BUS50 Search Results

EM- 546 motor

Contextual Info: MOTOROLA O rder this docum ent by BUS50/D SEMICONDUCTOR TECHNICAL DATA BUS50 S W IT C H M O D E S e rie s NPN S ilic o n P o w e r T ra n s is to rs The BUS50 transistor is designed for low voltage, high-speed, power switching in in d u ctive c ircu its w h e re fall tim e is critic a l. It is p a rtic u la rly su ite d fo r b a tte ry

transistor tl 187

Abstract: BUS50 MOTOROLA TRANSISTOR TRANSISTOR 023
Contextual Info: MOTOROLA Order this document by BUS50/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Series NPN Silicon Power Transistors The BUS50 transistor is designed for low voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for battery

2n3055 motorola

Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
Contextual Info: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,

BZW 05 33b

Abstract: 82C251 C161CS C161JC QFP-128 RTC-8563 Funkamateur BUS49 C161U
Contextual Info: phyCORE-161CS Hardware-Manual Für eventuell auftretende Fehler übernehmen wir keine Verantwortung. Bei Fragen oder Anregungen wenden Sie sich bitte an unseren support@phytec.de oder support @phytec.com. Ausgabe Juni 2001 Ein Produkt eines Unternehmens der PHYTEC Technologie Holding AG

m21036

Abstract: str 2105 plan str 2105 01C0-O23F BUS-61559 S-63930 BUS-63920 STANAG-3910 tag l9 225 400 stanag 3910
Contextual Info: 000 BUS-61559 SERIES IUC DATA DEVICE CORPORATION _ MIL-STD-1553B NOTICE 2 ADVANCED INTEGRATED MUX HYBRIDS with ENHANCED RT FEATURES AIM-HY’er DESCRIPTION DD C’s BUS-61559 series of Ad­ vanced Integrated Mux Hybrids with en­ hanced RT Features (A IM -H Y ’er)

Contextual Info: UNCONTROLLED DOCUMENT P/N PREFIX/SUFFIX TABLE LCM-X STANDARD HIGH TEMP. DXX DESCRIPTION SR STN, REFLECTIVE S H REV. A SF STN, TRANSFLECTIVE W/ BACKLIGHT TR TN, REFLECTIVE TF IN, TRANSFLECTIVECW/ BACKLIGHT) TYPE 84.00 C3.307] 2.50 [0.098] - 79.00 [3.110] -

backlight 16x2

Contextual Info: PART NUMBER REV. LCM-H01 6 0 2 D W F/ C -B A UNCONTROLLED DOCUMENT CHARACTER DETAIL 3 .5 5 [ 0 ,1 3 9 8 ] 2 ,9 6 [ 0 .1 1 6 5 ] 0.56 [0.0220] - REV. A E.C.N. NUMBER AND REVISION COMMENTS DATE 4.18.07 E.C.N. #11148. 0 .5 9 [0 .0 2 3 2 ] - - 0.04 [0.0016] - t

ST7920

Abstract: C175 GRAPHIC LCD MODULE
Contextual Info: UNCONTROLLED DOCUMENT PA R T N U M B E R REV. LCM-X1 9 2 3 2 G X X /C P/N PREFIX/SUFFIX TABE LCM—X DXX DESCRIPTION STANDARD 5 HIGH TEMP. H SR SIN, REFLECTIVE SF TR STN, TRANS FLECTI VE W/ BACKLIGHT TN, REFLECTIVE TF TN, TRANS FLECTIVE(W/ BACKLIGHT) TYPE

Contextual Info: PART N U M BER LCM — X 0 1 0 0 4 D X X UNCONTROLLED DOCUMENT REV. P/N PREFIX/SUFFIX TABLE LCM—X STANDARD S HIGH TEMP. H DXX DESCRIPTION SR STN, REFLECTIVE SF STN, TRANSFLECTIVE W/ BACKUGHT TR TN, REFLECTIVE F TN, TRANSFLECTIVE(W/ BACKLIGHT) REV. E .C .N .

10219b

Contextual Info: UNCONTROLLED DOCUMENT PART NU M BER REV. LCM — X01 6 0 2 D X X / G P/N PREFIX/SUFFIX TABLE LC M -X STANDARD DXX SR S HIGH TEMP. H REV. DESCRIPTION E.C.N. NU M BER AND REVISION COMMENTS DATE STN, REFLECTIVE SF STN, TRANSFLECTIVE W/ BACKLIGHT TR TN, REFLECTIVE

lcd 16x2 pin diagram

Abstract: lcd module 16x2
Contextual Info: UNCONTROLLED DOCUMENT CHARACTER DETAIL 3 .5 5 2 ,9 6 REV. A [0 ,1 3 9 8 ] [0 .1 1 6 5 ] 0.56 [0.0220] - 0.59 PA R T N U M B ER REV. LCM-H01 602DWF/CB2 A E.C.N . E.C.N . N U M B ER AND R EV ISIO N COMMENTS DATE 0 2.1 3.07 #11148. [0 .0 2 3 2 ] - - 0.04 [0.0016]

BUS11-JQR-B

Abstract: 400V 5A NPN 100W BUV19 PNP 8A 400V TO-3
Contextual Info: Search Results Part number search for devices beginning "BUS12" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BUS12 NPN TO3 400V 8A 15 - 5/1 - 125W BUS12A

BUS505

Abstract: BUS512 BUS515
Contextual Info: BUS Single-Output DC-DC Series Data Sheet 3 Watts Features • • • • • • • • Industry-standard DIP package Industry-standard pinout 85°C case operation Short-circuit protection 5V input Input LC filter Regulated output 500V isolation Dimensions: 1.25” 31.8mm x 0.80” (20.3mm) x 0.40” (10.2mm)

BU108

Abstract: 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 VOLTS 150 WATTS

transistor 3569

Abstract: t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD200 PNP MJD210 Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —

transistor MJ2501

Abstract: BU108 transistor 2sC2238 transistor sdt9201 BDX54 transistor 2SD425 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ413 MJ423 High-Voltage NPN Silicon Transistors 10 AMPERE POWER TRANSISTORS NPN SILICON 400 VOLTS 125 WATTS . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits. • High Voltage — VCEX = 400 Vdc

automotive ignition tip162

Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —

BU108

Abstract: TRANSISTOR REPLACEMENT GUIDE BD676 BD676A application note BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD676 BD676A BD678 BD678A BD680 BD680A BD682 Plastic Medium-Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 Min @ IC = 1.5 and 2.0 Adc

2SC1419

Abstract: TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability.

BD139 time

Abstract: ST BDW83C 2n5298 2SC495 BU108 2 N MJE3055 bd135 TRANSISTOR REPLACEMENT GUIDE 2N6022 transistor MJL21194 2SD382 L
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUH150  Data Sheet Designer's SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTOR 15 AMPERES 700 VOLTS 150 WATTS The BUH150 has an application specific state–of–art die designed for use in 150 Watts Halogen electronic transformers.

Motorola case 77

Abstract: 2N3055 BU108 2sc15 bdw93c applications BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE200* PNP MJE210* . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 25 Vdc (Min) @ IC = 10 mAdc

2SA1046

Abstract: BD419 2SC1943 BD4202 BD420 2SC2071 2SC1237 2SA939 BD133 2sc1903
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD438 BD440 BD442 Plastic Medium Power Silicon PNP Transistor . . . for amplifier and switching applications. Complementary types are BD437 and BD441. 4.0 AMPERES POWER TRANSISTORS PNP SILICON ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

2SC124

Abstract: 2n5195 motorola BU108 bd238 equivalent 2SA1046 tip3055 equivalent BU806 Complement BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5194 2N5195* Silicon PNP Power Transistors *Motorola Preferred Device . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 4 AMPERE POWER TRANSISTORS

BU108

Abstract: 2SA1046 BDX54 2SB56 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUH50  Data Sheet Designer's SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTOR 4 AMPERES 800 VOLTS 50 WATTS The BUH50 has an application specific state–of–art die designed for use in 50 Watts HALOGEN electronic transformers and switchmode applications.