GAP05SLT80 Search Results

Contextual Info: GAP05SLT80-220 Silicon Carbide Power Schottky Diode VRRM IF QC = = = 8000 V 50 mA 8 nC Features •     Industry’s leading low leakage currents 175 °C maximum operating temperature Positive temperature coefficient of VF Extremely fast switching speeds

Contextual Info: Electrical Datasheet* GAP05SLT80-CAL Silicon Carbide Power Schottky Diode Chip Features •     8000 V Silicon Carbide Schottky rectifier 175 °C maximum operating temperature Positive temperature coefficient of VF Extremely fast switching speeds

GAP05SLT80-CAL SPICE

Abstract: high-temperature-sic-bare-die
Contextual Info: Die Datasheet GAP05SLT80-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GAP05SLT80-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.1 $ * $Date: 15-SEP-2014 $ * *

Contextual Info: GAP05SLT80-220 SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GAP05SLT80-220. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.1 $ * $Date: 15-SEP-2014 $ * * GeneSiC Semiconductor Inc.

GAP05SLT80-CAL

Abstract: high-temperature-sic-bare-die
Contextual Info: Die Datasheet GAP05SLT80-CAL Silicon Carbide Power Schottky Diode VRRM IF QC = = = 8000 V 50 mA 8 nC Features •     8000 V Silicon Carbide Schottky rectifier 175 °C maximum operating temperature Positive temperature coefficient of VF Extremely fast switching speeds