C3074 Search Results

Contextual Info: Overview Features and Benefits PerkinElmer’s C30741 series of N-type silicon p-i-n photodiodes provide fast response and high quantum efficiency in the spectral range of 400 to 1100 nm. The wavelength of maximum sensitivity is @ 800 nm. As different applications have different

C30741PH-15S

Contextual Info: High-Speed Silicon PIN Photodiodes C30741Series Overview Features and Benefits Excelitas’ C30741 series of N-type silicon p-i-n photodiodes provide fast response and high quantum efficiency in the spectral range of 400 to 1100 nm. The wavelength of maximum sensitivity is

c3074

Abstract: 2SC3074 C3074 y 2SA1244
Contextual Info: C3074 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ C3074 ○ 大電力スイッチング用 • 単位: mm コレクタ飽和電圧が低い。: VCE (sat) = 0.4 V (最大) (IC = 3 A) • スイッチング時間が速い。: tstg = 1.0 s (標準)

c3074

Abstract: Transistor c3074 Equivalent 2SC3074 2SA1244 2SC3074 C3074 y
Contextual Info: C3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3074 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) · High speed switching time: tstg = 1.0 µs (typ) · Complementary to 2SA1244

MAX8770

Abstract: ICS954310 motherboard samsung ba41 MDB41 PC87541 QUANTA C3229 C3198 PC87541 sil3512 quanta
Contextual Info: 1 2 3 4 5 CPU Yonah/Merom 478 PIN micro FC-PGA 1 RJ9 Block Diagram P3,4 14.318MHz FSB 667 MHz(166X4) A LVDS LCD A LVDS P7 CLOCK GEN DDRII 400/533/667 Calistoga DVI M56 UNBUFFERED DDRII SODIMM CRT P11 P2 P12 945GM/PM R/G/B ICS954310 R/G/B 1466 PIN (micro FCBGA)

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

L6284

Abstract: A1273 L6283 a1046 L6278 L6559 l6262 a1583e A1154 a1273* transistor
Contextual Info: RVCT 2.0 Build Tools - Errors and Warnings Release 1.0 – 27th August 2003 Introduction This document illustrates the errors and warning messages that are generated by the Build Tools of ARM RealView Compilation Tools 2.0 and later. If you are using ADS ADS 1.2, 1.1 or 1.0.1 or RVCT 1.2

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

C3074

Abstract: 2SC3074 C3074 y ta1028 2SA1244
Contextual Info: C3074 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ C3074 ○ 大電力スイッチング用 • 単位: mm コレクタ飽和電圧が低い。: VCE (sat) = 0.4 V (最大) (IC = 3 A) • スイッチング時間が速い。: tstg = 1.0 s (標準)

c3074

Abstract: Transistor c3074 2SC3074 C3074 y Equivalent 2SC3074 2SA1244
Contextual Info: C3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3074 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 µs (typ) • Complementary to 2SA1244

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

Contextual Info: C3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3074 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 µs (typ) • Complementary to 2SA1244

l6703

Abstract: asm 1442 L6916E SVC 561 14 L6232E A1659 a1718 a1694 C2068 STR 6765
Contextual Info: RVCT 3.0 SP1 Build Tools - Errors and Warnings Last updated March 2008 Introduction This document illustrates the errors and warning messages that are generated by the Build Tools of ARM RealView Compilation Tools 3.0, 3.0 Service Pack 1, and subsequent 3.0 patches. If you are using ADS

C3074

Abstract: 2SC3074 2SA1244
Contextual Info: C3074 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ C3074 ○ 大電力スイッチング用 • 単位: mm コレクタ飽和電圧が低い。: VCE (sat) = 0.4 V (最大) (IC = 3 A) • スイッチング時間が速い。: tstg = 1.0 s (標準)

Transistor c3074

Abstract: c3074 2SC3074 2SA124 2SA1244
Contextual Info: C3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3074 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 µs (typ) • Complementary to 2SA1244

c3074

Abstract: Equivalent 2SC3074 2SA1244 2SC3074
Contextual Info: C3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3074 High Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 s (typ) • Complementary to 2SA1244

A1273

Abstract: l6703 power transistor mrc 438 L6232E 2 607 335 254 a1273* transistor ARM10200 c2874 L6726 l6232
Contextual Info: RVCT 2.2 Build Tools - Errors and Warnings Release 2.0 – 19th September 2005 Introduction This document illustrates the errors and warning messages that are generated by the Build Tools of ARM RealView Compilation Tools 2.2 and later. If you are using ADS ADS 1.2, 1.1 or 1.0.1 or RVCT 1.2

C2335

Abstract: C2331 C2458 C2491 C2314E C2021E C2275 C2271 C2987 C2499
Contextual Info: ADS 1.2 Build Tools - Errors and Warnings Release 1.2 - 2nd September 2003 Introduction This document illustrates the errors and warning messages that are generated by the Build Tools of ARM Developer Suite ADS version 1.2 and the RealView Compilation Tools (RVCT) version 1.2. Many of

c3207

Abstract: C3331 c3206 C3374 C3478 C3507 c3355 C3502 Toshiba C3388 c3320
Contextual Info: CR-1 8 7 6 5 3 4 2 1 REVISIONS ZONE DESCRIPTION LTR DATE APPR. SONY PROPRIETARY INFORMATION F F SONY CONFIDENTIAL IRX-3130 E SCHEMATICS E TV TUNER BOARD ENX-31 TABLE OF CONTENTS BLOCK TITLE D PAGE REF.NO. DESCRIPTIONS 1 XXXX - XXXX INDEX THIS PAGE HISTORY

sil3512

Abstract: C3088 CMOS Camera G966-25 C3198 PC87541 ICS9lpr310 7336A 915GM c3197 VT6212
Contextual Info: 1 2 3 4 5 478 PIN micro FC-PGA 1 RJ6 Block Diagram CPU Yonah/Merom P3,4 14.318MHz FSB 667 MHz(166X4) A LVDS LCD A LVDS P7 CLOCK GEN DDRII 400/533/667 Calistoga DVI M56 UNBUFFERED DDRII SODIMM 945GM/PM R/G/B CRT P11 R/G/B 1466 PIN (micro FCBGA) 37.5mm x 37.5mm

GT45F122

Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

GT30J124

Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

InGaAs quadrant

Abstract: C30822E UV245BG UV-215BQ C30971 C30641EH-TC FFD-100 YAG-100A
Contextual Info: Photodiodes for High-Performance Applications PIN Photo- PIN Photodiodes InGaAs and Si PIN Diodes, Quadrant Detectors, UV-Enhanced diodes For Industrial Applications InGaAs and Si PIN Diodes – Quadrant Detectors – UV-Enhanced Applications • Telecom