C128 TRANSISTOR Search Results

transistor C128

Abstract: c128 transistor 28c128 C1-28Z transistor c1-28 GHZ TECHNOLOGY C1-28 55FT
Contextual Info: C1-28/C1-28Z 1 Watts - 28 Volts, Class C Defcom 400 MHz GENERAL DESCRIPTION CASE OUTLINE The C1-28 / Z is a COMMON EMITTER transistor capable of providing1 Watts of Class AB or C, RF output power in the band 100 - 400 MHz. This transistor is designed for Class AB or C amplifier applications. It utilizes

transistor c128

Abstract: c128 transistor ASI10791 C1-28 28c128
Contextual Info: C1-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The C1-28 is Designed for 28 Volt Class C Amplifier Applications up to 500 MHz. PACKAGE STYLE .280 4L PILL A FEATURES: E • PG = 12 dB Typ. at 1.0 W/400 MHz • η C = 65 % Typ. at 1.0 W/400 MHz • Omnigold Metalization System

transistor c128

Abstract: 55FT
Contextual Info: C1-28/C1-28Z _ 1Watts "28 Volts’ Class C GHz TECHNOLOGY DsfCO Ill 400 IV lH Z »f-M IC »O W A V e SILICO N >OWE> « A H S IS T O H Î GENERAL DESCRIPTION CASE OUTLINE The Cl-28 / Z is a COMMON EMITTER transistor capable of providingl Watts of Class AB or C, RF output power in the band 100 - 400 MHz. This

acrian RF POWER TRANSISTOR

Abstract: acrian RF POWER TRANSISTOR 300 w transistor c128 C1-28-2 CM25-28 transistor d 571 CM10-28 Acrian transistor c1-28 acrian inc
Contextual Info: ACRIAN INC T7 D E § 0 1 f l 2 □□ □ U h ? 7 p C GENERAL DESCRIPTION The C1-28 is a UHF power transistor designed to produce 1 watt of RF power when operated from a 28V power supply and used below 500MHz. The C1 -28 is also available in a stud package as part No. C1-28Z.

transistor c128

Abstract: c128 transistor c128 transistor datasheet TRANSISTOR 1003 STC128M KST-1003-000 C128
Contextual Info: STC128M Semiconductor NPN Silicon Transistor Features • • • • • Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability

transistor C128

Abstract: c128 transistor transistor package TO-92M C128 STC128M
Contextual Info: STC128M NPN Silicon Transistor Features Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability Low on resistance : RON=0.6Ω Max. (IB=1mA)

transistor c128

Abstract: c128 transistor
Contextual Info: STC128M Semiconductor NPN Silicon Transistor Features • • • • • Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability

transistor c128

Contextual Info: STC128M NPN Silicon Transistor Features Low sat urat ion m edium current applicat ion Ext rem ely low collect or sat urat ion volt age Suit able for low volt age large current drivers High DC current gain and large current capabilit y Low on resist ance : RON= 0.6Ω Max. ( I B= 1m A)

Contextual Info: mikromedia+ for PIC32MX7 Amazingly compact, all-on-single-pcb development board carring 4.3’’ TFT Touch Screen and lots of multimedia peripherals, all driven by powerful PIC32MX795F512L microcontroller. TO OUR VALUED CUSTOMERS I want to express my thanks to you for being interested in our products and for having

TS PQ4 24

Abstract: TM4C129LNCZAD
Contextual Info: mikromedia 5 for Tiva Amazingly compact, all-on-a-single-pcb development board that carries 5’’ TFT Touch Screen and lots of multimedia peripherals, all driven by a powerful TM4C129L X NCZAD TO OUR VALUED CUSTOMERS I want to express my thanks to you for being interested in our products and for having

C134 transistor

Contextual Info: mikromedia+ for Stellaris ARM® Amazingly compact, all-on-single-pcb development board carring 4.3’’ TFT Touch Screen and lots of multimedia peripherals, all driven by powerful LM4F232H5QD microcontroller from ARM® Cortex -M4 family TO OUR VALUED CUSTOMERS

D773

Abstract: P369 diode sg 46 diode sg 69 P469 SGSP368 SGSP3B8/P369 SP369 SGSP469 sgsp468
Contextual Info: S G S -T H O M S O N SGSP368/P369 D7E D § T T ST H B ? 73C 17403 D 0D 17TQ ti û | “ SGSP468/P469 SGSP568/P569 : N_CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field

IRGPC50FD2

Contextual Info: PD - 9.800 International li«] Rectifier IRGPC50FD2 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE _ Features • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to

Ampire 128 x 64

Abstract: Ampire 128 64 Ampire 128 Ampire LCD LCD 128x128 128x128 LCD db3 c113 Ampire 128 SPECIFICATIONS MODULE CUSTOMER CUSTOMER PART transistor c128 AF128128K 128x128 LCD 1.5 128x128 Color LCD Ampire Ampire LCD
Contextual Info: A MP I R E SPECIFICATIONS FOR LCD MODULE CUSTOMER CUSTOMER PART NO. AMPIRE PART NO. AF-128128KFIQY APPROVED BY DATE APPROVED BY Date : 2002/11/4 CHECKED BY AMPIRE CO., LTD. ORGANIZED BY 1 RECORD OF REVISION Revision Date 2002/11/4 Date : 2002/11/4 Contents

db3 c113

Abstract: Ampire 128 x 64 transistor c128 Ampire 128 128x128 LCD Ampire 128 64 1.5 128x128 Color LCD Ampire LCD HD66750S 1.5 128x128 Color LCD 27
Contextual Info: A MP I R E SPECIFICATIONS FOR LCD MODULE CUSTOMER CUSTOMER PART NO. AMPIRE PART NO. AT-128128H1FI-00H APPROVED BY DATE † Approved For Specifications † Approved For Specifications & Sample APPROVED BY Date : 2003/2/21 CHECKED BY AMPIRE CO., LTD. ORGANIZED BY

SWITCHING TRANSISTOR C134

Abstract: IC104 15l104 NTC cebi crystal oscillator KDS s104 diode sma TRANSISTOR c104 AN2772 MBC13900 MC13192DS
Contextual Info: MC13192 Evaluation Board Reference Manual Document Number: MC13192EVBRM Rev. 1.2 09/2006 How to Reach Us: Home Page: www.freescale.com E-mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370

IC-106

Abstract: IC104 TRANSISTOR c104 MBC13900 MC13192 MC9S08GT60 interfacing rs232 to zigbee IC106
Contextual Info: MC13192 Evaluation Board Reference Manual MC13192EVBRM/D Rev. 1.0, 09/2004 How to Reach Us: USA/Europe/Locations Not Listed: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 Japan: Freescale Semiconductor Japan Ltd.

1RFD123

Abstract: 1RFD120
Contextual Info: HE D I MÖ55455 • 0000374 □ I ■ T-35-25 INTERNATIONAL R E C T I F I E R Data Sheet No. PD-9.385E _ INTERNATIONAL RECTIFIER HEXFET' TRANSISTORS II«R I IRFD1 SO IRFD1 S3 N-CHANNEL HEXDIP” 1-WATT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PACKAGE

transistor c118

Abstract: C124 transistor transisTOR C123 transistor c114 diagram for C114 transistor transistor c114 transistor c117 587-1352-1-ND PM820 transistor C124
Contextual Info: PTMA080304M Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use in cellular amplifier applications in the 700 to 1000 MHz frequency

transistor c114

Abstract: c102 TRANSISTOR TRANSISTOR c105 transistor c114 chip c104 TRANSISTOR C114 transistor c107 TRANSISTOR c106 TRANSISTOR TRANSISTOR C107 c101 TRANSISTOR
Contextual Info: Intel740 Graphics Accelerator Reference Card BOM 3/30/98 QTY 5 3 6 48 Component Type Diode Pack Diode Pack Capacitor Capacitor Value N/A N/A 1UF .1UF Manufacturer Motorola Motorola TDK KEMET Part Number BAV99LT1 BAV99LT1 C3216X7R1C105KT000N C0805C104K5RAC

IRGPC50FD2

Contextual Info: PD - 9.800 IRGPC50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to

transistor c114

Contextual Info: PTMA080304M Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use in cellular amplifier applications in the 700 to 1000 MHz frequency

600V 25A Ultrafast Diode

Abstract: IRGPC50FD2 IRGPC50FD 600v 20a IGBT transistor c128 current rating igbt 600v 20a
Contextual Info: PD - 9.800 IRGPC50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to

TL306

Abstract: TL184 TL167 TL307
Contextual Info: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use