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Navitas Semiconductor


Navitas Semiconductor GB05SHT06-CAL SiC Schottky Diodes SiC 650V 5A 225Deg C AI Top and Au Bottom
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	GB05SHT06-CAL					1 - 10 - 100 $63.84 1000 $63.84 10000 $63.84	Get Quote
Onlinecomponents.com	GB05SHT06-CAL					1 - 10 - 100 $98.00 1000 $98.00 10000 $98.00	Buy Now
Navitas Semiconductor GB05SHT06-CAU SiC Schottky Diodes SiC 650V 5A 225 DegC Au Top and Au Bottom
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	GB05SHT06-CAU					1 - 10 - 100 $66.20 1000 $66.20 10000 $66.20	Get Quote
Onlinecomponents.com	GB05SHT06-CAU					1 - 10 - 100 $139.00 1000 $139.00 10000 $139.00	Buy Now

GB05SHT06 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Die Datasheet GB05SHT06-CAL High Temperature Silicon Carbide Power Schottky Diode VRRM o IF @ 25 C QC = = = 650 V 8A 20 nC Features •        650 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge	Original	GB05SHT06-CAL Mil-PRF-19500 GB05SHT06 99E-17 87E-05 38E-10 00E-10 00E-03	PDF
Contextual Info: Die Datasheet GB05SHT06-CAU High Temperature Silicon Carbide Power Schottky Diode VRRM o IF @ 25 C QC = = = 650 V 8A 20 nC Features •        650 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge	Original	GB05SHT06-CAU Mil-PRF-19500 GB05SHT06 99E-17 87E-05 38E-10 00E-10 00E-03	PDF
GB05SHT06-CAU SPICE Abstract: high-temperature-sic-bare-die Contextual Info: Die Datasheet GB05SHT06-CAU SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB05SHT06-CAU. * MODEL OF GeneSiC Semiconductor Inc. * * * * * * * * $Revision: 1.0 $Date: 05-SEP-2013	Original	GB05SHT06-CAU GB05SHT06-CAU. 05-SEP-2013 GB05SHT06 99E-17 87E-05 38E-10 00E-10 GB05SHT06-CAU SPICE high-temperature-sic-bare-die	PDF
Contextual Info: Electrical Datasheet* GB05SHT06-CAU Silicon Carbide Power Schottky Diode Chip Features •       650 V Schottky rectifier 250 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability	Original	GB05SHT06-CAU GB05SHT06 99E-17 87E-05 38E-10 00E-10 00E-03	PDF
Contextual Info: Electrical Datasheet* GB05SHT06-CAL Silicon Carbide Power Schottky Diode Chip Features •       650 V Schottky rectifier 250 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability	Original	GB05SHT06-CAL GB05SHT06 99E-17 87E-05 38E-10 00E-10 00E-03	PDF
GB05SHT06-CAL SPICE Abstract: high-temperature-sic-bare-die Contextual Info: Die Datasheet GB05SHT06-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB05SHT06-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * * * * * * * $Revision: 1.0 $Date: 05-SEP-2013	Original	GB05SHT06-CAL GB05SHT06-CAL. 05-SEP-2013 GB05SHT06 99E-17 87E-05 38E-10 00E-10 GB05SHT06-CAL SPICE high-temperature-sic-bare-die	PDF
Contextual Info: Electrical Datasheet* GB20SHT06-CAU Silicon Carbide Power Schottky Diode Chip Features •       650 V Schottky rectifier 250 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability	Original	GB20SHT06-CAU CharacteristiSHT06 GB05SHT06 46E-17 00E-05 26E-09 00E-10 00E-03	PDF
Contextual Info: Electrical Datasheet* GB20SHT06-CAL Silicon Carbide Power Schottky Diode Chip Features •       650 V Schottky rectifier 250 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability	Original	GB20SHT06-CAL CharacteristiSHT06 GB05SHT06 46E-17 00E-05 26E-09 00E-10 00E-03	PDF