GAP3SHT33 Search Results

Contextual Info: Die Datasheet GAP3SHT33-CAL Silicon Carbide Power Schottky Diode VRRM o IF @ 25 C QC = = = 3300 V 0.3 A 20 nC Features •     3300 V Schottky rectifier 250 °C maximum operating temperature Positive temperature coefficient of VF Fast switching speeds

GAP3SHT33-CAL SPICE

Abstract: high-temperature-sic-bare-die
Contextual Info: Die Datasheet GAP3SHT33-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GAP3SHT33-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 04-SEP-2013 $ * *

Contextual Info: Die Datasheet GAP3SHT33-CAU Silicon Carbide Power Schottky Diode VRRM o IF @ 25 C QC = = = 3300 V 0.3 A 20 nC Features •     3300 V Schottky rectifier 250 °C maximum operating temperature Positive temperature coefficient of VF Fast switching speeds

Contextual Info: GAP3SHT33-CAU Silicon Carbide Power Schottky Diode Chip VRRM VF IF QC = = = = 3300 V 1.7 V 0.3 A 52 nC Features •      3300 V Schottky rectifier 175 °C maximum operating temperature Electrically isolated base-plate Positive temperature coefficient of VF

Contextual Info: GAP3SHT33-CAL Silicon Carbide Power Schottky Diode Chip VRRM VF IF QC = = = = 3300 V 1.7 V 0.3 A 52 nC Features •      3300 V Schottky rectifier 175 °C maximum operating temperature Electrically isolated base-plate Positive temperature coefficient of VF

GAP3SHT33-CAU SPICE

Abstract: high-temperature-sic-bare-die
Contextual Info: Die Datasheet GAP3SHT33-CAU SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GAP3SHT33-CAU. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 04-SEP-2013 $ * *