 60 70 Max. RAS Access Time, tRAC 50 ns 60 ns 70 ns Max. Column Address Access Time, (tCAA) 25 ns 30 ns 35 ns Min. Fast Page Mode Cycle Time, (tPC) 35 ns 40 ns

V53C316165A

Contextual Info: V53C316165A 3.3 VOLT 1M X 16 EDO PAGE MODE CMOS DYNAMIC RAM MOSEL VITELIC HIGH PERFORMANCE 50 60 Max. RAS Access Time, tRAC 50 ns 60 ns Max. Column Address Access Time, (tCAA) 25 ns 30 ns Min. Extended Data Out Page Mode Cycle Time, (tPC) 20 ns 25 ns Min. Read/Write Cycle Time, (tRC)

2164 dynamic ram

Abstract: 2118 intel 2164 RAM Intel 2164 2164 intel 2164 tea 2164 g hidden refresh Intel 2118
Contextual Info: intei' 2164-25 65,536 x 1 BIT DYNAMIC RAM 2164-25 Maximum Access Time ns 250 Read, Write Cycle (ns) 465 Read-Modify-Write Cycle (ns) 530 • Industry Standard 16-pin DIP 128 Refresh Cycles/2 ms RAS-only Refresh ■ HMOS Technology Non-Latched Output is Three-State

Contextual Info: M OSEL VI TEL IC P R E L IM IN A R Y V 5 3C 1 6256H 2 5 6 K x 16 F A S T P A G E M O D E C M O S D Y N A M IC R A M HIGH PERFORMANCE 30 35 40 45 50 60 Max. RAS Access Tim e, tRAC 30 ns 35 ns 40 ns 45 ns 50 ns 60 ns Max. Column Address Access Time, (tCAA)

Contextual Info: M O SEL VI TELI C V 53C819HK H IG H P ER FO R M A NC E 512 K X 16 ED O P A G E MODE, DUAL RAS CM O S DYNAM IC R A M HIGH PERFORMANCE P R ELIM INA R Y 25 27 30 Max. RAS Access Tim e, tRAC 25 ns 27 ns 30 ns Max. Column Address Access Time, (tCAA) 13 ns 15 ns

Contextual Info: M O SEL VITELIC V53C311616500 3.3 VOLT 1 M X 16 EDO PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE 50 60 70 Max. RAS Access Time, Irac 50 ns 60 ns 70 ns Max. Column Address Access Time, (^ aa) 25 ns 30 ns 35 ns Min. Extended Data Out Page Mode Cycle Time, fcc)