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    2SA1244 Search Results

    2SA1244 Datasheets (30)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SA1244
    Toshiba Silicon PNP Transistor Original PDF 136.15KB 5
    2SA1244
    Toshiba PNP transistor Original PDF 300.3KB 5
    2SA1244
    Various Russian Datasheets Transistor Original PDF 84.39KB 8
    2SA1244
    Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF 42.33KB 1
    2SA1244
    Unknown The Transistor Manual (Japanese) 1993 Scan PDF 118.9KB 2
    2SA1244
    Unknown Transistor Substitution Data Book 1993 Scan PDF 39.35KB 1
    2SA1244
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 44.22KB 1
    2SA1244
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 121.78KB 1
    2SA1244
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 84.17KB 1
    2SA1244
    Unknown Japanese Transistor Cross References (2S) Scan PDF 38.61KB 1
    2SA1244
    Unknown Catalog Scans - Shortform Datasheet Scan PDF 49.05KB 1
    2SA1244
    Unknown Catalog Scans - Shortform Datasheet Scan PDF 33.9KB 1
    2SA1244
    Toshiba Silicon PNP transistor for high current switching applications Scan PDF 232.44KB 5
    2SA1244(2-7J1A)
    Toshiba 2SA1244 - TRANSISTOR 5000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-7J1A, 3 PIN, BIP General Purpose Small Signal Original PDF 165.61KB 5
    2SA1244O
    Toshiba 2SA1244 - TRANSISTOR 5000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, 2-7J1A, 3 PIN, BIP General Purpose Small Signal Original PDF 165.61KB 5
    2SA1244-O
    Toshiba 2SA1244 - TRANSISTOR 5000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, 2-7J1A, 3 PIN, BIP General Purpose Small Signal Original PDF 165.61KB 5
    2SA1244-O
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 84.17KB 1
    2SA1244O
    Toshiba Silicon PNP Epitaxial Type Transistor Scan PDF 136.35KB 4
    2SA1244-O(2-7B1A)
    Toshiba 2SA1244 - TRANSISTOR 5000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF 165.61KB 5
    2SA1244-O(2-7B2A)
    Toshiba 2SA1244 - TRANSISTOR 5000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF 165.61KB 5
    SF Impression Pixel

    2SA1244 Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components 2SA1244-Y(T6L1,NQ)

    - Tape and Reel (Alt: 2SA1244-Y(T6L1,NQ))
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2SA1244-Y(T6L1,NQ) Tape & Reel 2,000
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    Newark 2SA1244-Y(T6L1,NQ) Bulk 10
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    • 100 $0.44
    • 1000 $0.32
    • 10000 $0.31
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    TTI 2SA1244-Y(T6L1,NQ) Reel 2,000
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    Toshiba America Electronic Components 2SA1244-Y(Q)

    - Bulk (Alt: 2SA1244-Y(Q))
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2SA1244-Y(Q) Bulk 12 Weeks 200
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    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SA1244-Y(TE16R) 7,840
    • 1 $6.57
    • 10 $6.57
    • 100 $6.57
    • 1000 $3.29
    • 10000 $3.29
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    Toshiba America Electronic Components 2SA1244-Y

    5000MA, 50V, PNP, SI, SMALL SIGNAL TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SA1244-Y 9
    • 1 $1.08
    • 10 $0.90
    • 100 $0.90
    • 1000 $0.90
    • 10000 $0.90
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    2SA1244 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: T O S H IB A 2SA1244 Transistor Unit in mm Silicon PNP Epitaxial Type PCT Process * High Current Switching Applications s rJ- Features CM Ö •H • Low Collector Saturation Voltage " V ce (Sat) = -0.4 V (Max.) at lc = -3A • High Speed Switching Time


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    2sa12442sc3074 PDF

    2SA1244

    Contextual Info: 2SA1244 TO SHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1244 HIGH CURRENT SWITCHING APPLICATIONS • Low Collector Saturation Voltage : v CE(sat) = - 0 .4 V (Max.) at I q = - 3 A • High Speed Switching Time : tstg = 1.0 /¿s (Typ.)


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    2sa12442sc3074961001eaa2 PDF

    c3074

    Abstract: Transistor c3074 Equivalent 2SC3074 2SA1244 2SC3074 C3074 y
    Contextual Info: 2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3074 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) · High speed switching time: tstg = 1.0 µs (typ) · Complementary to 2SA1244


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    2sc30742sa1244c3074transistor c3074+2equivalent 2sc3074c3074 y PDF

    A1244

    Abstract: 2SA1244 2SC3074
    Contextual Info: 2SA1244 TO SH IBA 2 S A 1 244 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : v CE(sat) = -0 .4 V (Max.) at I q = - 3 A High Speed Switching Time : tstg = 1.0 /us (Typ.)


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    2sa12442sc3074a1244 PDF

    2SA1244

    Abstract: a1244 2SC3074 SA1244
    Contextual Info: 2SA1244 TOSHIBA 2 S A 1 244 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • Low Collector Saturation Voltage : v CE(sat) = -0 .4 V (Max.) at I q = - 3 A • High Speed Switching Time : tstg = 1.0 /us (Typ.)


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    2sa12442sc3074961001eaa1a1244+1sa1244 PDF

    a1244

    Abstract: Transistor a1244 2SA1244 2SC3074
    Contextual Info: 2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1244 High Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) · High speed switching time: tstg = 1.0 µs (typ.) · Complementary to 2SC3074


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    2sa12442sc3074a1244transistor a1244 PDF

    a1244

    Abstract: Transistor a1244 2SA1244 2SC3074
    Contextual Info: 2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1244 High Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 µs (typ.) •


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    2sa12442sc3074a1244transistor a1244 PDF

    2SA1244

    Abstract: 2SC3074
    Contextual Info: TOSHIBA 2SC3074 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3074 HIGH CURRENT SWITCHING APPLICATIONS. • Low Collector Saturation Voltage : VCE (sat) = °-4V (Max.) (at Ie = 3A) High Speed Switching Time : ts^g^l.O/^s (Typ.) Complementary to 2SA1244


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    2sc30742sa124495max PDF

    2SA1244

    Abstract: A1244 2SC3074
    Contextual Info: 2SA1244 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1244 ○ 大電流スイッチング用 • 単位: mm コレクタ飽和電圧が低い。 : VCE (sat) = −0.4 V (最大) (IC = −3 A) • スイッチング時間が速い。 : tstg = 1.0 s (標準)


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    2sa12442sc3074a1244 PDF

    c3074

    Abstract: Transistor c3074 2SC3074 C3074 y Equivalent 2SC3074 2SA1244
    Contextual Info: 2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3074 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 µs (typ) • Complementary to 2SA1244


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    2sc30742sa1244c3074transistor c3074+2c3074 yequivalent 2sc3074 PDF

    Contextual Info: TOSHIBA TRANSISTOR 2SC3074 SILICON NPN EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS. Unit in mm FEATURES: . Low Collector Saturation Voltage : VcE(sat)=0.4V(Max.) a (at Ic=3A) . High Speed Switching Time : tstg=l-0^s(Typ.) . Complementary to 2SA1244


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    2sc30742sa1244collector80 PDF

    Contextual Info: 2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3074 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 µs (typ) • Complementary to 2SA1244


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    2sc30742sa1244 PDF

    A1244

    Abstract: 2SA1244 2SC3074
    Contextual Info: 2SA1244 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1244 ○ 大電流スイッチング用 • 単位: mm コレクタ飽和電圧が低い。 : VCE (sat) = −0.4 V (最大) (IC = −3 A) • スイッチング時間が速い。 : tstg = 1.0 s (標準)


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    2sa12442sc307420070701-jaa1244 PDF

    A1244

    Abstract: 2SA1244 2SC3074
    Contextual Info: 2SA1244 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1244 ○ 大電流スイッチング用 • 単位: mm コレクタ飽和電圧が低い。 : VCE (sat) = −0.4 V (最大) (IC = −3 A) • スイッチング時間が速い。 : tstg = 1.0 s (標準)


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    2sa12442sc3074a1244 PDF

    Transistor c3074

    Abstract: c3074 2SC3074 2SA124 2SA1244
    Contextual Info: 2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3074 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 µs (typ) • Complementary to 2SA1244


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    2sc30742sa1244transistor c3074c3074+12sa124 PDF

    2SA1244

    Abstract: A1244 2SC3074
    Contextual Info: 2SA1244 TOSHIBA 2 S A 1 244 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • Low Collector Saturation Voltage : v CE(sat) = -0 .4 V (Max.) at I q = - 3 A • High Speed Switching Time : tstg = 1.0 /us (Typ.)


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    2sa12442sc3074961001eaa2a1244 PDF

    Contextual Info: 2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1244 High Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 s (typ.) • Complementary to 2SC3074


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    2sa12442sc3074 PDF

    Contextual Info: 2SA1244 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V)400m @I(C) (A) (Test Condition)3.0


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    2sa1244freq60m PDF

    Contextual Info: 2SA1244Y Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V)0.4 @I(C) (A) (Test Condition)3


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    2sa1244yfreq60m PDF

    Contextual Info: SILICON NPN EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SW ITCHING APPLICATIONS. • • • Low Collector Saturation Voltage : v CE(sat) = °-4V (Max.) (at Ic = 3A) High Speed Switching Time : tgtg= 1.0/^s (Typ.) Complementary to 2SA1244 M A X IM U M RATINGS (Ta = 25°C)


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    2sa12442sc3074 PDF

    c3074

    Abstract: Equivalent 2SC3074 2SA1244 2SC3074
    Contextual Info: 2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3074 High Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 s (typ) • Complementary to 2SA1244


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    2sc30742sa1244c3074equivalent 2sc3074 PDF

    Contextual Info: 2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1244 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 µs (typ.) •


    Original
    2sa12442sc3074 PDF

    Transistor a1244

    Abstract: a1244 2SA1244 2SC3074
    Contextual Info: 2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1244 High Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 s (typ.) •


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    2sa12442sc3074transistor a1244a1244 PDF

    2SA1244

    Contextual Info: SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1244 HIGH CURRENT SWITCHING APPLICATIONS. • U n it in mm Low Collector S aturation Voltage : v C E(sat)= -0 .4 V (M a x .)a t I c = - 3 A • High Speed Sw itching Time : ts(,g = 1.0^s(Typ.) • Complementary to 2SC3074


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    2sa12442sc3074 PDF