CASE TO106 Search Results

case to-106

Abstract: SC1674 BF195C 195D 2N4080 2N917 10003 NPN BF194A BF 195D
Contextual Info: ADVANI OERLIKON/ SEMICOND 3bE D OPblbMfi O Q Q D O n □ • SELI I -T-Z“I-Q\ TELEVISION/VIDEO DEVICES SEMICONDUCTORS a I.F ./R .F . amplifiers and oscillators NPN TYPE PNP Case: To.92 Case: SOT*25 Pd = 250 mW PD=200 mW @ T8 25*C Case: To.106 Pd = 150 mW

SC1674

Abstract: bf 194B BF195D 195D 2N3866 2N917 2N918 SC1730 case to-106
Contextual Info: TELEVISION/VIDEO DEVICES / SEMICONDUCTORS a I.F./R.F. amplifiers and oscillators NPN PNP . Maximum Ratings TYPE Case: SOT-25 Case: To.92 Case:To.106 P d = 250 mW PD=200mW P d = 150 mW @Tac»25*C y /B F i j ^BF BF /B F @ Ta-26*C 194A 194B 195C 195D NPN PNP

cbr3-p

Contextual Info: 61C .00170 s T r à l - ' S ' 1989963 CENTRAL ’SEMICONDUCTOR n a n tB bl General ssEtfiieenducf&p c r p . e@ntra! 00DQ17D 3 J? 3 æ Sâ -*s CR1F SERIES FAST RECOVERY RECTIFIER s@ in i S © iid y cf s r C o r p . Central semiconductor Corp. AXIAL LEAD EPOXY CASE (CASE 101

transistor case To 106

Abstract: case to106 transistor 9003 VTT9002 VTT9003 to106 TO106 transistor
Contextual Info: .040" NPN Phototransistors VTT9002, 9003 Clear Epoxy TO-106 Ceramic Package PACKAGE DIMENSIONS inch mm CASE 8 TO-106 (FLAT) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package.

transistor case To 106

Abstract: TO 106 transistor VTT9102 opto 101 case to106 VTT9103 TO106 transistor
Contextual Info: .040" NPN Phototransistors VTT9102, 9103 Epoxy Lensed TO-106 Ceramic Package PACKAGE DIMENSIONS inch mm CASE 9 TO-106 (LENSED) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package.

transistor case To 106

Abstract: case to106 to106 VTT9102H VTT9103H
Contextual Info: .040" NPN Phototransistors VTT9102H, 9103H Epoxy Lensed TO-106 Ceramic Package PACKAGE DIMENSIONS inch mm CASE 9 TO-106 (LENSED) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package.

transistor case To 106

Abstract: TO-106 to106 VTT9002H
Contextual Info: .040" NPN Phototransistors VTT9002H, 9003H Clear Epoxy TO-106 Ceramic Packag PACKAGE DIMENSIONS inch mm CASE 8 TO-106 (FLAT) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package.

Contextual Info: .040" NPN Phototransistors VTT9002H, 9003H Clear Epoxy TO-106 Ceramic Packag PACKAGE DIMENSIONS inch mm CASE 8 TO-106 (FLAT) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package.

VTT9102h

Contextual Info: .040" NPN Phototransistors VTT9102H, 9103H Epoxy Lensed TO-106 Ceramic Package PACKAGE DIMENSIONS inch mm CASE 9 TO-106 (LENSED) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package.

C5Z15B

Abstract: 5 watt zener diode
Contextual Info: CENTRAL SEMICONDUCTOR , £j¡ \ j>f| nfl«nb3 ODDOat-S 3 Y ^ l/'tS ^ 3 Watt Zener Diode • 5% Tolerance • Case C CENTRAL TYPE NO. C3Z6.2B C3Z6.8B C3Z7.5B C3Z8.2B C3Z9.1B C3Z10B C3Z11B C3Z12B C3Z13B C3Z14B C3Z15B C3Z16B C3Z17B C3Z18B C3Z19B C3Z20B C3Z22B

IN5374B

Abstract: in5374 IN5373B C3Z10B C3Z11B C3Z12B C3Z47B C3Z50B Zener Diode 1N5368B C3Z52B
Contextual Info: CENTRAL CENTRAL TYPE NO. SEMICONDUCTOR , 3 Watt Zener Diode • 5% Tolerance • Case C Zener Voltage Vz@lz Test Current Iz Zener Impedance Zz Maximum Zener Current IZM mA Volts mA Ohms C3Z6.2B C3Z6.8B C3Z7.5B C3Z8.2B C3Z9.1B 6.2 6.8 7.5 8.2 9.1 75 75 75 75

AD5812

Abstract: LEMF3225 LEMC3225
Contextual Info: 高周波巻線チップインダクタ WOUND CHIP INDUCTORS FOR HIGH FREQUENCY LBH SERIES OPERATING TEMP. K25VJ85C 特長 FEATURES YDimention attaches much importance to characteristics of mount case. YThe product has excellent Q and SRF because, wound chip inductor.

2sc 9015

Abstract: 2SC644 CS9015 2N4248 scr 4059 transistor MPS 6518 mpsa09 2SC923 2N3550 2SC644 transistor
Contextual Info: 7 -. SEMICONDUCTORS INC OIE I | SlBktSO 0000275 1 | ¿Lf-/? TYPE NO. ; POLARITY 1 Audio Frequency Small Signal Transistors MAXIMUM RATINGS CASE HFE Pd mW) >C (mA) VCEO (V) min max •c (mA) VCE (V) VCE(SAT) max ■c (V) (mA) fT min (MHz) Cob max (pF) 5+

VTT9102

Abstract: VTT1212 VTT1214 VTT9002 VTT9003 VTT9103 opto 101 case to106 transistor To-106 transistor case To 106
Contextual Info: .040" NPN Phototransistors VTT1212, 1214 Clear T-1¾ 5 mm Plastic Package PACKAGE DIMENSIONS inch (mm) CASE 26 T-1 ¾ (5 mm) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high speed NPN silicon phototransistor possessing excellent sensitivity and good speed mounted

CR3U-005

Contextual Info: l?g?63 CENTRAL' SEMICONDUCTOR ~ >1 61C 00172 T - 0 3 -1 5 DE l D0DD17g 7 | c e n t r e il CR3U seBisieonsiMetoF e@rp. Central seiüieaitäyctor Corp. central Semiconductor Corp. SERIES ULTRA FAST RECOVERY RECTIFIER CASE 103 145 Adams Avenue Hauppauge, New York 11788

LZ-230 zener diode

Abstract: lz 04 "50 watt zener diode" zener 7.5 B 47
Contextual Info: CENTRAL SEMICONDUCTOR T ï de | n t m t 3 □□oost.b s /,f 10 Watt Zener Diode • 5% Tolerance • Case D Do-4 TYPE NO. Zener Voltage V z @ lz Test Current lz Zener Impedance Zz Maximum Zener Current |ZM TYPE NO. Zener Voltage V z @ lz Test Current lz

2sd 5023

Abstract: transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945
Contextual Info: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE •c (A) VCEO IV) min 40 35 40 40 40 VCE(SAT) max ■c (A) (VÏ COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1

50 Watt Zener Diode

Abstract: 10 watt zener diode LN298 1N2990B TLC 1050 diode Lz zener ZENER DIODE 1N2976B zener diode 1n4553B 6.8 B1 zener 1N2991B
Contextual Info: CENTRAL SEMICONDUCTOR T ï de | n t m t 3 □□oost.b s /,f 10 Watt Zener Diode • 5% Tolerance • Case D Do-4 TYPE NO. Zener Voltage V z @ lz Test Current lz Zener Impedance Zz Maximum Zener Current IZM TYPE NO. Zener Voltage V z @ lz Test Current lz

2sd 5023

Abstract: bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345
Contextual Info: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE ic (A) VCEO IV) min max 40 35 40 40 40 120 VCE(SAT) max (A) (Vï COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1

IN4706

Abstract: 1N46A
Contextual Info: 61C 00277 1989963 CENTRAL SEMICONDUCTOR : :V~TÏ g ngi?ga9 g KHS@©BBe3e5gfi@E? @®r;po €©&a€ffS9B D E | l'iôT'it.B '-T-'U 'D '? 0000577 | 1NA678 THRU 1 N 4 7 H LOW LEVEL SILICON ZENER DIODE C@iifral Ê@üîis@Bîeisgst csr JEDEC DO-7 CASE central

T-75 DIODE

Abstract: Germanium DO-35 DIODE Germanium Power Diodes diodes ir 5
Contextual Info: I [ »."¿'ix fOÔ Ï9 0 1 9 Ô 9 9 6 3 " t ËM 'tR Â C ^SËMlCQKlOÜd^Ofe DE J j ^emisonductor e@rp. Central Central 2 |~ J ? CDSH-L SERI ES *1 semiconductor DESCRIPTION ODDOSTO SILICON LOW CURRENT SCHOTTKY BARRIER DIODE JEDEC DO-35 CASE corn. The CENTRAL SEMICONDUCTOR

Z9.1B

Abstract: Z62B Z6.2B Z8.2B Z82B Z6.8B CBR-12 DIODE Z8.2B z91b Z6,2B
Contextual Info: CENTRAL SEM ICOND UC TO R *~ t3 1 WATT ZENER DIODE CSBIfiFial S0Oiiie@si&]eigt'@r €@pp, S in fr a l 6 .2 -2 0 0 VOLTS, 5% semlcpitäluetor Corp. Central semiconductor Corp. AXIAL LEAD D015 EPOXY CASE C1Z 6.2B SERIES 145 Adams Avenue Hauppauge, New York 1 17 88

2SA495

Abstract: 2N4288 2N5133 2SA640 2N4291 2N4248 2SA564 2N4249 2SA545 2SA561
Contextual Info: Low Level and General Purpose Amplifiers TYPE NO. POLA­ CASE RITY Pd IC VCEO mW (mA) (V) min fT Cob N.F. IC min max max VCE(sat) HFE MAXIMUM RATINGS max IC VCE max (mA) (V) (V) (mA) (MHz) (MHi) (dB) _ 2N4061 2N4062 2N4248 2N4249 2N4250 P P P P P TO-92B

MEU22

Abstract: 2N6027 2N6028 BRY39 BRY56 BRY56A MEU21 pnp to106
Contextual Info: Special Devices PROGRAMMABLE UNIJUNCTION TRANSISTORS MAXIMUM RATINGS TYPE NO. CASE Pd mW IA (mA) BVGKF (V) VF VT IP max IF (mA) (V) max Ö*A) max IV (MA) max 5 0.22 50 2 100 100 10 10 (V) IGKS (nA) max IGAO (nA) max BRY56 BRY56A TO-92BA TO-92BA 300 300 175