GB01SHT06 Search Results

Contextual Info: Die Datasheet GB01SHT06-CAU High Temperature Silicon Carbide Power Schottky Diode VRRM o IF @ 25 C QC = = = 650 V 2.5 A 7 nC Features •        650 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge

Contextual Info: Electrical Datasheet* GB01SHT06-CAU Silicon Carbide Power Schottky Diode Chip Features •       650 V Schottky rectifier 250 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability

GB01SHT06-CAL SPICE

Abstract: high-temperature-sic-bare-die
Contextual Info: Die Datasheet GB01SHT06-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB01SHT06-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc.

GB01SHT06-CAU SPICE

Abstract: high-temperature-sic-bare-die
Contextual Info: Die Datasheet GB01SHT06-CAU SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB01SHT06-CAU. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc.

Contextual Info: Die Datasheet GB01SHT06-CAL High Temperature Silicon Carbide Power Schottky Diode VRRM o IF @ 25 C QC = = = 650 V 2.5 A 7 nC Features •        650 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge

Contextual Info: Electrical Datasheet* GB01SHT06-CAL Silicon Carbide Power Schottky Diode Chip Features •       650 V Schottky rectifier 250 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability