CAS NUMBER Search Results

LTS 6-NP

Abstract: LTS 15-NP CAS 6-NP LTSR 15-NP LTSR 6-NP ch-1228 cksr6-np LTSR 25-NP CASR50-NP 743 LEM
Contextual Info: Technical Information CAS / CASR / CKSR series Current Transducers Insulated Highly Accurate Measurements from 1.5 to 50 ARMS CAS / CASR / CKSR series Current Transducers Future precision. Future performances. Now available. CAS / CASR / CKSR series Current Transducers

Contextual Info: in te l 28F016XD 16-MBIT 1 MBIT X 16 DRAM-INTERFACE FLASH MEMORY Backwards-Compatible with 28F016SA/SV, 28F008SA Command Set 85 ns Access Time (tRAc) Multiplexed Address Bus RAS# and CAS# Control Inputs No-Glue Interface to Many Memory Controllers SmartVoltage Technology

Contextual Info: IBM13T4644MPB IBM13T8644MPB Preliminary 4M/8M x 64 SDRAM SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 4/8Mx64 Synchronous DRAM SO DIMM • Performance: -10 CAS Latency i Units Ì 3 | fcK | Clock Frequency

M12L64164A-7T

Contextual Info: ESMT M12L64164A SDRAM 1M x 16 Bit x 4 Banks Synchronous DRAM FEATURES ORDERING INFORMATION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3 - Burst Length (1, 2, 4, 8 & full page)

Contextual Info: in t e l 28F016XD 16-MBIT 1 MBIT x 16 DRAM-INTERFACE FLASH MEMORY 85 ns Access Time (tRAC) — Supports both Standard and FastPage-Mode Accesses Multiplexed Address Bus — RAS# and CAS# Control Inputs No-Glue Interface to Many Memory Controllers SmartVoltage Technology

Contextual Info: IBM13Q8739CC 8M x 72 Buffered SDRAM Module Features • 200-Pin emerging JEDEC Standard, Buffered 8Byte Dual In-line Memory Module • 8M x 72 Synchronous DRAM DIMM • Performance: CAS Latency = 2* -10 j Units j ! MHz j ; ns jfcK j Clock Frequency 66 ; tcK2

NT5TU32M16BG-3C

Abstract: nt5tu64m8be 128 MB DDR2 SDRAM Nanya nt5tu32m16bg3c NT5TU32M16BG NTC 2.5D -15 NT5TU128M4BE-3C
Contextual Info: NT5TU128M4BE NT5TU64M8BE NT5TU32M16BG 512Mb DDR2 SDRAM B-Die Features • 1.8V ± 0.1V Power Supply Voltage 2k page size for x16 • 4 internal memory banks • Data-Strobes: Bidirectional, Differential • Programmable CAS Latency: 3, 4, 5, and 6 • Strong and Weak Strength Data-Output Driver

Contextual Info: Enhanced Memory Systems Inc. 4Mx4, 2 M x 8 ,1 Mx16 16Mbit Enhanced Synchronous DRAM preliminary Data sheet Overview Features • High Perform ance: CAS latency = 2 • P rogram m able Burst Length: 1,2,4,8,full-page • P rogram m able W rap Sequence, S equential or

Contextual Info: IBM0165805B IBM0165805P 8 M x 8 12/11 EDO DRAM Features • 8,388,608 word by 8 bit organization Read-Modify-Write • Single 3.3 ± 0.3V power supply Performance: • Extended Data Out CAS before RAS Refresh - 4096 cycles/Retention Time RAS only Refresh - 4096 cycles/Retention Time

Contextual Info: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVED2M361JSQW-XX FAST PAGE MODE, 2M X 36 SIMM Using 1M X 16 DRAM and 1M X 4 QUAD CAS DRAM, 1K REFRESH, 5V DESCRIPTION PIN CONFIGURATIONS AVED Memory Products AVED2M361JSQW-XX is a 2M bit X 36 Dynamic RAM high density memory module.

Contextual Info: 16 Meg FPM DRAM AS4C4M4 4M x 4 CMOS DRAM PIN ASSIGNMENT Top View WITH FAST PAGE MODE, 5 VOLT 24 Pin TSOP (DG) AVAILABLE AS MILITARY SPECIFICATIONS • MIL-STD-883 FEATURES • Fast Page Mode Operation • CAS\-before-RAS\ Refresh Capability • RAS\-only and Hidden Refresh Capability

Contextual Info: •nt- * K 1 Ö M IFÜ KlüS lÄTO IM in te i 89C124FX DATA/FAX MODEM CHIP SET 9600 bps Send and Receive FAX CHMOS fo r Low Operating Power V.29 and V.27ter Compatible Low Standby Power Supports Communicating Applications Specification CAS On-Chip Hybrid

Contextual Info: IBM13M8734HCB 8M x 72 1 B ank R egistered S D R A M M odule Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 8Mx72 Synchronous DRAM DIMM • Performance: : ; DIMM CAS Latency • • • • • • • ; -75A Reg. 4 ; Units ; fCK ; Clock Frequency

Contextual Info: IB M 1 1 S 8 3 2 0 H P 8M x 32 SO DIMM Module Features • 72-Pin Small Outline Dual-ln-Line Memory Module • Performance: • • • • • • 60 W c RAS Access Time 60ns I tcAC CAS Access Time 15ns I AA Access Time From Address 30ns I RC Cycle Time 110ns I

Contextual Info: SMJ44C256 262,144-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY 2 6 2 .1 4 4 x 4 Organization JD PACKAGE T O P V IE W Single 5-V Supply (10% Tolerance) D Q l[ 1 U 2 0 > s s 19 Ü D Q 4 DQ2[ 2 18 D DQ3 wC 3 17 ] CAS R ASd 4 16 3 5 5 A0[ 6 15 ] A8 A1[ 7 14 ] A 7

GR30CORE SDMF

Abstract: 8751 microcontroller METAL DETECTOR using microcontroller GR-30-CORE MSAN-164 MT8841 MT8843 KEYPAD PHONE capacitor 100n "caller ID" "type 2" hybrid
Contextual Info: MSAN-164 Application Note Application of the MT8843 Calling Number Identification Circuit 2 CONTENTS ISSUE1 October 1996 Introduction 1. Introduction 2. Compliances - Bellcore GR-30-CORE - Bellcore CIDCW Signalling - Challenges in the CIDCW Signalling Environment

pbt 17

Abstract: calcium stearate
Contextual Info: MATERIAL DECLARATION SHEET Material Number 81 L Cermet Single Cup Product Line Panel Control Compliance Date September 30, 2005 RoHS Compliant Yes No. 1 2 3 4 Construction Element (subpart) Rotor Driver Shaft Rivet X4 Substrate Headquarters Riverside CA

magnesium hydroxide

Abstract: H-22-6A
Contextual Info: MATERIAL DECLARATION SHEET Material Number H-22-6A Product Line Turn Counting Dials Compliance Date Since Inception RoHS Compliant Yes No. 1 Construction Element subpart Base MSL Homogeneous Material Zinc Alloy Plating 2 Dial graduated Headquarters Riverside CA

00829

Abstract: switch Bakelite
Contextual Info: MATERIAL DECLARATION SHEET Material Number PTM Product Line Rotary Potentiometer Compliance Date May 4, 2006 RoHS Compliant Yes No. 1 Construction Element subpart Element Terminal MSL Homogeneous Material Steel N/A Material weight [g] 0.102 Plating 2 3 Element

7440-47-3

Contextual Info: MATERIAL DECLARATION SHEET Material Number 81-L CP Single Cup Product Line Panel Control Compliance Date September 30, 2005 RoHS Compliant Yes No. Construction Element (subpart) 1 Rotor Driver 2 Shaft 3 4 Rivet X4 Substrate Headquarters Riverside CA MSL

carbonate

Abstract: CONDUCTIVE INK
Contextual Info: MATERIAL DECLARATION SHEET Material Number EN-L Product Line Encoder Compliance Date March 31, 2006 RoHS Compliant Yes No. 1 Construction Element subpart Substrate X 2 MSL Homogeneous Material Ceramic N/A Material weight [g] 2.5 Homogeneous Material/ Substances

cpu schematic

Abstract: 82385 t1ts MECL System Design Handbook AP-442 f245 motorola 386DX EDN handbook cmos disadvantages 74AS646
Contextual Info: AP-442 APPLICATION NOTE 33 MHz 386 System Design Considerations SHAHZAD BAQAI KIYOSHI NISHIDE May 1990 Order Number 240725-001 Information in this document is provided in connection with Intel products Intel assumes no liability whatsoever including infringement of any patent or copyright for sale and use of Intel products except as provided in

phenolformaldehyde resin

Abstract: Polytetrafluoroethylene DSA0029684
Contextual Info: MATERIAL DECLARATION SHEET Material Number 3590S-6-L Product Line Precision Potentiometer Compliance Date May 31, 2006 RoHS Compliant Yes No. Construction Element subpart 1 Mandrel 2 3 4 Resist Wire Varnish Housing Headquarters Riverside CA MSL N/A 100 Material

Contextual Info: MATERIAL DECLARATION SHEET Material Number 0037-006-ABXXX Product Line Sensors and Control Compliance Date May 25, 2006 RoHS Compliant yes No. Construction Element subpart MSL Homogeneous Material Copper Zinc 1 2 NA Material weight [g] 0.115 Screw Plating