BUZ71 APPLICATION Search Results

BUZ71 application

Abstract: TT220 BUZ71 BUZ71FI
Contextual Info: BUZ71 BUZ71FI Æ 7 SGS-THOMSON ^ 7 # [ÜD^OEllLIgTrKOliOigi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^O S on BUZ71 BUZ71 FI 50 V 50 V 0.1 n 0.1 Si 'o ' 14 A 12 A • VERY FAST SWITCHING • LOW DRIVE ENERGY FOR EASY DRIVE, REDUCED SIZE AND COST

Contextual Info: BUZ71 N - CHANNEL 50V - 0.085ft - 14A -TO-220 STripFET POWER MOSFET TYPE BUZ71 V dss 50 V R d Id S o ii < 0.1 Q. 14 A . • TYPICAL RDS(on) = 0.085 AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . HIGH CURRENT CAPABILITY . 175°C OPERATING TEMPERATURE

BUZ71

Abstract: BUZ71 ST
Contextual Info: BUZ71 N - CHANNEL 50V - 0.085Ω - 17A TO-220 STripFET POWER MOSFET TYPE BUZ71 • ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.1 Ω 17 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE

BUZ71

Abstract: BUZ71 dc to ac
Contextual Info: BUZ71 N - CHANNEL 50V - 0.085Ω - 17A TO-220 STripFET POWER MOSFET TYPE BUZ71 • ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.1 Ω 17 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE

BUZ71

Abstract: BUZ71 application BUZ71 dc to ac
Contextual Info: BUZ71  N - CHANNEL 50V - 0.085Ω - 17A TO-220 STripFET POWER MOSFET T YPE BUZ71 • ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.1 Ω 17 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE

BUZ71

Abstract: stmicroelectronics datecode BUZ71 ST
Contextual Info: BUZ71  N - CHANNEL 50V - 0.085Ω - 14A -TO-220 STripFET POWER MOSFET T YPE BUZ71 • ■ ■ ■ ■ V DSS R DS o n ID 50 V < 0.1 Ω 14 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE

BUZ71

Abstract: BUZ71FI
Contextual Info: BUZ71 BUZ71FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ71 BUZ71FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.1 Ω < 0.1 Ω 18 A 12 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

BUZ71

Abstract: Morocco buz71fi BUZ71FI
Contextual Info: BUZ71 BUZ71FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ71 BUZ71FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.1 Ω < 0.1 Ω 18 A 12 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

schematic diagram dc-ac welding inverter

Abstract: schematic diagram dc-ac welding inverter CIRCUIT schematic diagram UPS schematic diagram welding inverter schematic diagram dc-ac inverter schematic diagram welding inverter control schematic diagram UPS 600 Power free high current smps circuit diagram BUZ71 application inverter irf840
Contextual Info: BUZ71 BUZ71FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ71 BUZ71FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.1 Ω < 0.1 Ω 18 A 12 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

BUZ71

Abstract: BUZ71FI iso vg 46
Contextual Info: BUZ71 BUZ71FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ71 BUZ71FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.1 Ω < 0.1 Ω 18 A 12 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

TT220

Abstract: transistor t220 BUZ71 dc to ac TT 220
Contextual Info: {ZT SGS-THOMSON BUZ71 ^ 7 # ,. M g[M>g[L[I(g¥[Mg [M(gi_ BUZ71FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS(on) ^d " BUZ71 BUZ71FI 50 V 50 V 0.1 Q 0.1 0 14 A 12 A • VERY FAST SW ITCHING • LOW DRIVE ENE R G Y FOR EASY DRIVE,

Contextual Info: BUZ71A Data Sheet 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET June 1999 File Number 2419.2 Features • 13A, 50V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.120Ω (BUZ71 field effect transistor designed for applications such as

irf540 mosfet control motor

Abstract: std29nf03l ignition switch on coil smart igbt gear box motor 12v 12v dc motor igbt control VBG15NB37 STP12PF06 morocco smart ignition igbt rain SENSOR STP60NE06-16
Contextual Info: November ’99 TO-220 Device STP12PF06 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP60NF03L STP3015L STP40NE03L-20 STP40NF03L STP3020L STP30NE03L STP22NE03L STP55NF03L STP80NS04Z STP60NS04Z IRFZ40 BUZ11 BUZ11A BUZ10 BUZ71 STP80NF55-06 STP80NF55L-06

BUZ71 application

Contextual Info: BUZ71 Data Sheet [ /Title BUZ7 1 /Subject (14A, 50V, 0.100 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET Features

VBG15NB37

Abstract: STP3020L IRF540 application STP24NF10 BUZ10 STGP10NB60S stp80* equivalent smart ignition igbt VBG15NB37 BUZ11 STD38NF03L
Contextual Info: November ’99 TO-220 Device STP12PF06 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP60NF03L STP3015L STP40NE03L-20 STP40NF03L STP3020L STP30NE03L STP22NE03L STP55NF03L STP80NS04Z STP60NS04Z IRFZ40 BUZ11 BUZ11A BUZ10 BUZ71 STP80NF55-06 STP80NF55L-06

BUZ71 application

Abstract: BUZ71 TB334
Contextual Info: BUZ71 Data Sheet December 2001 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET Features • 14A, 50V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,

BUZ71

Abstract: BUZ71A TB334 TO 220AB Mosfet TA9770 transistor buz71a
Contextual Info: BUZ71A Semiconductor Data Sheet 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET October 1998 File Number 2419.1 Features • 13A, 50V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.120Ω (BUZ71 field effect transistor designed for applications such as

BUZ71 application

Abstract: BUZ71 TB334
Contextual Info: BUZ71 Data Sheet June 1999 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching

transistor 647

Contextual Info: rZT SGS-THOMSON * 7M. [ÄliSimitgTßMOgS BUZ71 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIETHICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 9 5 x 9 5 mils Al A u /C r/N i/A u

BUZ71 dc to ac

Abstract: transistor buZ71 BUZ71 T0220AB buz71 philips IR 5331
Contextual Info: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor • t.t,S3T31 0014405 5 BUZ71 ^ May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , m otor control, welding,

transistor 647

Abstract: BUZ71 PVAPOX 647 transistor
Contextual Info: 30E J> • 7T2T2_37 DO 3D 1Sb 3 M ^ ^ O i - S G S -T H O M S O N s 6 - s-thomson = L[I(g¥GM0 S BUZ71 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE:

Contextual Info: BUZ71A N - CHANNEL 50V - 0.1Î2 - 13A -TO-220 STripFET POWER MOSFET TYPE BUZ71 A V R D S o n Id < 0.12 Q. 13 A dss 50 V . • TYPICAL RDS(on) =0.1 AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . HIGH CURRENT CAPABILITY . 175°C OPERATING TEMPERATURE

Contextual Info: i l S E M E L A B 37E D L T D 0133187 DDGGSbT 2 • SC 1LB T - 3 9 - 1 1 SEMELAB ul wü - ‘. i. O c^ i o Ci 7 1 : ^ S J tr BUZ71 MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm 10. 3 _ max. ¿.5mai 1.3 5.9 2.8 min. f ■t 15.8 APPLICATIONS

BUZ71

Abstract: diode din 4147
Contextual Info: BUZ71 {£} HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Package Features T O -2 2 0 A B TOP VIEW • 14A, 50V • rDS on = 0-1 n • SOA is Power-Dissipation Limited DRAIN (FLANGE) u • Nanosecond Switching Speeds • Linear Transfer Characteristics