CAL DIODE Search Results

GB01SHT12-CAL SPICE

Abstract: high-temperature-sic-bare-die
Contextual Info: Die Datasheet GB01SHT12-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB01SHT12-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * *

GB01SHT06-CAL SPICE

Abstract: high-temperature-sic-bare-die
Contextual Info: Die Datasheet GB01SHT06-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB01SHT06-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc.

GB05SHT06-CAL SPICE

Abstract: high-temperature-sic-bare-die
Contextual Info: Die Datasheet GB05SHT06-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB05SHT06-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * * * * * * * $Revision: 1.0 $Date: 05-SEP-2013

GB20SHT06-CAL SPICE

Abstract: high-temperature-sic-bare-die
Contextual Info: Die Datasheet GB20SHT06-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB20SHT06-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc.

GB05SHT12-CAL SPICE

Abstract: high-temperature-sic-bare-die
Contextual Info: Die Datasheet GB05SHT12-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB05SHT12-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * *

Semikron skiip 22 nab 12

Abstract: semikron skiip 31 nab 12 T 18 SKiiP 33 NEC 125 To SEMIKRON SKIIP 20 NAB 12 T 45 semikron skiip 20 nab 12 I T 38 semikron skiip 83 ec Semikron skiip 31 nab 12 T 16 semikron skiip 31 nab 125 t 12 Semikron skiip 30 nab 12 semikron skiip 33 NEC 125
Contextual Info: fil3bt,71 D 0 0 b 74 D B MiniSKiiP o CO motor power |kW| Designation Ä MiniSKiiP ratings for basic AC/AC circuits rectifier brake chopper l-|A| VfcES., current temp Cal M /„ sWmts sensor diode P lf 25“C inverter Rth|h* [K/W] IGBT/ CAL diode size 5,0/4,0

GAP3SHT33-CAL SPICE

Abstract: high-temperature-sic-bare-die
Contextual Info: Die Datasheet GAP3SHT33-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GAP3SHT33-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 04-SEP-2013 $ * *

GB20SHT12-CAL SPICE

Abstract: high-temperature-sic-bare-die
Contextual Info: Die Datasheet GB20SHT12-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB20SHT12-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * *

U820 diode

Abstract: LP2985A-10 DALE R005 diode u820 diode c820
Contextual Info: User's Guide SBOU089 – August 2010 Multi-Cal-Master Evaluation Module This user’s guide describes the characteristics, operation, and the use of the Multi-Cal-Master evaluation module EVM . It covers all pertinent areas involved to properly use this EVM board. The document

U820 diode

Abstract: dale R003 LP2985A-10 DALE R005
Contextual Info: User's Guide SBOU094 – September 2010 Multi-Cal-Slave Evaluation Module This user’s guide describes the characteristics, operation, and the use of the Multi-Cal-Slave evaluation module EVM . It covers all pertinent areas involved to properly use this EVM board. The document

LM95221

Abstract: ADC083000 ADC08B3000 ADC08D1500
Contextual Info: National Semiconductor Application Note 1727 Robbie Shergill March 6, 2008 1.0 Introduction The user does this by holding the CAL pin high during powerup and keeping it high for as long a delay as desired. The device will wait until the CAL pin is cycled low and then high

LP2985A-10

Abstract: R707 U820 diode PTC C970
Contextual Info: User's Guide SBOU087A – August 2010 – Revised April 2011 Multi-Cal-System Evaluation Module This user’s guide describes the characteristics, operation, and the use of the Multi-Cal-System evaluation module EVM . It covers all pertinent areas involved to properly use this EVM board. The document

Contextual Info: Electrical Datasheet* GB05SHT12-CAL Silicon Carbide Power Schottky Diode Chip Features •       1200 V Schottky rectifier 250 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability

Contextual Info: Electrical Datasheet* GB10SLT06-CAL Silicon Carbide Power Schottky Diode Chip Features •       650 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability

Contextual Info: Electrical Datasheet* GB20SHT12-CAL Silicon Carbide Power Schottky Diode Chip Features •       1200 V Schottky rectifier 250 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability

Contextual Info: Electrical Datasheet* GB01SHT12-CAL Silicon Carbide Power Schottky Diode Chip Features •       1200 V Schottky rectifier 250 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability

Contextual Info: Electrical Datasheet* GAP05SLT80-CAL Silicon Carbide Power Schottky Diode Chip Features •     8000 V Silicon Carbide Schottky rectifier 175 °C maximum operating temperature Positive temperature coefficient of VF Extremely fast switching speeds

Contextual Info: Electrical Datasheet* GB01SHT06-CAL Silicon Carbide Power Schottky Diode Chip Features •       650 V Schottky rectifier 250 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability

Contextual Info: Electrical Datasheet* GA01PNS100-CAL Silicon Carbide PiN Diode Chip Features •     10 kV blocking 250 °C operating temperature Fast turn off characteristics Soft reverse recovery characteristics Ultra-Fast high temperature switching Advantages

Contextual Info: Electrical Datasheet* GB05SHT06-CAL Silicon Carbide Power Schottky Diode Chip Features •       650 V Schottky rectifier 250 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability

Contextual Info: Electrical Datasheet* GB02SLT06-CAL Silicon Carbide Power Schottky Diode Chip Features •       650 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability

IEC-801-4

Abstract: diode zener 22A
Contextual Info: SEM ICONDUCTOR SMAJ22A TECHNI CAL DATA Surface M ount TVS Diode Features • Plastic package has underwriters laboratory flammability classification 94V-0. • Optimized for LAN protection applications. • Ideal for ESD protection o f data lines in accordance

Contextual Info: Electrical Datasheet* GA01PNS80-CAL Silicon Carbide PiN Diode Chip Features •     8 kV blocking 250 °C operating temperature Fast turn off characteristics Soft reverse recovery characteristics Ultra-Fast high temperature switching Advantages

SKiiP 33 NEC 125 To

Abstract: semikron skiip 33 NEC 125 skiip 33 nec 125 t semikron ASIC SKIC semikron skiip 33 nec Semikron Semitop sk 70 kq 12 skiip 11 nec 06 1 Semikron Semitop sk 45 kq 12 MiniSKiiP 8 semikron skiip 33
Contextual Info: MiniSKiiP Technologie
Druckkontakte bei allen Leistungs- und Hilfsanschlüssen anstelle von Lötverbindungen.
Integration der neuesten Chiptechnologie: • • • • Niedrige Schaltverluste bei 600 V oder 1200 V, homogene NPT IGBTs mit antiparallel geschalteten CAL-Dioden