C308 Search Results

Contextual Info: E 6 & 6/CANADA/OP TOELEK R C /1 3D30blD DDD01DS 33T « C A N A 10 T - V /- Photodiode C30817 DATA SH EET Optics Silicon Avalan che Photodiode for G e n eral-Purp ose Applications • High Quantum Efficiency — 85% typical at 900 nm — 18% typical at 1060 nm

tic 1060

Contextual Info: E G & G/C ANADA/OPTOELEK ID 303Qb]>a DOOGIGI 7^3 « C A N A Photodiode i t e i C30807, C30808, C30809 Optics E ,e c t n o l C30810, C30822, C30831 DATA SHEET V l ’ S " 3 N-Type Silicon p-i-n Photodetectors L-571 C30810 1-568 C30807 C30831 C30808 C30809,

C3088

Abstract: ov6620 omnivision EVALUATION BOARD C3088 CMOS Camera OmniVision CMOS Camera Module OV6620 omnivision EVALUATION BOARD camera interface c3088 CCIR656 camera omnivision cmos OmniVision CMOS pcb
Contextual Info: C3088 1/4” Color Camera Module With Digital Output General Description The C3088 is a 1/4” color camera module with digital output. It uses OmniVision’s CMOS image sensor OV6620. Combining CMOS technology together with an easy to use digital interface makes C3088 a low cost solution for higher quality video

C30872

Abstract: RCA 410 RCA H 410 c30872 application notes ir photodiode 0351 S546 photodiode avalanche u 5601 TO8 package
Contextual Info: E G & G/CANADA/OPTOELEK I t C i l IO D • 3G30L1G OGDD11S S6ñ « C A N A Electro Optics Photodiode C30872 DATA SHEET Large Area Silicon Avalanche Photodiode for General-Purpose Applications IHigh Quantum Efficiency — 85% typical at 900 nm 18% typical at 1060 nm

BTPA92N3

Abstract: SOT-23 2D transistor marking 2d ghz
Contextual Info: Spec. No. : C308N3-H Issued Date : 2003.06.27 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTPA92N3 Description • High breakdown voltage. BVCEO=-300V • Low collector output capacitance. • Ideal for chroma circuit.

Transistor TO-92 A92

Abstract: 1902 transistor BTPA92A3
Contextual Info: Spec. No. : C308A3 Issued Date : 2003.06.27 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTPA92A3 Description • High breakdown voltage. BVCEO=-300V • Low collector output capacitance. • Ideal for chroma circuit.

C30844

Abstract: C30845 rca 632 quadrant photodiode rca C30846 quadrant photodiode 303dbl0 92LS-S56S "S56S" PIN quadrant detector
Contextual Info: RC/1 E G & G/CA N A D A / O P T OELEK 3G30fc.lD ODOOIDI Tfl4 « C A N A IO Electro Photodiode C30843 Optics C30844, C30845, C30846 DATA SHEET Quadrant N-Type Silicon p-i-n Photodetectors • Broad Range of Photosensitive Suface Areas — 5 mm2 to 100 mm2 ■ Low Operating \foltage —

tic 1060

Abstract: rca 923 C30895 5252 F led rca 514 5252 F 5252 S RCA 411
Contextual Info: E G & G/CANADA/OPTOELEK BDBDbl D O O O O i n ID <123 H C A N A T-W-Si Photodiode R G i l Optics C30895 D A TA S H E ET Silicon Avalanche Photodiode Optim ized fo r High Responsivity and V e ry Lo w Noise at 1060 Nanom eters • Noise Equivalent Power NEP a t 1060 nm — 7.5 x 1 0 14 W/Hz1/2 max.

Contextual Info: 3x8.4mm Fast-Acting, Ceramic Tube Fuses C308F Series Dimensions - mm Drawing Not to Scale Description • • • • • Fast-acting, high breaking capacity of 4000 amps 3x8.4mm physical size Ceramic tube, silver-plated brass endcap construction RoHS compliant

133/ATMEL 230 24C04

Contextual Info: A R253 10K C308 10uF/6.3V 10K 5 DD30 BAV99 R259 +3.3VD R335 10K +3.3VD HD-VSW0 1 B COVER1 1 2 3 4 5 COVER1 47n 47n 47R C57 47R C58 3906 Q41 1 7 RGB0_RIN- RGB0_GIN- R252 47K C331 R249 C307 1n 100R Jupiter-RST 10uF/6.3V RESET ON_PANEL HOTPLUG 47n R126 R124 RGB0_BIN-

m3x8

Abstract: G6620400201 MC308 G6135013070 400LFM C091 G6620090204 SZ56 G6610120402 75A13
Contextual Info: HEAT SINKS FULL BRICK HEATSINK Horizontal Fins P/N: G6620090204 Model No. :M-B012 H E AT SI N K All Dimensions In mm HALF BRICK CASE HEATSINK All Dimensions In mm Vertical Fins P/N: G6620400201 Model No. :M-C308 Horizontal Fins P/N: G6610120402 Model No. :M-C091

Contextual Info: C3082L REV A Product Description CEP7 0.83:1 ADSL DMT CO Line Transformer Meets requirements of IEC60950 for basic insulation, 250V working voltage Customer Terminal #1 Indicator EIA date code and lot code A COEV C3082L XXXXX [9.91 MAX] 0.390 MAX Coplanar with surface

quadrant photodiode CD

Abstract: C30843 quadrant photodiode rca RCA H 410 quadrant detector large area quadrant photodiode RCA H 940 LM 8105 C30845 740417
Contextual Info: C I A INC/ t ELECTRO C I 7M 84b7S 000010=1 b Photodiode C30843 G30844, C30845, C30846 DATASHEET ID E OPTICS J I Quadrant 5 • Silicon p-i-n Photodetectors ■ B road R ange of P hotosensitive S uface A reas — 5 mm* to 100 m m 2 ■ Low O perating Voltage—VR - . 4 5 V

photodioda

Abstract: N10-13 laser rca rca 210 C30895
Contextual Info: 1GE D • I 74fi4b75 D D O D i n A INC/ ELECTRO OPTICS VICil H I Photodiode C30895 DATASHEET Silicon Avalanche Photodiode Optimized for High Responsivity and Very Low Noise at 1060 Nanometers ■ Noise Equivalent Pow er NEP a t 1060 n m — 7.5 x 1 0 14 W /Hz1'2 max.

Contextual Info: E G & G/CANADA/OPTOELEK ID î • 3ü30blü G O O O i n ItC ilElectro 123 M C A N A T-W S i Photodiode C30895 DATA SHEET Optics Silicon Avalanche Photodiode Optimized for High Responsivity and Very Low Noise at 1060 Nanometers ■ Noise Equivalent Power NEP at 1060 nm — 7.5 x 1 0 14 W/Hz1/2 max.

MC091

Contextual Info: HEAT SINKS FULL BRICK HEATSINK Horizontal Fins P/N: G6620090204 Model No. :M-B012 HEAT SIN K All Dimensions In mm HALF BRICK CASE HEATSINK All Dimensions In mm Vertical Fins P/N: G6620400201 Model No. :M-C308 Horizontal Fins P/N: G6610120402 Model No. :M-C091

thermal fuses color coding

Contextual Info: 3x8.4mm Fast-Acting, Ceramic Tube Fuses for Barrier Applications C308F Series Dimensions - mm Drawing Not to Scale Recommended Pad Layout Description A compact 3x8.4mm size provides a space-saving alternative to conventional fuse solutions with high interrupting rating for primary and secondary circuit

RCA c30808

Abstract: TAG60 3G30 L568 C30822 photodiode C30807 C30809 C30810 d28j 35XL
Contextual Info: E G & G/CANADA/OPTOELEK 3G30blQ ID □□□□!□! 7T3 ICANA Photodiode I t C J C30807, C30808, C30809 C30810, C30822, C30831 Optics E le c ,r o l DATA SHEET ' V f'S T 3 N-Type Silicon p-i-n Photodetectors Broad Range of Photo­ sensitive Surface Areas 0.2 mm2 to 100 mm2

C30807

Abstract: C30810 C30822 C30822 photodiode C3081 k2645 C30808 C30809 C30831 C30839
Contextual Info: N-Type Silicon PIN Photodetectors C30807, C30808, C30809, C30810, C30822, C30831 EVERYTHING IN A NEW LIGHT. Description Features This family of N-type silicon p-i-n • Broad Range of Photosensitive Surface Areas 0.2 mm2 to 100 mm2 photodiodes is designed for use in a wide

Contextual Info: E G & G/CANADA/OPTOELEK I t C i l • IO Optics 303DtilD DDOOlQ'ì TÔH « C A N A “p - Y / - * ' 3 Photodiode C30843 C30844, C30845, C30846 DATA S H EET Quadrant N-Type Silicon p-i-n Photodetectors ■ Broad Range of Photosensitive Suface Areas — 5 mm2 to 100 mm2

Contextual Info: itesi E G & G/ CANADA/ OPTOELEK IO D • 3G3DblO OGGG11S Electro Optics 266 «CANA Photodiode C30872 DATA SHEET Large Area Silicon Avalanche Photodiode for General-Purpose Applications IHigh Quantum Efficiency — 85% typical at 900 nm 18% typical at 1060 nm

C30817

Abstract: RCA C30817 LXA 102 103 PTS 400 C3081 QQG0107 921S-4
Contextual Info: E 6 & 6/CANADA/OPTOELEK 10 » yy- r 3D30fc>10 ÜÜ001D5 33^ B K A N A WM flTB ÆM Electro Photodiode C30817 DATA SHEET • mw#loptics Silicon Avalanche Photodiode for General-Purpose Applications ■ High Quantum Efficiency — 85% typical at 900 nm — 18% typical at 1060 nm

C30817E

Abstract: datasheet apd 1550
Contextual Info: PerkinElmer’s C30659 Series includes a Silicon or InGaAs Avalanche Photodiode with a hybrid preamplifier. It is supplied in a single modified 12-lead TO-8 package. The avalanche photodiodes used in these devices are the C30817EH, C30902EH, C30954EH, C30956EH,

ca3290

Abstract: CA3290A CA3290AE bipolar zener diodes 1N914 2N2102 C30809 CA3290E
Contextual Info: CA3290, CA3290A Data Sheet September 1998 BiMOS Dual Voltage Comparators with MOSFET Input, Bipolar Output • MOSFET Input Stage - Very High Input Impedance ZIN . . . . . . . . 1.7TΩ (Typ) - Very Low Input Current at V+ = 5V . . . . . . . 3.5pA (Typ)