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Navitas Semiconductor


Navitas Semiconductor GB20SHT06-CAL SiC Schottky Diodes SiC 650V 20A 225DegC AI Top and Au Bottom
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	GB20SHT06-CAL					1 - 10 - 100 $133.00 1000 $133.00 10000 $133.00	Get Quote
Onlinecomponents.com	GB20SHT06-CAL					1 - 10 - 100 $126.37 1000 $126.37 10000 $126.37	Buy Now
Navitas Semiconductor GB20SHT06-CAU SiC Schottky Diodes SiC650V 20A 225DegC Au Top and Au Bottom
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	GB20SHT06-CAU					1 - 10 - 100 $187.53 1000 $187.53 10000 $187.53	Get Quote
Onlinecomponents.com	GB20SHT06-CAU					1 - 10 - 100 $178.18 1000 $178.18 10000 $178.18	Buy Now

GB20SHT06 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Die Datasheet High Temperature Silicon Carbide Power Schottky Diode GB20SHT06-CAL VRRM o IF @ 25 C QC = = = 650 V 30 A 66 nC Features •        650 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge	Original	GB20SHT06-CAL Mil-PRF-19500 GB20SHT06 46E-17 00E-05 26E-09 00E-10 00E-03	PDF
Contextual Info: Electrical Datasheet* GB20SHT06-CAU Silicon Carbide Power Schottky Diode Chip Features •       650 V Schottky rectifier 250 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability	Original	GB20SHT06-CAU CharacteristiSHT06 GB05SHT06 46E-17 00E-05 26E-09 00E-10 00E-03	PDF
GB20SHT06-CAL SPICE Abstract: high-temperature-sic-bare-die Contextual Info: Die Datasheet GB20SHT06-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB20SHT06-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc.	Original	GB20SHT06-CAL GB20SHT06-CAL. 05-SEP-2013 GB20SHT0ODE GB20SHT06 46E-17 00E-05 26E-09 GB20SHT06-CAL SPICE high-temperature-sic-bare-die	PDF
Contextual Info: Electrical Datasheet* GB20SHT06-CAL Silicon Carbide Power Schottky Diode Chip Features •       650 V Schottky rectifier 250 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability	Original	GB20SHT06-CAL CharacteristiSHT06 GB05SHT06 46E-17 00E-05 26E-09 00E-10 00E-03	PDF
GB20SHT06-CAU SPICE Abstract: high-temperature-sic-bare-die Contextual Info: Die Datasheet GB20SHT06-CAU SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB20SHT06-CAU. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc.	Original	GB20SHT06-CAU GB20SHT06-CAU. 05-SEP-2013 GB20SHT0ODE GB20SHT06 46E-17 00E-05 26E-09 GB20SHT06-CAU SPICE high-temperature-sic-bare-die	PDF
Contextual Info: Die Datasheet High Temperature Silicon Carbide Power Schottky Diode GB20SHT06-CAU VRRM o IF @ 25 C QC = = = 650 V 30 A 66 nC Features •        650 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge	Original	GB20SHT06-CAU Mil-PRF-19500 GB20SHT06 46E-17 00E-05 26E-09 00E-10 00E-03	PDF