BV 53 Search Results

Contextual Info: CIC-40TS-40D-B6-YAM-S REV 2 40-Lead TSOP to a 40-Pin DIP 7/97 (EXAMPLES) TSOP DEVICES: PIN CONFIGURATION: BASE 40-Pin DIP E28F002BC / BL / BV / BX E28F004BE / BL / BV / BX E28F008BE / BV (TE extended temp range) SOCKET: Yamaichi IC191-0402-002N PRICING:

C495 transistor

Abstract: transistor c495 C735 c495 bc300 equivalent NPN C460 BFY50 equivalent u c756 2n-2411 2n1613 equivalent
Contextual Info: 7 Metal Can High Current NPN Am plifiers Case Outlines Maximum ratinas Device Type ¡5 o £L BV Case BV BV hFEI CBO CEO EBO ICM mA V V V hFE2 1C Ic mA min. max. mA BFT39 BFT40 BFT41 NPN NPN NPN T039 T039 T039 90 70 60 80 60 50 5 5 5 1000 1000 1000 100 50 100 75

TO-202 transistor NPN

Abstract: ECG312 ECG311 ECG299 ECG312 transistor ecg32
Contextual Info: PHILIPS E C G INC 17E D Transistors cont'd EGG Type Description and Application • (=1=53=120 0005033 ê ■ (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts Collector To Emitter Volts Base to Emitter Volts BV q b o BV c e o

C736

Abstract: C495 transistor bc303 equivalent 2N2222A 026 C735 bc143 equivalent bc143 C644 equivalent transistor 2N1711 transistor c633
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

2N4252

Abstract: 2N3570 2N3571 pnp hfe 70 BFT69 2N3572 048J 2N3571 NPN bc143 2N918
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *T t i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

2N290

Abstract: bc143 2N3570 2N3571 2N3572 2N4252 2N4253 2N918 BFT79 T018
Contextual Info: Metal Can Device Type 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0-48 0 2N3570 2N3571 2N3572 *T t i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T 072 T 072 T 072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200

BF178

Abstract: bf179 BFT79 BF177 2N2219 2N2905 bf338 BFQ36 BC325 2N3571 2N3572
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

F13S

Abstract: BFQ35 BC177 pnp transistor transistor bc303 transistor t05 BF179 2n3440 equivalent bc304 equivalent bc143 equivalent 2N3570
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

C495 transistor

Abstract: c735 2N1893 equivalent c644 C735 O 2N2222 hfe C749 2N3570 transistor C633 NPN C460
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *T t i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

P6KE10C

Abstract: P6KE12A P6KE22 P6KE10 P6KE10A P6KE10CA P6KE11 P6KE11A P6KE11C P6KE11CA
Contextual Info: Max. Clamping Voltage @ lpp Max. Peak Pulse Current Max. Voltage Temp. Variation Of Bv Type Number Reverse Standoff Voltage UNI (Bl) VR (V) Min (V) Max (V) It (mA) IR (uA) Ve (V) Ipp (A) Breakdown Voltage BV Volts @ lt O Type Number O Max. Reverse Leakage

5-Volt Data Bus

Abstract: 8096 microcontroller temperature control of 8096 3volt inverter 74HC00 74HC00 CMOS 1N4370A 74HC 5V 74HC00
Contextual Info: Interfacing Atmel LV/BV EPROMs on a Mixed 3-volt/5-volt Data Bus EPROM Introduction Interfacing Atmel Corporation’s low voltage LV/BV EPROMs on a common data bus with standard 5-volt devices can be achieved with relative ease if a few simple guidelines are followed. By

3N123

Abstract: TELEDYNE CRYSTALONICS 3N136 VE2B
Contextual Info: « LOW COST SILICON EPITAXIAL JUNCTION INTEGRATED CHOPPER TRANSISTOR GEOMETRY 450, PG. 59 E L E C T R IC A L D A T A ABSOÎ.UTE M AXIM U M RATING PARAMETER SYMBOL 3N123 UNITS Collector to Base Voltage BV cbo 30 V Emitter 1 to Base Voltage BV e ì BO 25 V

SSM4816SM

Contextual Info: SSM4816SM DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE Simple drive requirement MOSFET-1 BV DSS S1/D2 S1/D2 Suitable for DC-DC Converters R DS ON 22mΩ ID MOSFET-2 BV DSS R DS(ON) ID 6.7A 30V 13mΩ 11.5A S1/D2 D1 Fast switching performance SO-8 G2 S2/A S2/A

Bv 42 transistor datasheet

Abstract: email is 53 dynet BV 53
Contextual Info: Dynetics BV Dynetics BV; De Maas 17C; 5684PL Best; The Netherlands http://www.dynetics.nl Email: sales@dynetics.nl Tel: +31 499 371007 Fax: +31 499 372008 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38

Contextual Info: N85 W12545 Westbrook Crossing Menomonee Falls, WI 53051 800.307.6702 800.799.3779 fax marinco.com Mastervolt International BV Snijdersbergweg 93 1105 AN AMSTERDAM ZO The Netherlands +31 0 20 34 22 100 +31(0)20 69 71 006 fax 55 Paul Matthews Road Albany, Auckland 0632

diac 400V 10A

Contextual Info: VK05CFL  ELECTRONIC DRIVER FOR CFL APPLICATION TYPE VK05CFL BV 520 V ICrms 0.25A IPeak 1.5A EMITTER SWITCH POWER OUTPUT STAGE INTEGRATED ANTIPARALLEL COLLECTOR SOURCE DIODE • INTEGRATED DIAC FUNCTION ■ NOMINAL WORKING FREQUENCY SETTABLE BY EXTERNAL CAPACITOR

Contextual Info: S F W /I9 53 0 Advanced Power MOSFET FEATURES BV DSS = -100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n - ■ Lower Input Capacitance In = -10.5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature

diac 30v

Abstract: diac 400V 15w cfl pin diagram of diac DIAC in cfl diac BIPOLAR cfl lamp 15w 23w cfl circuit 400v diac DIAC EQUIVALENT circuit
Contextual Info: VK05CFL  ELECTRONIC DRIVER FOR CFL APPLICATION TYPE VK05CFL BV 520 V ICrms 0.25A IPeak 1.5A EMITTER SWITCH POWER OUTPUT STAGE INTEGRATED ANTIPARALLEL COLLECTOR SOURCE DIODE • INTEGRATED DIAC FUNCTION ■ NOMINAL WORKING FREQUENCY SETTABLE BY EXTERNAL CAPACITOR

ECG Cross Reference

Abstract: transistor ECG128 Philips ECG 152 ECG159 transistor ECG159 ECG2355 NPN pnp MATCHED PAIRS ECG289A ECG184 cross reference ECG157
Contextual Info: PHILIPS E C G INC 54E D Transistors cont'd ECG Type Description and Application • ^53^20 00071b2 OBT « E C G (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts Collector To Emitter Volts Base to Emitter Volts BVc b o BV c e O

t0218

Abstract: 200 watts audio amp power transistors NTE377 NTE374 NTE373 NTE374 NTE382 NTE392 45W AMP NTE373 25w audio
Contextual Info: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) typical <T Case Style Diag. No. Maximum Collector Current (Amps) BVCeo BV ebo Ufe Pd

1n6415

Abstract: 1N6408 VOLTAGE SUPPRESSOR marking BV
Contextual Info: DIGITRON SEMICONDUCTORS 1N6402-1N6456A 600W TRANSIENT VOLTAGE SUPPRESSOR UNIDIRECTIONAL MAXIMUM RATINGS Parameter Value Peak power dissipation @ 25°C 600W Less than 1 X 10-12 seconds Tclamping volts to BV min Operating and storage temperature range -55 to +175°C

Contextual Info: IL766B Bidirectional Input Optocoupler FEATURES • Very High Current Transfer Ratio IL766B -1: 400% at / F=1.0 mA, FCE=5.0 V IL766B-2: 900% at / F=0.5 mA, F CE=5.0 V Internal RBE for Better Stability BV qeo >60 V Isolation Test Voltage, 5300 VRMS D im ensions in inches mm

AJ05A

Abstract: Aj36 AJ06A aj48 AJ08 AJ11A AJ13A TVS SMAJ6.0 AJ-07 AJ06
Contextual Info: SMAJ SERIES VOLTAGE 5.0V ~ 170V 400W Peak Power Surface Mount TVS Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES Dimensions in * Low profile package * Fast response time: Typically less than 1.0ps from 0 volt to BV min.

Contextual Info: ATF16V8B Features • Industry Standard Architecture Emulates Many 20-Pin PALs Low Cost Easy-to-Use Software Tools High Speed Electrically Erasable Programmable Logic Devices 7.5 ns Maximum Pln-to-Pin Delay Several Power Saving Options • • Device Icc, Stand-Bv